Polysilicon floating gate memory based on organic field effect transistor and its preparation method

Abstract

The invention discloses a polysilicon floating gate memory based on an organic field effect transistor and a preparation method thereof. The gate electrode adopts a heavily doped low-resistance single crystal silicon substrate with a thickness of 100-300nm; the gate insulation formed on the surface of the gate electrode silicon substrate dielectric layer; a polysilicon floating gate embedded between the gate insulating dielectric layer and the tunneling insulating dielectric layer as a charge storage unit; a tunneling insulating dielectric layer formed on the surface of the floating gate; growing an organic semiconductor on the surface of the tunneling insulating dielectric layer material to form the active layer of the device; on the surface of the active layer, metal is vacuum-evaporated through a metal mask to form the source and drain of the device. The beneficial effect of the invention is to reduce the working voltage of the floating gate memory based on the organic field effect transistor, realize high-density storage of the device, improve the retention characteristic of the device, and reduce the manufacturing cost of the device.

Description

technical field [0001] The invention belongs to the technical field of electronic components, and relates to a polysilicon floating gate memory based on an organic field effect transistor and a preparation method thereof. Background technique [0002] With the continuous development of electronic information technology, electronic information products have gradually penetrated into every aspect of people's life, work and study. People's demand for low-cost, low-power, portable and miniaturized electronic devices is increasing. The traditional silicon-based It is difficult for non-volatile memory to meet the above new requirements. Organic floating gate memory is a new type of organic electronic device developed based on organic thin film field effect transistor. Attention is a new type of electronic device with very promising application prospects in the future. [0003] The structure of organic floating gate memory is similar to that of organic field effect transistors (OF...

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Problems solved by technology

[0005] The purpose of the present invention is to provide a polysilicon floating gate memory based on an organic field effect transistor and a preparation method thereof, so as to solve the problems of high operating voltage and high manufacturing cost of the existing organic field effect transistor floating gate memory

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