Ferromagnetic random access memory, writing method thereof, reading method thereof and preparation method thereof

A ferro-resistance variable memory technology, which is applied in the direction of electrical components, can solve the problems of low storage density, increase the resistance ratio of high and low resistance states, and increase the storage window of ferro-resistance variable memory, so as to increase the storage window and increase the The effect of on-off ratio

Active Publication Date: 2018-04-20
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention provides a ferro-resistance variable memory and its writing method, reading method and preparation method, which increase the resistance ratio of the high and low resistance states of the switch layer under the action of an electric field, increase the storage window of the ferro-resistance variable memory, and solve the problem of Solve the problem of small storage window and low storage density of ferro-resistive variable memory at the present stage

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  • Ferromagnetic random access memory, writing method thereof, reading method thereof and preparation method thereof
  • Ferromagnetic random access memory, writing method thereof, reading method thereof and preparation method thereof
  • Ferromagnetic random access memory, writing method thereof, reading method thereof and preparation method thereof

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Embodiment 1

[0043] Usually, the conventional ferro-RRAM directly injects electrons from the top electrode (for example, a metal material layer) to the ferroelectric layer. When the material of the bottom electrode is the same, the conductivity of the top electrode determines the degree of difficulty of electron injection, that is The resistance ratio (R OFF / R ON ). The current RRAM R OFF / R ON less than 10 3 , that is, the storage window is smaller.

[0044] Wherein, the resistance ratio of the high and low resistance states of the switch layer determines the size of the storage window of the FRAM; meanwhile, the size of the storage window of the FRAM directly determines the storage density of the FRAM. Specifically, the greater the resistance ratio of the high and low resistance states of the switch layer is, the larger the storage window of the ferro-resistance variable memory is, and thus the higher the storage density of the ferro-resistance variable memory is.

[0045] Based o...

Embodiment 2

[0082] Figure 10 It is a schematic flowchart of a writing method of a ferro-resistive variable memory provided in Embodiment 2 of the present invention, see Figure 10 , on the basis of the first embodiment above, the ferroelectric RRAM provided by this embodiment includes a substrate layer, a bottom electrode, a switch layer and a top electrode stacked in sequence; the switch layer includes a ferroelectric layer and is adjacent to the ferroelectric layer at least one semiconductor layer. The writing method of the ferro-resistive variable memory provided in this embodiment includes:

[0083] S210. Obtain a write instruction of the ferro-resistive variable memory.

[0084] Wherein, the write instruction refers to a machine instruction obtained by a control circuit connected to the ferro-resistive variable memory, which exemplarily includes corresponding instructions such as typing characters or pasting pictures, and the acquisition path exemplarily includes using a keyboard ...

Embodiment 3

[0093] Figure 11 It is a schematic flowchart of a method for reading ferro-resistive memory provided in Embodiment 3 of the present invention, see Figure 11 , on the basis of the first embodiment above, the ferroelectric RRAM provided by this embodiment includes a substrate layer, a bottom electrode, a switch layer and a top electrode stacked in sequence; the switch layer includes a ferroelectric layer and is adjacent to the ferroelectric layer at least one semiconductor layer. The writing method of the ferro-resistive variable memory provided in this embodiment includes:

[0094] S310. Obtain a read instruction of the FRAM.

[0095] Wherein, wherein, the reading instruction refers to a machine instruction obtained by a control circuit connected to the ferro-resistive variable memory, exemplarily including instructions corresponding to displaying characters, displaying pictures, playing audio and video, etc., and the obtaining path includes clicking the mouse and other ac...

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Abstract

The invention discloses a ferromagnetic random access memory, a writing method thereof, a reading method thereof and a preparation method thereof. The iron resistance variable memory includes a substrate layer, a bottom electrode, a switch layer and a top electrode which are successively stacked. The switch layer includes a ferroelectric layer and at least one semiconductor layer disposed adjacentto the ferroelectric layer. The ferroelectric layer is polarized under the effect of an electric field and is configured to change the potential barrier of the switch layer. By adding at least one semiconductor layer to the switch layer and disposing the semiconductor layer adjacent to the ferroelectric layer, a variable barrier layer is provided so as to increase the resistance ratio of the highand low resistance states of the switch layer under the effect of the electric field, that is, the storage window of the ferromagnetic random access memory is increased. Thus, the high-density storage of the ferromagnetic random access memory is realized, and the small storage window of the ferromagnetic random access memory is solved.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors and storage devices, and in particular to a ferro-resistive variable memory, a writing method, a reading method, and a manufacturing method thereof. Background technique [0002] Ferroelectric materials have two stable polarization states, and the ferroelectric switching rate is very fast under the action of an external electric field. Especially with the development of modern thin film technology, ferroelectric materials have been widely studied and applied. Ferromagnetic Random Access Memory (FRAM or FeRAM for short) is the earliest commercialized non-volatile memory, which mainly uses the two polarization states of ferroelectric materials to flip under the action of an applied electric field to encode the values ​​in Boolean algebra respectively. 0 and 1, to achieve information storage. [0003] The typical structure of FRAM at this stage is: top electrode-ferroelectric mate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/011
Inventor 徐泽东陈朗
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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