Thin-film transistor, its manufacturing method, and display

A thin-film transistor and source technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of inability to obtain conduction current, achieve improved carrier mobility, high performance, and suppress leakage current Effect

Inactive Publication Date: 2009-09-23
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this thin film transistor has a higher off-current than the case where an n-type microcrystalline silicon layer or an n-type amorphous silicon layer is used as a single layer, but cannot obtain sufficient on-current

Method used

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  • Thin-film transistor, its manufacturing method, and display
  • Thin-film transistor, its manufacturing method, and display
  • Thin-film transistor, its manufacturing method, and display

Examples

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no. 1 example

[0038] figure 1 is a cross-sectional view of the thin film transistor for explaining the first embodiment. The thin film transistor 1 shown in the figure is an n-type bottom gate thin film transistor. Strip-shaped gate electrodes 3 formed of, for example, molybdenum are pattern-formed on a substrate 2 made of an insulating substrate such as glass. The gate electrode 3 is not particularly limited, and the material may not be molybdenum as long as the material is a refractory metal that is hardly changed by heat generated when the crystallization process is performed.

[0039] A gate insulating film 4 made of, for example, a silicon oxide film is also formed to cover the gate electrode 3 . The gate insulating film 4 may be formed of a silicon nitride film, a silicon oxynitride film, or a laminated film thereof, other than a silicon oxide film.

[0040] Further, a channel layer 5 made of, for example, amorphous silicon is pattern-formed on this gate insulating film 4 in a sta...

no. 2 example

[0084] (thin film transistor)

[0085] Figure 9 is a cross-sectional view of a thin film transistor for explaining the second embodiment. The thin film transistor 1' shown in this figure is a top gate type thin film transistor, and a source layer 7 and a drain layer 8 are provided by being laminated on a source electrode 9 and a drain electrode 10 patterned on a substrate 2 . Furthermore, as a characteristic structure in the present invention, source / drain layers 7 and 8 contain impurities with a concentration gradient such that the concentration becomes lower toward channel layer 5 . Specifically, the source layer 7 has a two-layer structure consisting of the second silicon layer 7b covering the source electrode 9 and the first silicon layer 7a on the second silicon layer, and the drain layer 8 has a silicon layer covering the drain electrode 10. A two-layer structure composed of the second silicon layer 8b and the first silicon layer 8a on the second silicon layer. Ther...

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Abstract

A thin-film transistor in which a gate electrode (3), a gate insulating film (4), a channel layer (5), and source / drain layers (7, 8) are stacked in this order or in the reverse order from this on a substrate (2) is characterized in that impurities are contained in the source / drain layers (7, 8) while the impurities have a concentration gradient that becomes lower concentration toward the channel layer (5). The thin-film transistor capable of increasing an on / off ratio, its manufacturing method, and display are provided.

Description

technical field [0001] The present invention relates to a thin film transistor, its manufacturing method, and a display device, and more particularly, to a thin film transistor suitable for driving a current-driven element such as an organic EL element, its manufacturing method, and a display device. Background technique [0002] In recent years, a display device that displays an image using an organic EL (Electroluminescence) phenomenon has attracted attention as a type of flat panel display. This display device, that is, an organic EL display, has excellent characteristics such as a wide viewing angle and low power consumption due to the use of the light emission phenomenon of the organic light emitting element itself. In addition, since a high response is shown to a high-definition high-speed video signal, development for practical applications is ongoing, especially in the video field. [0003] Among the driving systems of organic EL displays, active matrix systems usin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336
CPCH01L29/66765H01L29/66757H01L29/78621H01L29/04H01L29/78618H01L29/78696
Inventor 中山彻生荒井俊明
Owner SONY CORP
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