2013results about How to "Adjustable thickness" patented technology

A light emitting diode is disclosed which can enhance the scattering of light produced by a light emitting element to improve a brightness not only at an upper surface but also at side surfaces of a resin sealant covering the light emitting element, thereby providing a high brightness level in a wider range of angle. This light emitting diode comprises a substrate 22, a pair of electrodes 23a, 23b provided on the substrate, a light emitting element 24 mounted on the substrate and electrically connected to the electrodes, a sealant 26 provided on the substrate to seal the electrodes 23a, 23b and the light emitting element 24; and a light scattering layer 30 formed on an outermost layer of a light projecting surface 27 of the sealant 26.

The invention relates to a method to construct 3D microstructure. It includes the following steps: using photoengraving method to construct 2D microstructure surface, extruding polymer performed polymer or ultraviolet glue precursor into the slot on 2D microstructure surface and taking heat or light polymerization to gain target material; constructing polymer or ultraviolet exposal glue array structure, washing sacrificed material at one time to gain the 3D microstructure. The invention has potential application value in the fields of shape, size, thickness, material, photon crystal, catalyst carrier, etc.

A method for manufacturing a semiconductor device by a small number of processes and by a means with high usability of materials to have high-definition and a gate insulating with a high step coverage property is disclosed. According to the present invention, a method for manufacturing a semiconductor device comprises the steps of forming a plurality of first conductive layers over a substrate; forming a first insulating layer to fill the gaps of the plurality of the first conductive layers; forming a second insulating layer over the first insulating layer and the plurality of the first conductive layers; and forming a semiconductor region and a second conductive layer over the second insulating layer.

A step of forming an insulating resin layer 31 includes a process of forming the insulating resin layer 31 made of a photo-sensitive resin on a load beam or a flexure 11 and an exposing and developing process in which a photo-mask 32 having different light transmittance between a part corresponding to a part near a slider mounting part 22 and other parts is applied to the insulating resin layer 31, exposed and developed so that the thickness of the insulating resin layer 31 of the part near the slider mounting part 22 is smaller than the thickness of the insulating resin layer 31 of other parts.

The invention relates to a device and a method for continuous compounding electroplating metal and nanometer granules on carbon fiber surfaces, which mainly comprises a long carbon fiber bundle electrode, an electrode, a direct current source, a neutralizing tank, a filtering pump, a circulating pump, a washing tank, a drive gear, a drying device, a pay-off pulley, a connection layout, an electroplating bath and a take-up pulley. The device and the method are used to the compound plating of carbon fiber surface metal (such as copper or nickel) and nanometer granules (such as carbon nanometer tubes, Fe3O4 and the like), the obtained plating layer is homogeneous and has good continuity, the thickness is adjustable, and a plurality of bundles of carbon fiber can simultaneously be electroplated, and the plating layer is applicable for mass production in industry, the carbon fiber continuous electroplating technology can solve black core (uneven) problem, which enables the surface of each fiber of the fiber bundles to obtain humongous and high quality nanometer compound plating layer.

The invention relates to a hollow porous spherical platinum-silver alloy nano-material and a preparation method for the same. The nano-material is of a spherical structure with a porous shell and an internal cavity, the diameter of the spherical structure ranges from 5 nanometers to 500 nanometers, the inner diameter of the cavity ranges from 1 nanometer to 400 nanometers, the thickness of a porewall ranges from 1 nanometer to 50 nanometers, and the pore diameter ranges from 1 nanometer to 20 nanometers. Polyatomic alcohol, inorganic silver salt precursor, inorganic platinum salt precursor and polyvinylpyrrolidone are used as reaction raw materials, inorganic salt containing halogen ions and copper-containing inorganic salt are used as auxiliaries, and the hollow porous spherical platinum-silver alloy nano-material is synthesized by means of reaction. The preparation method is simple in process, convenient in operation, fine in repeatability and low in cost, and the obtained hollow porous spherical platinum-silver alloy nano-material can be used for the fields of chemical and electrochemical catalysis, chemical sensors, biomolecular sensors, information storage, fuel cells, solarcells and the like. Particularly, the hollow porous structure of the nano-material can be effectively applied to slow drug release and target-oriented drug delivery treatment.

An apparatus based on laser impact technique for pressurizing the water restraining layer is composed of water cleaning unit, water flow controlling box, adjustable tap, following controller of tap, water recovering unit, pressure regulating knob and microcomputer controller. Its method includes such steps as cleaning water, controlling the speed and flow of water stream for preventing turbulent flow and ensuring high thickness uniformity of water layer and pressurizing effect, and recovering water for reuse.

According to one aspect, the invention relates to an asymmetric MIM type absorbent nanometric structure (1, 1′) intended to receive a wide-band incident light wave the absorption of which is to be optimised within a given spectral band, comprising an absorbent dielectric layer (10) in said spectral band, of subwavelength thickness, arranged between a metal array (11) of subwavelength period and a metal reflector (12). The elements (110, 120) forming the metal array exhibit at least one dimension (w) suitable for forming a plasmonic resonator between the metal array and the metal reflector, under the elements of the array, which plasmonic resonator forms a Fabry-Pérot type longitudinal cavity resonating at a first wavelength of the aimed-for spectral absorption band, and the absorber layer exhibits, between the metal array and the metal reflector, at least one first thickness (ta) suitable for forming at least one first Fabry-Pérot type vertical cavity, resonating at a second wavelength of the aimed-for absorption spectral band.

The invention relates to the field of preparation and application of two-dimensional materials, in particular to a method for effectively preparing a high-orientation and high-compactness two-dimensional material thin film. The method comprises the following steps: taking a circular tube with a smooth inner surface as a casting die; pouring a solution which contains a two-dimensional material intothe die when the die rotates in the peripheral direction at high speed; uniformly coating the inner surface of the die with the solution by using centrifugal force; forming shear force which drives the two-dimensional material to be regularly arranged layer by layer in an oriented manner in the peripheral direction in the solution in a centrifugal rotating process; and meanwhile, driving the two-dimensional material to be accumulated at high compactness by the centrifugal force so as to obtain the two-dimensional material thin film with high orientation and high compactness. The method is suitable for preparing various two-dimensional materials such as graphene, and composite thin films and laminated heterostructure thin films of the two-dimensional materials; electric property, heat property, mechanical property and the like of the thin film are greatly improved; and the method is used in the field of high-performance electric conduction / heat-conduction thin films, heat management materials, high-strength thin films, electronic / optoelectronic devices, compact energy storage, gas / ion separating films, proton transmitting films and the like.

A light emitting diode is disclosed which can enhance the scattering of light produced by a light emitting element to improve a brightness not only at an upper surface but also at side surfaces of a resin sealant covering the light emitting element, thereby providing a high brightness level in a wider range of angle.This light emitting diode comprises a substrate 22, a pair of electrodes 23a, 23b provided on the substrate, a light emitting element 24 mounted on the substrate and electrically connected to the electrodes, a sealant 26 provided on the substrate to seal the electrodes 23a, 23b and the light emitting element 24; and a light scattering layer 30 formed on an outermost layer of a light projecting surface 27 of the sealant 26.

The invention discloses a method for preparing a high-temperature resistant anti-infrared thermal radiation energy-saving coating. The method comprises the following steps of: adding inorganic crystal whisker or / and fiber materials to sol containing titanium and kalium elements, evenly stirring the mixture to form pulp; and coating the pulp on the surface of heat insulating materials, fireproof materials or thermal insulating materials, and sintering the pulp at the temperature of between 200 and 700 DEG C for 0.5 to 5 hours to form compact coatings with the thickness of 0.1 to 5mm, wherein the content of the inorganic crystal whisker or / and fiber materials in the pulp is 5 to 70 weight percent. In the temperature range of between 400 and 1,200 DEG C, the reflectivity of the compact coating which is prepared by the method in a thickness of 0.1 to 5mm on the infrared thermal radiation with the wave length of 500 to 2,500nm is over 90 percent, and after the coating of the invention undergoes 5 thermal shock stability tests at the temperature of 1,000 DEG C, no crack occurs.

The present invention provides a liquid crystal display device having a high display quality. The liquid crystal display device displays an image by applying a voltage by a first electrode and a second electrode across a liquid crystal layer which takes a vertical alignment in the absence of an applied voltage. The first electrode includes a lower conductive layer, a dielectric layer covering at least a portion of the lower conductive layer, and an upper conductive layer provided on one side of the dielectric layer which is closer to the liquid crystal layer. The upper conductive layer includes a first opening, and the lower conductive layer is provided so as to oppose at least a portion of the first opening via the dielectric layer.