2015results about How to "Adjustable thickness" patented technology

A method for manufacturing a semiconductor device by a small number of processes and by a means with high usability of materials to have high-definition and a gate insulating with a high step coverage property is disclosed. According to the present invention, a method for manufacturing a semiconductor device comprises the steps of forming a plurality of first conductive layers over a substrate; forming a first insulating layer to fill the gaps of the plurality of the first conductive layers; forming a second insulating layer over the first insulating layer and the plurality of the first conductive layers; and forming a semiconductor region and a second conductive layer over the second insulating layer.

A step of forming an insulating resin layer 31 includes a process of forming the insulating resin layer 31 made of a photo-sensitive resin on a load beam or a flexure 11 and an exposing and developing process in which a photo-mask 32 having different light transmittance between a part corresponding to a part near a slider mounting part 22 and other parts is applied to the insulating resin layer 31, exposed and developed so that the thickness of the insulating resin layer 31 of the part near the slider mounting part 22 is smaller than the thickness of the insulating resin layer 31 of other parts.

The invention relates to the field of preparation and application of two-dimensional materials, in particular to a method for effectively preparing a high-orientation and high-compactness two-dimensional material thin film. The method comprises the following steps: taking a circular tube with a smooth inner surface as a casting die; pouring a solution which contains a two-dimensional material intothe die when the die rotates in the peripheral direction at high speed; uniformly coating the inner surface of the die with the solution by using centrifugal force; forming shear force which drives the two-dimensional material to be regularly arranged layer by layer in an oriented manner in the peripheral direction in the solution in a centrifugal rotating process; and meanwhile, driving the two-dimensional material to be accumulated at high compactness by the centrifugal force so as to obtain the two-dimensional material thin film with high orientation and high compactness. The method is suitable for preparing various two-dimensional materials such as graphene, and composite thin films and laminated heterostructure thin films of the two-dimensional materials; electric property, heat property, mechanical property and the like of the thin film are greatly improved; and the method is used in the field of high-performance electric conduction / heat-conduction thin films, heat management materials, high-strength thin films, electronic / optoelectronic devices, compact energy storage, gas / ion separating films, proton transmitting films and the like.

A light emitting diode is disclosed which can enhance the scattering of light produced by a light emitting element to improve a brightness not only at an upper surface but also at side surfaces of a resin sealant covering the light emitting element, thereby providing a high brightness level in a wider range of angle.This light emitting diode comprises a substrate 22, a pair of electrodes 23a, 23b provided on the substrate, a light emitting element 24 mounted on the substrate and electrically connected to the electrodes, a sealant 26 provided on the substrate to seal the electrodes 23a, 23b and the light emitting element 24; and a light scattering layer 30 formed on an outermost layer of a light projecting surface 27 of the sealant 26.

The present invention provides a liquid crystal display device having a high display quality. The liquid crystal display device displays an image by applying a voltage by a first electrode and a second electrode across a liquid crystal layer which takes a vertical alignment in the absence of an applied voltage. The first electrode includes a lower conductive layer, a dielectric layer covering at least a portion of the lower conductive layer, and an upper conductive layer provided on one side of the dielectric layer which is closer to the liquid crystal layer. The upper conductive layer includes a first opening, and the lower conductive layer is provided so as to oppose at least a portion of the first opening via the dielectric layer.