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Technology for improving GeSbTe phase change property and thin film preparation method thereof

A thin film preparation, ge-sb-te technology, applied in the field of microelectronics, can solve the problems of poor thermal stability, poor data retention, low crystallization temperature, etc., to improve thermal stability, high and low resistance value difference, crystallization temperature and the effect of improving data retention

Inactive Publication Date: 2015-04-01
QUFU NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the poor thermal stability caused by the low crystallization temperature and poor data retention of Ge-Sb-Te materials has been restricting its further development in special fields

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] (1) Using TiN target and Ge 2 Sb 2 Te 5 Target double-target co-sputtering method to deposit thin films on Si wafers and SiO wafers. Among them, the background vacuum is better than 10 -4 Pa, the purity of the argon gas introduced is more than 99.999%, and the temperature is room temperature. Under the above conditions, the following three films were prepared:

[0020] TiN 15W GST 5W (TiN) 0.75 (Ge 2 Sb 2 Te 5 ) 0.25

[0021] TiN 15W GST 10W (TiN) 0.61 -(Ge 2 Sb 2 Te 5 ) 0.39

[0022] TiN 15W GST 15W (TiN) 0.52 -(Ge 2 Sb 2 Te 5 ) 0.48

[0023] (2) The film grown on the SiO sheet was tested for in-situ resistance. With increasing TiN content, (TiN) 1-X -(Ge 2 Sb 2 Te 5 ) X The crystallization temperature is gradually increased, and the ten-year data retention temperature can reach 180 o C above, note (TiN) 1-X -(Ge 2 Sb 2 Te 5 ) X thermal stability of the material compared to Ge 2 Sb 2 Te 5 has been greatly improved.

[0024] (3) Take...

Embodiment 2

[0034] Adopt the same technical scheme as Embodiment 1, the difference is that Ge 2 Sb 2 Te 5 The phase change material was changed to Ge 4 Sb 2 Te 5 Phase change material, the preparation method of phase change material layer is magnetron sputtering, by magnetron sputtering TiN target and Ge 4 Sb 2 Te 5 Target acquisition (TiN) 1-X -(Ge 4 Sb 2 Te 5 ) X For the material film, the rest of the steps are exactly the same as in Example 1, which can achieve better technical effects.

Embodiment 3

[0036] Adopt the same technical solution as in Example 1, the difference is that (TiN) 1-X -(Ge-Sb-Te) X The preparation method of the phase-change material layer is changed to electron beam evaporation, and the source of electron beam evaporation is TiN and Ge-Sb-Te block or powder materials. The rest of the steps are exactly the same as those in Example 1, and the same technical effect can also be achieved.

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Abstract

The invention provides a technology for improving the GeSbTe phase change property and a thin film preparation method. A compound is formed by adding TiN into a Ge-Sb-Te phase change material, and the chemical formula of the compound is (TiN)1-x-( Ge-Sb-Te)X (wherein X is greater than 0.1 and smaller than 1), so that the thermal property and the electrical property of the Ge-Sb-Te phase change material can be improved. The crystallizing temperature (-160 DEG C), the thermal stability and the data retention capacity of the Ge-Sb-Te phase change material are not ideal, so that the application of Ge-Sb-Te in a phase change storage material is always restricted. A TiN material is extremely high in thermal stability; due to combination of two alloy materials, a novel material (TiN)1-x-( Ge-Sb-Te)X is obtained, and the novel (TiN)1-x-( Ge-Sb-Te)X is higher in electrical property and higher in thermal stability and data retention capacity compared with the Ge-Sb-Te phase change material.

Description

technical field [0001] The present invention relates to a technology for improving the performance of Ge-Sb-Te phase change material and its film preparation method, especially suitable for (TiN) of phase change memory 1-X -(Ge-Sb-Te) X A thin film phase change material belongs to the field of microelectronics. Background technique [0002] In recent years, with the innovation of electronic technology, various communication devices, smart phones, tablet computers and other mobile devices have gradually become popular in people's daily work and life. Driven by this background, as a key component of mobile devices, mobile memory including flash memory, embedded multimedia card and mobile dynamic random access memory (DRAM) has become the growth engine of the memory market. However, due to the development limitation of Moore's Law, the increase of manufacturing cost has caused a huge obstacle to the mass production of flash memory and DRAM with nodes below 20nm, and it is imp...

Claims

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Application Information

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IPC IPC(8): H01L45/00C22C12/00
Inventor 韩培高吴良才孟云徐岭马忠元宋志棠
Owner QUFU NORMAL UNIV
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