259results about "Germanium organic compounds" patented technology

Provided are a Ge precursor for low temperature deposition containing Ge, N, and Si, a GST thin layer doped with N and Si formed using the same, a memory device including the GST thin layer doped with N and Si, and a method of manufacturing the GST thin layer. The Ge precursor for low temperature deposition contains N and Si such that the temperature at which the Ge precursor is deposited to form a thin layer, particularly, the GST thin layer doped with N and Si, can be low. In addition, during the low temperature deposition, H2 plasma can be used. The GST phase-change layer doped with N and Si formed from the Ge precursor for low temperature deposition has a low reset current. Therefore, a memory device including the GST phase-change layer doped with N and Si can be highly integrated, have a high capacity, and can be operated at a high speed.

By providing a novel polycyclic aromatic compound in which a plurality of aromatic rings are linked via a boron atom, a nitrogen atom, or the like, options of a material for an organic EL element are increased. In addition, by using the novel polycyclic aromatic compound as a material for an organic electroluminescent element, an excellent organic EL element is provided.

Antimony, germanium and tellurium precursors useful for CVD / ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Germanium, tellurium, and / or antimony precursors are usefully employed to form germanium-, tellurium- and / or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.

An organic electroluminescence device includes: a pair of electrodes; and at least one organic layer including a light emitting layer, the light emitting layer being provided between the pair of electrodes, wherein at least one layer of the at least one organic layer contains a compound represented by formula (1):wherein each of Z11 and Z12 independently represents an aromatic heterocyclic ring or an aromatic hydrocarbon ring; R11 represents a hydrogen atom or a substituent, provided that a plurality of R11s are the same or different; m represents an integer of 1 or more; and L1 represents a single bond or an m-valent linking group and is linked to any one of C atoms in R11, Z11 and Z12, provided that when m is 1, L1 does not exist.

A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

Antimony, germanium and tellurium precursors useful for CVD / ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

The invention provides a coordination polymer material with a multistage pore passage structure and a preparation method thereof. The coordination polymer material with a multistage pore passage structure is internally provided with the multistage pore passage structure, the multistage pore passage structure is a microporous and / or mesoporous and / or macroporous multistage pore passage structure which is formed by the self assembly between the metal ion and the organic ligand, the apertures of the micropores are less than or equal to 2nm, the apertures of the mesopores are from 2nm to 50nm, and the apertures of the macropores are more than 50nm. The coordination polymer material with a multistage pore passage structure is large in specific surface, the large-size organic ligand does not need to be synthesized, and the coordination polymer material with larger porous sizes can be obtained without the template agent and the pore assisting agent, so that the invention is simple in preparation method, and low in cost.

A nonaqueous electrolytic solution having an electrolyte salt dissolved in an organic solvent, which contains a silicon compound having an unsaturated bond which is represented by formula (I): wherein R1, R2, R3, R4, R5, and R6 each represent an alkyl group, an alkoxy group, an alkenyl group, an alkenyloxy group, an alkynyl group, an alkynyloxy group, an aryl group or an aryloxy group, each of which may have an ether bond in the chain thereof; n represents a number of from 0 to 5; when n is 1 to 5, X represents a single bond, an oxygen atom, an alkylene group, an alkylenedioxy group, an alkenylene group, an alkenylenedioxy group, an alkynylene group, an alkynylenedioxy group, an arylene group or an arylenedioxy group; provided that at least one of R1, R2, R3, R4, R5, R6, and X represents a group containing an unsaturated bond,an organotin compound or an organogermanium compound and a nonaqueous secondary battery having the same.

The present invention provides a class of chemical compounds useful as efficacious drugs in the treatment of sickle cell disease and diseases characterized by unwanted or abnormal cell proliferation. The active compounds are substituted triaryl methane compounds or analogues thereof where one or more of the aryl groups is replaced with a heteroaryl, cycloalkyl or heterocycloalkyl group and / or the tertiary carbon atom is replaced with a different atom such as Si, Ge, N or P. The compounds inhibit mammalian cell proliferation, inhibit the Gardos channel of erythrocytes, reduce sickle erythrocyte dehydration and / or delay the occurrence of erythrocyte sickling or deformation.

Methods of preparing Group IVA and Group VIA organometallic compounds, particularly Group IVA organometallic compounds, are provided. Such manufacturing methods employ an amine and / or phosphine catalyst in a transalkylation step and may be performed in a batch, semi-continuous or continuous manner.

The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.

A germanium (Ge) compound is provided. The Ge compound has a chemical formula GeR1xR2y. “R1” is an alkyl group, and “R2” is one of hydrogen, amino group, allyl group and vinyl group. “x” is greater than zero and less than 4, and the sum of “x” and “y” is equal to 4. Methods of forming the Ge compound, methods of fabricating a phase change memory device using the Ge compound, and phase change memory devices fabricated using the Ge compound are also provided.

The present invention relates to a novel diamine derivative, a method for preparation thereof, and an organic electronic device using the same. The diamine derivative according to the present invention can serve as a hole injecting, hole transporting, electron injecting, electron transporting, or light emitting material in an organic electronic device including an organic light emitting device. Particularly, it can be used as a light emitting material as used alone, and also serve as a light emitting host, or a light emitting dopant, in particular, a blue light emitting dopant. The organic electronic device according to the present invention exhibits excellent characteristics in terms of efficiency, drive voltage, life time, and stability.

A method for depositing a germanium containing film on a substrate is disclosed. A reactor, and at least one substrate disposed in the reactor, are provided. A germanium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Germanium is deposited onto the substrate through a deposition process to form a thin film on the substrate.

Methods and compositions for depositing a tellurium containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate.

An organic EL device includes an emitting layer provided between an anode and a cathode. The emitting layer contains a diaminopyrene derivative represented by the following formula (1) as an emitting material for the organic EL device. The diaminopyrene derivative emits light with electrical energy.In the formula, X and X′ each independently represent a substituent containing at least one of Ge, P, B and Si.d and e each represent an integer of 0 to 5 while d+e≧1 is satisfied. When d is 2 or more, the plurality of X may be mutually the same or different and may be bonded together to form a saturated or unsaturated ring. When e is 2 or more, the plurality of X′ may be mutually the same or different and may be bonded together to form a saturated or unsaturated ring.

Composition with at least one polymerizable binder and one polymerization initiator, which contains at least one acylgermanium compound according to general Formula (I),and the use of acylgermanes of Formula (I) as initiators for radical polymerization or for the preparation of dental restorations.

A dehydrocoupling polycondensation method for synthesizing polymetalloles including obtaining a dihydrometallole that includes silicon or germanium atoms, designating a reducing agent for preparation of dihydrometallole monomer, measuring a predetermined molar percentage of the reducing agent corresponding to a molar amount of the dihydrometallole, selecting a catalyst, and reacting the catalyst with the dihydrometallole to obtain a polymetallole. A method for detecting an analyte that may be present in ambient air or complex aqueous media including providing a polymer or copolymer containing a metalloid-metalloid backbone, exposing the polymer or copolymer to a suspected analyte or a system suspected of including the analyte, and measuring a quenching of photoluminescence of the metallole polymer or copolymer exposed to the system.

Provided are a Ge precursor for low temperature deposition containing Ge, N, and Si, a GST thin layer doped with N and Si formed using the same, a memory device including the GST thin layer doped with N and Si, and a method of manufacturing the GST thin layer. The Ge precursor for low temperature deposition contains N and Si such that the temperature at which the Ge precursor is deposited to form a thin layer, particularly, the GST thin layer doped with N and Si, can be low. In addition, during the low temperature deposition, H2 plasma can be used. The GST phase-change layer doped with N and Si formed from the Ge precursor for low temperature deposition has a low reset current. Therefore, a memory device including the GST phase-change layer doped with N and Si can be highly integrated, have a high capacity, and can be operated at a high speed.

The present invention is to provide a polymerizable compound which can be a raw material for a resin having high transparency, good heat resistance and mechanical strength required for optical components such as plastic lenses and the like, while attaining a high refractive index (nd) exceeding 1.7, and an optical component composed of such a resin. Disclosed is a compound represented by the general formula (3), wherein, in the formula, M represents a metal atom; X1 and X2 each independently represent a sulfur atom or an oxygen atom; R1 represents a divalent organic group; m represents an integer of 0 or 1 or more; p represents an integer of from 1 to n; q represents an integer of from 1 to (n-p); n represents a valence of a metal atom M; Yq each independently represent an inorganic or organic residue; and when q is 2 or more, Yq may be bonded to one another for forming a ring structure with the intermediary of a metal atom M.

Disclosed herein are polysilole and polygermole compounds. The silicon or germanium ring atom is directly linked in the polymer to another silicon or germanium ring atom from another polymer unit. The result is compounds that fluoresce and have electroluminescence. Coupling reactions to form such compounds are also disclosed.

A method of controlling Take-All disease of plants by applying a fungicide of the formula wherein Z1 and Z2 are C and are part of an aromatic ring which is [benzothiophene]thiophene; and A is [selected from] -C(X)-amine [wherein the amine is an unsubstituted, monosubstituted or disubstituted amino radical]wherein the amine is a monosubstituted or a disubstituted amine, wherein one of the substituents has a cyclic moiety, said cyclic moiety which is chosen from the group consisting of thienyl, furanyl, and a non-heterocyclic substituent, wherein when the amine is disubstituted, the second substituent is a non-cyclic substituent, -C(O)-SR3, -NH-C(X)R4, [and] or -C(=NR3)-XR7; B is -Wm-Q(R2)3 or selected from [O-tolyl]o-tolyl, 1-naphthyl, 2-naphthyl, and 9-phenanthryl, each optionally substituted with halogen or R4; Q is C, Si, Ge, or Sn; W is -C(R3)pH(2-p)-; or when Q is C, W is selected from [-C(R3)pH(2-p),[-C(R3)pH(2-p)-, -N(R3)mH(1-m)-, [-S(O)p-,] -S(O)p-, and -O-, X is [0] O or S; n is [0, 1, 2, or 3]2; m is 0 or 1; p is 0, 1, or 2; wherein the two R groups are combined with the thiophene ring to form a fused ring which is benzothiophene; each R and R2 is independently defined herein; R3 is C1-C4 alkyl; R4 is C1-C4 alkyl, haloalkyl, alkoxy, alkylthio, alkylamino, or dialkylamino; and R7 is C1-C4 alkyl, haloalkyl, or phenyl, optionally substituted with halo, nitro, or R4; or an agronomic salt thereof.

A method of depositing a Group IV metal-containing film on a substrate by conveying one or more of certain Group IV organometallic compounds in a gaseous phase to a deposition reactor containing a substrate and decomposing the one or more Group IV organometallic compounds to form a film of a Group IV metal on the substrate is provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.

A compound represented by Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed.In Chemical Formula 1, each substituent is the same as defined in the detailed description.

The invention provides a metallic complex taking pyridine as parent body. It comprises following steps: taking picoline as raw material, placing trimethyl silicon base on substituent group after modification, carrying out addition reaction with benzenenitrile and getting a kind of metallic organic compound complexed witheta3-aza and pyridine. The method is characterized by temperate reaction condition, simple process, fast reaction speed and high productivity. The complex can be used as catalyst for alkene polymerization, and is characterized by long endurance, low cost, stable performance for oxygen atom and other foreign atoms in functional group, high activity and adjustable selectivity.

The invention pertains to the use of Group 8 transition metal carbene complexes as catalysts for olefin cross-metathesis reactions. In particular, ruthenium and osmium alkylidene complexes substituted with an N-heterocyclic carbene ligand are used to catalyze cross-metathesis reactions to provide a variety of substituted and functionalized olefins, including phosphonate-substituted olefins, directly halogenated olefins, 1,1,2-trisubstituted olefins, and quaternary allylic olefins. The invention further provides a method for creating functional diversity using the aforementioned complexes to catalyze cross-metathesis reactions of a first olefinic reactant, which may or may not be substituted with a functional group, with each of a plurality of different olefinic reactants, which may or may not be substituted with functional groups, to give a plurality of structurally distinct olefinic products. The methodology of the invention is also useful in facilitating the stereoselective synthesis of 1,2-disubstituted olefins in the cis configuration.

Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.