401 results about "Boron atom" patented technology

The present invention addresses the problem of providing a novel polycyclic aromatic compound and an organic electroluminescent element using the same. The above problem is solved by providing a novel polycyclic aromatic compound in which a plurality of aromatic rings are connected by boron atoms, oxygen atoms, or the like, thereby increasing the number of options for organic EL element materials, and also solved by providing a superior organic EL element using said novel polycyclic aromatic compound as an organic EL element material.

Provided is an organic EL element having optimum light emission characteristics using a light-emitting layer material comprising a novel polycyclic aromatic compound (1) in which a plurality of aromatic rings are linked by a boron atom and a nitrogen atom or a multimer thereof, and a specific anthracene compound (3) that is combined with the novel polycyclic aromatic compound (1) or the multimer thereof to exhibit optimum light emission characteristics. Rings A-C are an aryl ring, etc., Y1 is B, X1 and X2 are N-R, the R in the N-R is an aryl, etc., and Ar3 and Ar4 are hydrogen, a phenyl, or agroup represented by formula (4), etc.

A lithium ion secondary battery that operates at a high voltage, has a high cycle life, and generates less gas, and an electrolytic solution for such a lithium ion secondary battery. An electrolytic solution for a non-aqueous energy storage device, comprising: a non-aqueous solvent; a lithium salt (A) having no boron atom; a predetermined lithium salt (B) containing a boron atom; and a compound (C) in which at least one of hydrogen atoms in an acid selected from the group consisting of proton acids having a phosphorus atom and / or a boron atom, sulfonic acids, and carboxylic acids is replaced with a substituent represented by formula (3):wherein R3, R4, and R5 each independently represent an organic group which has 1 to 10 carbon atoms and which may have a substituent.

An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing boron into the semiconductor substrate surrounding the spacer for forming a source / drain region. The weight ratio of each boron atom within the molecular cluster is preferably less than 10%. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the source / drain region.

A carbon-based material in accordance with the present invention includes graphene doped with metal atoms and at least one type of non-metal atoms selected from a group consisting of nitrogen atoms, boron atoms, sulfur atoms, and phosphorus atoms. A diffraction pattern obtained by X-ray diffraction measurement of the carbon-based material by use of CuKα radiation showing that a proportion of the highest of intensities of peaks derived from an inactive metal compound and a metal crystal to an intensity of a (002) peak is 0.1 or less.

The invention discloses a method for improving light degradation of a boron-doped crystalline silicon solar cell. The method comprises the following steps: heating a solar cell to enable the temperature to reach a first temperature and keeping constant temperature for a first preset time; electrifying the solar cell at constant temperature with preset current; electrifying for a second preset time; cooling the solar cell under electrifying state and reducing the temperature to be below the second temperature; after heating and performing constant temperature treatment on the solar cell, electrifying, combining boron atom and oxygen atom in the solar cell into a B-O pair, and combining with hydrogen atom in the surface film and forming into an H-B-O pair; generating the H-B-O pair to enable the B-O pair to deactivate. After the treatment according to the method provided by the invention, the B-O pair complex in the solar cell is reduced, so that the light degradation amplitude is reduced and the light degradation phenomenon of the boron-doped crystalline silicon solar cell can be effectively improved.

An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

The invention discloses a preparation method of a hexagonal phase boron nitride film. The preparation method comprises the following steps: by a physical vapor deposition method, providing boron atoms by a solid boron source, and forming the hexagonal phase boron nitride film on a substrate, wherein the deposition speed of physical vapor deposition is 0.01 nm / min-20 nm / min, and in the film forming process, the substrate temperature is controlled at 20-1600 DEG C; and the temperature is reduced to room temperature at a speed of 10-400 DEG C / min. when the hexagonal phase boron nitride film is prepared by the preparation method, the solid boron source is used, so that the safety is high, and the preparation method is simple, and easy to implement; the prepared hexagonal phase boron nitride film consists of 1-200 hexagonal phase boron nitride unit layers; and the two-dimensional hexagonal phase boron nitride film prepared by the preparation method has excellent insulating property and flatness and can be used for improving performance of a graphene optoelectronic device.

The invention discloses a diamond-cubic boron nitride type universal superhard cutter material, a cutter and a preparation method of the material. The material is characterized in that diamond and cubic boron nitride are used as raw materials, the pre-treatment and the forming are performed on the raw materials to obtain a blank; the blank assembled with a sintering unit is arranged in a high temperature and high pressure device, wherein the intensity of pressure is 7-25GPa, the temperature is 1000-2700 DEG C, the sintering solution strengthening lasts for 10s-30min, the sizes of obtained crystal grains are uniform, and interfaces of the crystal grains are tight and closed; the compact-structure diamond-cubic boron nitride type universal superhard cutter material which is high in atomic density, is in a three-dimensional network shape and has strong covalent bonds can be formed by boron atoms, carbon atoms and nitrogen atoms at the crystal interfaces between the diamond and the cubic boron nitride. The universal superhard material is processed into a cylinder with the same height; two ends of the cylinder are polished and finished and then are processed to be in triangular cylinder shapes with the side lengths and the thicknesses of 2-3mm, the processed cylinder and a steel alloy base body are welded under the vacuum degree being 1*10<-3>Pa at the temperature being 800 DEG C, and then the laser processing is performed, so that the superhard alloy cutter in which the radius of the circular arc of the knife point is 0.4-0.8mm is obtained.

Provided is a carbon-based material having high catalytic activity. This carbon-based material comprises a graphene doped with a metal atom and at least one type of non-metallic atom selected from a nitrogen atom, a boron atom, a sulfur atom, and a phosphorous atom. The ratio, for the carbon-based material, between the maximum peak intensity derived from an inactive metal compound and a metal crystal, and the (002) surface peak intensity in a rocking curve obtained by x-ray diffraction measurement using a CuKalpha ray is no more than 0.1.

In one embodiment, the invention is a system for initiating free radical polymerization comprising: a) in one part, one or more amido-borate compounds containing one or more anionic amido-borate moieties comprising an organoborate wherein the boron atom is bonded to a nitrogen atom of ammonia or an organic compound containing one or more nitrogen atoms, such as a hydrocarbyl amine, a hydrocarbyl polyamine, or an aromatic heterocycle containing one or more nitrogen atoms and optionally containing one or more heteroatoms or heteroatom containing functional moieties, and one or more cationic counter ions and b) in a second part, a liberating compound which reacts with the nitrogen atom(s) bound to the boron atom(s) upon contact with the amido-borate to form an organoborane radical. In another embodiment, the invention is a two part polymerizable composition comprising in one part, one or more amido-borate compounds and in the second part, a liberating compound which reacts with the nitrogen atoms bound to the boron atom upon contact with the amido-borate to form an organoborane radical and one or more compounds capable of free radical polymerization. The first part may further comprise one or more compounds capable of free radical polymerization. This facilitates formulating compositions that have commercially desirable volumetric ratios of the two parts.

The invention provides a novel polycyclicaromatic compound, a polymer, a production method thereof, an application thereof, materials used for an organic element, an organic electroluminescent element, a display device, and an illuminating device. The above problem is solved by providing a novel polycyclic aromatic compound in which a plurality of aromatic rings are connected by boron atoms, oxygen atoms, or the like, thereby increasing the number of options for organic EL element materials, and also solved by providing a superior organic EL element using said novel polycyclic aromatic compound as an organic EL element material.