65 results about "Atomic density" patented technology

The present invention relates to an SERF (Spin-Exchange Relaxation-Free) atom magnetometer electron polarizability measurement device and method. A traditional method measures a Faraday rotation anglegenerated by penetrating an atomic chamber by a linear polarization laser to calculate and obtain an electron polarizability, and the method is easy to be influenced by atomic density errors and rotation angle detection errors and is limited in measurement precision. The method disclosed by the invention comprises the steps of: measuring a resonant frequency of an SERF atom magnetometer in a magnetic field with a known size, and employing the resonant frequency, the size of the magnetic field and the gyromagnetic ratio of electrons to calculate electron slowing factors in an SERF state so asto calculate the electron polarizability according to a function relation of the slowing factors and the electron polarizability. The measurement precision is dependent on the precision of the appliedmagnetic field and the measurement precision of the resonant frequency, and is not limited to the atomic density and rotation angle detection errors, and therefore, the SERF atom magnetometer electron polarizability measurement device and method are higher in precision compared to the prior art.

The invention discloses a diamond-cubic boron nitride type universal superhard cutter material, a cutter and a preparation method of the material. The material is characterized in that diamond and cubic boron nitride are used as raw materials, the pre-treatment and the forming are performed on the raw materials to obtain a blank; the blank assembled with a sintering unit is arranged in a high temperature and high pressure device, wherein the intensity of pressure is 7-25GPa, the temperature is 1000-2700 DEG C, the sintering solution strengthening lasts for 10s-30min, the sizes of obtained crystal grains are uniform, and interfaces of the crystal grains are tight and closed; the compact-structure diamond-cubic boron nitride type universal superhard cutter material which is high in atomic density, is in a three-dimensional network shape and has strong covalent bonds can be formed by boron atoms, carbon atoms and nitrogen atoms at the crystal interfaces between the diamond and the cubic boron nitride. The universal superhard material is processed into a cylinder with the same height; two ends of the cylinder are polished and finished and then are processed to be in triangular cylinder shapes with the side lengths and the thicknesses of 2-3mm, the processed cylinder and a steel alloy base body are welded under the vacuum degree being 1*10<-3>Pa at the temperature being 800 DEG C, and then the laser processing is performed, so that the superhard alloy cutter in which the radius of the circular arc of the knife point is 0.4-0.8mm is obtained.

The invention discloses a hybrid optical pumping spin exchange relaxation-free (SERF) atom magnetometer device and a density ratio optimization method thereof. The density ratio optimization method optimizes the alkali metal atomic density ratio of the magnetometer from the viewpoint of optical frequency shift suppression and improvement of signal stability of the magnetometer, and finally realizes the optimum alkali metal atomic density ratio which is insensitive to the pumping optical power and the pumping optical frequency fluctuation. Compared with a traditional single alkali metal SERF atom magnetometer, the hybrid optical pumping SERF atom magnetometer has the advantage of uniform atomic polarizability. Compared with a traditional mixed optical pumping SERF atom magnetometer, the hybrid optical pumping SERF atom magnetometer comprehensively considers the interaction and influence of alkali metal atomic density ratio, optical frequency shift, pumping optical power and pumping light frequency, and is a multi-physical-quantity coupling optimization method. The density ratio optimization method of the hybrid optical pumping SERF atom magnetometer can effectively improve signal stability of the SERF atom magnetometer.

A cathode material for a lithium secondary battery capable of stably suppressing manganese dissolution even under high temperature and voltage conditions is provided. Further, by using the cathode material for a lithium secondary battery, a lithium secondary battery excellent in a charge / discharge cycle profile at a high temperature and a secondary battery module equipped with the battery are provided. The cathode material for a lithium secondary battery comprises a lithium manganese composite oxide and a coating layer formed on the surface of the lithium manganese composite oxide. The coating layer includes an oxide compound or a fluoride compound each containing M (wherein, M is at least one element selected from the group of Mg, Al and Cu), and a phosphorous compound. An atomic density of M at the side of the lithium manganese composite oxide in the coating layer is higher than an atomic density of M at the side of a surface layer of the coating layer facing to the electrolyte.

A complementary semiconductor device includes a semiconductor substrate, a first semiconductor region formed on a surface of the semiconductor substrate, a second semiconductor region formed on the surface of the semiconductor substrate apart from the first semiconductor region, an n-MIS transistor having a first gate insulating film including La and Al, formed on the first semiconductor region, and a first gate electrode formed on the gate insulating film, and a p-MIS transistor having a second gate insulating film including La and Al, formed on the second semiconductor region, and a second gate electrode formed on the gate insulating film, an atomic density ratio Al / La in the second gate insulating film being larger than an atomic density ratio Al / La in the first gate insulating film.

The invention discloses a construction method of a 3D micro / nano structure, which comprises the following steps: (1) fixing a material source on a substrate, and carrying out vacuumizing; (2) focusingthe focus of the electron beam at a place having a distance of 0-100nm away from the surface of the material source in the step (1) to form an interface local area containing the focus of the electron beam and surface layer atoms; and (3) controlling the focus of the electron beam to move point by point according to the designed 3D micro / nano structure to achieve the construction of the 3D micro / nano structure. According to the construction method of the present invention, focusing electron beam focus heat radiation is used for regulating material source surface layer atoms; the surface atomkinetic energy is increased; the constraint of surface energy is overcome, and the atons escape from the surface; and meanwhile, surface layer atoms of a material source are diffused to a low-densityarea due to the imbalance of the atomic density of an interface local area and the potential energy difference, so that the real-time construction of a three-dimensional structure under a micro / nano scale is achieved, the fusion development of a nano technology and 3D printing is promoted, and the application and popularization values are relatively good.

The invention relates to a method for simulating the influence of a heating technology on premelting and melting of crystal boundaries by the aid of a crystal phase-field process, and belongs to the field of technologies for simulating crystals. The method includes steps of (1), building a crystal phase-field model, in other words, building the crystal phase-field model on the basis of an idea of the traditional phase-field process, introducing a periodic function form into the model, and setting periodic partial-time average atomic densities as order parameters to obtain a free energy function expression of crystals; (2), determining a numerical process and calculation parameters. The method has the advantages that premelting and melting microstructure morphology at different heating rates is researched by the aid of a simulated calculation process and the crystal phase-field process, the widths of liquid-phase films at the crystal boundaries are quantitatively calculated by an excess mass process when the crystal boundaries are premelted and melted at the different heating rates, accordingly, the widths of the liquid-phase films at the crystal boundaries are quantified when the crystal boundaries are premelted and melted, structural relations among numerical values of the widths of the liquid-phase films and the atomic crystal boundary structures are illustrated, and an effect is perfect.

The invention discloses a spectrum detection method and system for the fluorine atom density in a plasma etching process. The spectrum detection method and system have the advantages of no electron temperature influence, high accuracy, capability of being widely applied to various etching process conditions and the like. The method comprises the following steps: introducing argon gas with the known density into an etching reaction cavity containing fluorine atoms; detecting the intensity of two atomic emission spectral lines which are approximately same in excitation threshold energy and correspond to fluorine atoms and argon atoms respectively; calculating the fluorine atom density n[F] according to the intensity of the two atomic emission spectral lines of the fluorine atoms and the argon atoms by a calculation formula described in the specification, wherein in the formula, Q[F] represents the speed coefficient of the electron impact excited ground-state fluorine atoms, Q[Ar] represents the speed coefficient of the electron impact excited ground-state argon atoms, Q[Ar] / Q[F] is known physical quantity, I[F] is the corresponding spectral line intensity of the fluorine atoms, I[Ar] is the corresponding spectral line intensity of the argon atoms, and n[Ar] is the ground-state argon atom density.

The invention discloses a single-beam SERF atom magnetometer and an alkali metal atom density measurement method, and the method comprises the following steps: firstly, compensating the magnetic field intensity of the center position of the single-beam SERF atom magnetometer in three directions to zero, and heating an alkali metal gas chamber to enable alkali metal atoms to reach an SERF state; then applying a constant direct-current magnetic field along the direction of one sensitive axis, applying a bias magnetic field with modulation and a bias magnetic field which continuously changes and crosses a zero point along the direction of the other sensitive axis, and recording an output signal of the magnetometer to obtain a magnetic field resonance curve with a dispersion line type; further obtaining the magnetic field resonance line width under different direct-current magnetic fields along the X-axis direction; obtaining the relation between the magnetic field resonance line width and the direct-current magnetic field size through quadratic function fitting; and finally, calculating the alkali metal atomic density by using the quadratic term coefficient of the quadratic function, so that the in-situ measurement of the alkali metal atomic density is realized.