49results about How to "Increased tensile strain" patented technology

By forming a tensile silicon dioxide layer on the basis of a sub-atmospheric deposition technique, the strain-inducing mechanism of a tensile contact etch stop layer for N-channel transistors may be significantly improved. Consequently, for otherwise identical stress conditions, the performance of a respective N-channel transistor may be significantly enhanced.

The present invention relates to a high performance heterojunction bipolar transistor (HBT) having a base region with a SiGe-containing layer therein. The SiGe-containing layer is not more than about 100 nm thick and has a predetermined critical germanium content. The SiGe-containing layer further has an average germanium content of not less than about 80% of the predetermined critical germanium content. The present invention also relates to a method for enhancing carrier mobility in a HBT having a SiGe-containing base layer, by uniformly increasing germanium content in the base layer so that the average germanium content therein is not less than 80% of a critical germanium content, which is calculated based on the thickness of the base layer, provided that the base layer is not more than 100 nm thick.

The invention proposes a conductive large-strain carbon nanotube composite film as well as a preparation method and a test method thereof. The preparation method comprises the following steps: step (1) preparing single-walled carbon nanotube films by a chemical vapor deposition method; step (2) collecting the single-walled carbon nanotube films prepared in the step (1) by a rotating drum wheel, immersing the drum wheel in a composite solution while collecting the single-walled carbon nanotube films, superimposing the single-walled carbon nanotube films and the composite solution one by one toform a composite film on the single-walled carbon nanotube films, and preparing a single-walled carbon nanotube composite film along with the rotation of the drum wheel; and step (3) taking out the drum wheel with the single-walled carbon nanotube composite film in the step (2) from the composite solution, then rotating to make the composite film uniform, and then drying. According to the invention, problems of small tensile strain and poor toughness of the single-walled carbon nanotube composite film in the prior art are solved.

An exemplary embodiment relates to a method for forming a metal oxide semiconductor field effect transistor (MOSFET). The method includes providing a substrate having a gate formed above the substrate and performing at least one of the following depositing steps: depositing a spacer layer and forming a spacer around a gate and gate insulator located above a layer of silicon above the substrate; depositing an etch stop layer above the spacer, the gate, and the layer of silicon; and depositing a dielectric layer above the etch stop layer. At least one of the depositing a spacer layer, depositing an etch stop layer, and depositing a dielectric layer comprises high compression deposition which increases in tensile strain in the layer of silicon.

The present disclosure describes methods for preparing semiconductor structures, comprising forming a Ge1-ySny buffer layer on a semiconductor substrate and forming a tensile strained Ge layer on the Ge1-ySny buffer layer using an admixture of (GeH3)2CH2 and Ge2H6 in a ratio of between 1:10 and 1:30. The disclosure further provides semiconductor structures having highly strained Ge epilayers (e.g., between about 0.15% and 0.45%) as well as compositions comprising an admixture of (GeH3)2CH2 and Ge2H6 in a ratio of between about 1:10 and 1:30. The methods herein provide, and the semiconductor structure provide, Ge epilayers having high strain levels which can be useful in semiconductor devices for example, in optical fiber communications devices.

The present invention introduces a concept of “smart” ribbons, which use functionally tensioned optical fibers during the manufacture of fiber optic ribbons to create fiber ribbons with controlled geometrical configuration, optimized strain distribution and reduced attenuation. The ribbons may have flat or bowed cross section and be straight along the length or curved in its plane, or twisted unidirectionally, or periodically. These shapes and residual stress-strain state are induced and controlled by using tension functions instead of traditional constant-value tension per fiber during the ribbon manufacture. Further, the present invention reduces signal loss and / or attenuation in ribbon fibers caused by an increase in the strain variation from tensile strain to compressive strain along the length of the individual fibers when ribbons are manufactured, stacked, stranded around a strength member or twisted and bent during cable installation. In a first embodiment of the present invention, either a symmetric or non-symmetric load distribution is applied across the fibers being placed or drawn into a ribbon structure to eliminate or control residual twist in a completed fiber ribbon. Additionally, in the present invention, the load distribution on the fibers of a ribbon can be varied (e.g. periodically changed) along the length of the ribbon to provide a ribbon with the required design characteristics for any particular application. In a second embodiment of the invention, a fiber optic ribbon is made up of a plurality of sub-unit ribbons arranged in substantially the same plane. Each sub-unit ribbon includes a plurality of optical fibers coated by sub-unit matrices.

The present invention provides semiconductor structures and a method of fabricating such structures for application of MOSFET devices. The semiconductor structures are fabricated in such a way so that the layer structure in the regions of the wafer where n-MOSFETs are fabricated is different from the layer structure in regions of the wafers where p-MOSFETs are fabricated. The structures are fabricated by first forming a damaged region with a surface of a Si-containing substrate by ion implanting of a light atom such as He. A strained SiGe alloy is then formed on the Si-containing substrate containing the damaged region. An annealing step is then employed to cause substantial relaxation of the strained SiGe alloy via a defect initiated strain relaxation. Next, a strained semiconductor cap such as strained Si is formed on the relaxed SiGe alloy.

The invention discloses a hydrogel vascular embolism material and a shape memory embolism treatment method. The hydrogel vascular embolization material is obtained by free radical copolymerization ofa hydrophobic monomer containing a benzene ring, a hydrophilic monomer capable of forming an intermolecular hydrogen bond and a cross-linking agent, the hydrogel vascular embolization material is formed by crosslinking physical crosslinking points formed by hydrophobic association and hydrogen bond interaction and covalent crosslinking points generated by chemical crosslinking. The vascular embolism material can achieve the purpose of vascular embolism, has excellent mechanical properties, and has the characteristics of relatively high breaking strain and breaking stress, excellent fatigue resistance, excellent resilience and the like.

The present invention relates to a high performance heterojunction bipolar transistor (HBT) having a base region with a SiGe-containing layer therein. The SiGe-containing layer is not more than about 100 nm thick and has a predetermined critical germanium content. The SiGe-containing layer further has an average germanium content of not less than about 80% of the predetermined critical germanium content. The present invention also relates to a method for enhancing carrier mobility in a HBT having a SiGe-containing base layer, by uniformly increasing germanium content in the base layer so that the average germanium content therein is not less than 80% of a critical germanium content, which is calculated based on the thickness of the base layer, provided that the base layer is not more than 100 nm thick.

A multilayer film comprises at least 3 layers including a first outer layer, a second outer layer and between the first and second outer layers at least one core layer. The first and second outer layers each comprise at least 75 weight percent of (a) at least one high impact polystyrene component. The core layer(s) comprises(s) (b) at least one styrene block copolymer that is present at a concentration of at least about 2 weight percent of the polymers in the film; and polymers (a), (b) and (c) at least one general purpose polystyrene having a Mw of more than 200,000 and 350,000 or less and that is present at a concentration of at least about 10 wt. % and up to at most about 50 wt. % of the polymers in the composition account for 100 percent by weight of the polymers in the polymer composition excluding polymeric additives.