Disclosed is a method of fabricating a
thin film transistor in which, in order to control the concentration of
metal catalysts remaining on a
polycrystalline silicon layer when an
amorphous silicon layer formed on an insulating substrate is crystallized into the
polycrystalline silicon layer by a super grain
silicon (SGS)
crystallization method, the substrate is annealed so that a very small amount of
metal catalyst is adsorbed or diffused into a capping layer, and then a
crystallization process is carried out, thereby minimizing the concentration of the
metal catalysts remaining on the
polycrystalline silicon layer, as well as forming a thick
metal catalyst layer. The method includes preparing an insulating substrate; sequentially forming an
amorphous silicon layer, a capping layer, and a
metal catalyst layer on the substrate; first annealing the substrate to adsorb or diffuse metal catalysts into the capping layer; removing the
metal catalyst layer; second annealing the substrate to crystallize the
amorphous silicon layer into a polycrystalline
silicon layer by means of the metal catalyst; and removing the capping layer. Thus, with the method of fabricating the
thin film transistor of the present invention, it is possible to minimize the concentration of the metal catalysts remaining on the polycrystalline
silicon layer, as well as to form a thick metal catalyst layer.