1365 results about "Near ultraviolet" patented technology

A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN / GaN violet and near-ultraviolet light emitting diodes and laser diodes.

A dental CAD / CAM device capable of accurately forming a dental coating is provided. The device includes: an intraoral-site measurement section 100 configured to measure 3D shape data on an intraoral site 130 with an OCT probe 150 for obtaining a tomogram of an object using near-ultraviolet light; a treatment-target-tooth 3D shape data acquisition section 200 configured to acquire shape data of a treatment target tooth from 3D shape data obtained by the intraoral-site measurement section 100; and a coating object 3D shape data creation section 300 configured to create 3D shape data on a dental coating such that the dental coating matches the 3D shape data of the treatment target tooth obtained by the treatment target tooth 3D shape data acquisition section 200.

To provide a phosphor having a broad emission spectrum in a range of blue color (peak wavelength from 400 nm to 500 nm), having a broad and flat excitation band in the range of near ultraviolet / ultraviolet, and having excellent emission efficiency and emission intensity / luminance. The phosphor is expressed by a general composition formula MmAaBbOoNn:Z (where element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element acting as an activator.), satisfying 5.0<(a+b) / m<9.0, 0≦a / m≦2.0, 0≦o<n, n=2 / 3m+a+4 / 3b−2 / 3o, and having an emission spectrum with a maximum peak wavelength from 400 nm to 500 nm under an excitation of the light in a wavelength range from 350 nm to 430 nm.

A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN / GaN violet and near-ultraviolet light emitting diodes and laser diodes.

A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

The invention discloses a perovskite type electroluminescence device. The device comprises a substrate, a cathode, an electronic transmission-hole blocking layer, a luminescent layer, a hole transmission-electron blocking layer and an anode, wherein the luminescent layer is made of a material of a perovskite structure; the structure of the device can effectively promote injection and transmission of the charge carriers, restrict the sufficient recombination luminescence of the charge carriers / excitons, and adjust the emission color from the near ultraviolet light band, the visible light band to the near-infrared band by means of changing the components of the luminescent material. The electroluminescence device provided by the invention is high in efficiency, low in turn-on voltage, excellent in color saturation and stable in spectrum changed along with the voltage, meanwhile, the perovskite type electroluminescence device is simple in process, low in cost and is suitable for being widely used in the products of the display and illumination field, in particular suitable for the large-sized industrial production of the high-performance electroluminescence devices with low cost and flexible substrate.

To provide a phosphor having an emission spectrum with a broad peak in a range of blue color (peak wavelength range from 400 nm to 500 nm) and a broad and flat excitation band in a range of near ultraviolet / ultraviolet, and having an excellent emission efficiency and emission intensity / luminance, a manufacturing method of the same, and a light emitting device using the phosphor. The phosphor is provided, which is given as a general composition formula expressed by MmAaBbOoNn:Z, (where element M is the element having bivalent valency, element A is the element having tervalent valency, element B is the element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element acting as an activator.), satisfying 5.0<(a+b) / m<9.0, 0≦a / m≦2.0, 0≦o<n, and n=2 / 3m+a+4 / 3b−2 / 3o, and having an emission spectrum with a maximum peak wavelength from 400 nm to 500 nm under an excitation of the light in a wavelength range from 350 nm to 430 nm.

To provide a phosphor emitting green fluorescence and having such superior characteristics as excellent conversion efficiency of blue light or near-ultraviolet light and excellent color purity,a phosphor satisfying the following conditions (i) to (v):(i) the wavelength of emission peak thereof is 510 nm or longer and 542 nm or shorter, when excited with light of 400 nm or 455 nm(ii) the full width at half maximum of emission peak thereof is 75 nm or narrower, when excited with light of 400 nm or 455 nm,(iii) the external quantum efficiency, which is defined by the formula below, is 0.42 or larger, when excited with light of 400 nm or 455 nm,(external quantum efficiency)=(internal quantum efficiency)×(absorption efficiency)(iv) a part of its surface comprises substance containing oxygen, and(v) it contains a bivalent and trivalent metal element (MII element), and its molar ratio to the total bivalent elements is larger than 1% and smaller than 15%.

An object of the present invention is to provide a high-efficiency red light emitting phosphor and white light emitting phosphor for using in a display or lighting which high-efficiently emits light in combination with a light source which emits light in the region from near-ultraviolet light to visible light. The present invention relates to a phosphor having a crystal phase having a specified chemical composition.

A fluorescent conversion filter includes a fluorescent conversion film which facilitates converting light from a wavelength region between near ultraviolet and green to light in the red region which can be finely patterned. A color display device can be produced which includes the fluorescent conversion filter. The fluorescent conversion filter includes a fluorescent conversion film and a light absorption film on the display side surface of the flourescent conversion film. The flourescent conversion film has an absorbance of 1 or less in the wavelength region between 450 nm and 520 nm. The light absorption film has an absorbance of greater than I in the wavelength region between 450 nm and 520 nm. The fluorescent conversion film contains a photo-curing resin or a photo- and thermo-setting resin, that contains an acrylate polymer, a methacrylate polymer or an acrylate-methacrylate copolymer as its main component.

To provide a phosphor having an emission spectrum with a broad peak in a range from green color to yellow color, having a broad and flat excitation band capable of using lights of broad range from near ultraviolet / ultraviolet to blue lights as excitation lights, and having excellent emission efficiency and luminance. The problem is solved by providing the phosphor expressed by a general composition formula MmAaBbOoNn:Z (where element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is one or more kinds of elements acting as the activator.), satisfying 4.0<(a+b) / m<7.0, a / m≧0.5, b / a >2.5, n>o, n=2 / 3 m+a+4 / 3 b−2 / 3 o.

A display apparatus including an optical sensor in its peripheral region is intended to response to visible rays efficiently by preventing a malfunction due to the reaction of the optical sensor to near ultraviolet rays. For this purpose, a display apparatus that includes an active matrix substrate (2) having a pixel array region (8) in which a plurality of pixels are arranged on a base substrate (14) is configured as follows: an optical sensor (11) is provided in a peripheral region (9) located around the pixel array region (8); a color filter (22) for display is provided on the opposite side of TFTs (6) from the base substrate (14); and a color filter (23) for an optical sensor is provided on the opposite side of the optical sensor (11) from the base substrate (14).

To provide a green phosphor with high conversion efficiency of blue of near-ultraviolet light and excellent color purity, a multinary oxynitride phosphor represented by the general formula [I] is proposed.M1xBayM2zLuOvNw  [I]In the formula [I], M1 represents Cr, Mn, Fe, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb, M2 represents Sr, Ca, Mg and Zn, L represents metal elements belonging to the fourth group or the fourteenth group of the periodic table, and x, y, z, u, v and w are the numeric values in the following ranges:0.00001≦x≦30≦y≦2.999992.6≦x+y+z≦30<u≦116<v≦250<w≦17.

To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet / ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2 / 3m+a+4 / 3b−2 / 3o), and further containing boron and / or fluorine.