1374 results about "Near ultraviolet" patented technology

A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN / GaN violet and near-ultraviolet light emitting diodes and laser diodes.

A lighting device comprising one or more solid state light emitters which emit near ultraviolet light and one or more lumiphors which emit light having a wavelength in the range of from 490 nm to 555 nm, which in the absence of other light would produce a mixture of light within an area defined by x, y coordinates (0.32, 0.40), (0.36, 0.48), (0.43, 0.45), (0.42, 0.42), and (0.36, 0.38). The lighting device may further comprise one or more 600 nm to 630 nm light emitters, and a mixture of light emitted from the lighting device may be within ten MacAdam ellipses of the blackbody locus. Also, packaged solid state light emitters and methods of lighting.

An apparatus and method for ultraviolet irradiation of air for the purpose of removing contaminants from that air is disclosed. A U-shaped ultraviolet bulb enshrouded within a quartz tube provides enhanced contaminant destruction characteristics. By combining a plurality of those bulbs in a chamber that is of polished aluminum, and further combining aluminum filters therewith, added irradiation enhancement is achieved. Further provided are baffles or baffling proximate the ultraviolet bulbs that cause the air to go turbulent thus drawing the air closer to the ultraviolet bulb and further enhancing the contaminant destruction characteristics. Moreover disclosed is treatment of substrates with a chemical agent that facilitates the arrest of contaminants from the air onto the substrate for further irradiation of the contaminants from the bulbs. This further irradiation breaks down the arrested contaminants thus providing the substrate with a self-cleansing effect.

A light-emitting planar body-structured body characterized in that it comprises an LED (light-emitting diode) light source which radiates ultraviolet radiation or near ultraviolet radiation and a planar body provided disposed in front thereof, and that the planar body is a light-transmitting resin molding containing dispersed therein at least one type of phosphors and light-storing bodies together with light-transmitting inorganic particles.

A dental CAD / CAM device capable of accurately forming a dental coating is provided. The device includes: an intraoral-site measurement section 100 configured to measure 3D shape data on an intraoral site 130 with an OCT probe 150 for obtaining a tomogram of an object using near-ultraviolet light; a treatment-target-tooth 3D shape data acquisition section 200 configured to acquire shape data of a treatment target tooth from 3D shape data obtained by the intraoral-site measurement section 100; and a coating object 3D shape data creation section 300 configured to create 3D shape data on a dental coating such that the dental coating matches the 3D shape data of the treatment target tooth obtained by the treatment target tooth 3D shape data acquisition section 200.

To provide a phosphor having a broad emission spectrum in a range of blue color (peak wavelength from 400 nm to 500 nm), having a broad and flat excitation band in the range of near ultraviolet / ultraviolet, and having excellent emission efficiency and emission intensity / luminance. The phosphor is expressed by a general composition formula MmAaBbOoNn:Z (where element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element acting as an activator.), satisfying 5.0<(a+b) / m<9.0, 0≦a / m≦2.0, 0≦o<n, n=2 / 3m+a+4 / 3b−2 / 3o, and having an emission spectrum with a maximum peak wavelength from 400 nm to 500 nm under an excitation of the light in a wavelength range from 350 nm to 430 nm.

To provide a phosphor having a broad emission spectrum with a peak in the range from yellow color to red color (wavelength from 570 nm to 620 nm), having a flat excitation band with large area on the long wavelength side from near ultraviolet / ultraviolet to green color (wavelength from 250 nm to 550 nm), and excellent in emission intensity and luminance, and a method of manufacturing the same, and also a light source such as white LED using the phosphor. As raw materials, Ca3N2(2N), AlN(3N), Si3N4(3N), and Eu2O3(3N) are prepared, and out of each raw material, 0.950 / 3 mol of Ca3N2. 2 mol of AlN, 4 / 3 mol of Si3N4, and 0.050 / 2 mol of Eu2O3 are weighed, and the raw materials thus weighed are mixed by using a mortar. The raw materials thus mixed are put in a BN crucible, and retained / fired for 3 hours at 1700° C. in a nitrogen atmosphere, and thereafter cooled from 1700° C. to 200° C., to thereby obtain the phosphor expressed by a composition formula Ca0.950Al2Si4O0.075N7.917:Eu0.050.

A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN / GaN violet and near-ultraviolet light emitting diodes and laser diodes.

To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet / ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2 / 3m+a+4 / 3b−2 / 3o), and further containing boron and / or fluorine.

A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

A light-emitting device is provided, which includes a package having a first portion and a second portion surrounding it, a semiconductor light-emitting element mounted on the first portion and emitting a light having an emission peak in a near-ultraviolet region, a transparent resin layer covering the semiconductor light-emitting element and contacted with the package, and a laminated body formed on the transparent resin layer with end faces of the laminated body being contacted with the second portion. The transparent resin layer has an arch-like outer profile perpendicular cross section. The laminated body has an arch-like outer profile in perpendicular cross section and comprises a red fluorescent layer, a yellow fluorescent layer, a green fluorescent layer and a blue fluorescent layer laminated in the mentioned order. The yellow fluorescent layer has a top portion which is made larger in thickness than that of the end face portions thereof.

The invention discloses a perovskite type electroluminescence device. The device comprises a substrate, a cathode, an electronic transmission-hole blocking layer, a luminescent layer, a hole transmission-electron blocking layer and an anode, wherein the luminescent layer is made of a material of a perovskite structure; the structure of the device can effectively promote injection and transmission of the charge carriers, restrict the sufficient recombination luminescence of the charge carriers / excitons, and adjust the emission color from the near ultraviolet light band, the visible light band to the near-infrared band by means of changing the components of the luminescent material. The electroluminescence device provided by the invention is high in efficiency, low in turn-on voltage, excellent in color saturation and stable in spectrum changed along with the voltage, meanwhile, the perovskite type electroluminescence device is simple in process, low in cost and is suitable for being widely used in the products of the display and illumination field, in particular suitable for the large-sized industrial production of the high-performance electroluminescence devices with low cost and flexible substrate.

To provide a phosphor having an emission spectrum with a broad peak in a range of blue color (peak wavelength range from 400 nm to 500 nm) and a broad and flat excitation band in a range of near ultraviolet / ultraviolet, and having an excellent emission efficiency and emission intensity / luminance, a manufacturing method of the same, and a light emitting device using the phosphor. The phosphor is provided, which is given as a general composition formula expressed by MmAaBbOoNn:Z, (where element M is the element having bivalent valency, element A is the element having tervalent valency, element B is the element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element acting as an activator.), satisfying 5.0<(a+b) / m<9.0, 0≦a / m≦2.0, 0≦o<n, and n=2 / 3m+a+4 / 3b−2 / 3o, and having an emission spectrum with a maximum peak wavelength from 400 nm to 500 nm under an excitation of the light in a wavelength range from 350 nm to 430 nm.

This invention provides a heat curable resin composition for light reflection, which, after curing, can realize high reflectance in a range of visible light to near ultraviolet light, has excellent heat deterioration resistance and tablet moldability, and is less likely to cause burrs during transfer molding, and a process for producing the resin composition, and an optical semiconductor element mounting substrate and an optical semiconductor device using the resin composition. The heat curable resin composition for light reflection comprises a heat curable component and a white pigment and is characterized in that the length of burrs caused upon transfer molding under conditions of molding temperature 100° C. to 200° C., molding pressure not more than 20 MPa, and molding time 60 to 120 sec is not more than 5 mm and the light reflectance after heat curing at a wavelength of 350 nm to 800 nm is not less than 80%. The resin composition can be used for constructing the optical semiconductor element mounting substrate and the optical semiconductor device.

To provide a phosphor emitting green fluorescence and having such superior characteristics as excellent conversion efficiency of blue light or near-ultraviolet light and excellent color purity,a phosphor satisfying the following conditions (i) to (v):(i) the wavelength of emission peak thereof is 510 nm or longer and 542 nm or shorter, when excited with light of 400 nm or 455 nm(ii) the full width at half maximum of emission peak thereof is 75 nm or narrower, when excited with light of 400 nm or 455 nm,(iii) the external quantum efficiency, which is defined by the formula below, is 0.42 or larger, when excited with light of 400 nm or 455 nm,(external quantum efficiency)=(internal quantum efficiency)×(absorption efficiency)(iv) a part of its surface comprises substance containing oxygen, and(v) it contains a bivalent and trivalent metal element (MII element), and its molar ratio to the total bivalent elements is larger than 1% and smaller than 15%.

A fluorescence conversion medium comprising, a fluorescent fine particle formed of an inorganic nanocrystal which absorbs visible and / or near ultraviolet light and emits visible fluorescence, and a transparent medium which disperses the fluorescent fine particle therein, an absorbance at a wavelength where the fluorescent intensity is maximized being in the range of 0.1 to 1.

A fluorescent conversion filter includes a fluorescent conversion film which facilitates converting light from a wavelength region between near ultraviolet and green to light in the red region which can be finely patterned. A color display device can be produced which includes the fluorescent conversion filter. The fluorescent conversion filter includes a fluorescent conversion film and a light absorption film on the display side surface of the flourescent conversion film. The flourescent conversion film has an absorbance of 1 or less in the wavelength region between 450 nm and 520 nm. The light absorption film has an absorbance of greater than I in the wavelength region between 450 nm and 520 nm. The fluorescent conversion film contains a photo-curing resin or a photo- and thermo-setting resin, that contains an acrylate polymer, a methacrylate polymer or an acrylate-methacrylate copolymer as its main component.

To provide a phosphor having a broad emission spectrum in a range of blue color (in a peak wavelength range from 400 nm to 500 nm), having a broad flat excitation band in a near ultraviolet / ultraviolet range, and having excellent emission efficiency and emission intensity / luminance. The phosphor is given as a general composition formula expressed by MmAaBbOoNn:Z, (where element M is the element having bivalent valency, element A is the element having tervalent valency, element B is the element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element acting as an activator), satisfying 5.0<(a+b) / m<9.0, 0≦a / m≦2.0, 0≦o≦n, n=2 / 3m+a+4 / 3b−2 / 3o, and has an emission spectrum with a maximum peak in the wavelength range from 400 nm to 500 nm under an excitation of the light in a wavelength range from 250 nm to 430 nm.

A high boiling-point solvent, included in a fluorescent color conversion film, suppresses degradation in color conversion characteristic by compensating for a decrease in dielectric constant due to solidification of the matrix system. The fluorescent color conversion film of the present invention includes, in addition to the high boiling point solvent, organic fluorescent dyes, which absorb light in a near ultraviolet to visible light region and emit visible light of a different wavelength, and a matrix resin bearing the organic fluorescent dye. The high boiling point solvent has a boiling point of 150° C. or higher and a vapor pressure of 5 mmHg or lower at the temperature of 20° C. The fluorescent color conversion film is useful in a fluorescent color conversion filter, which itself is useful in light-emitting devices, such as self-emitting multi-colored- or full colored-displays, display panels and backlights.

A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN / GaN violet and near-ultraviolet light emitting diodes and laser diodes.

To provide a phosphor having an emission spectrum with a broad peak in a range from green color to yellow color, having a broad and flat excitation band capable of using lights of broad range from near ultraviolet / ultraviolet to blue lights as excitation lights, and having excellent emission efficiency and luminance. The problem is solved by providing the phosphor expressed by a general composition formula MmAaBbOoNn:Z (where element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is one or more kinds of elements acting as the activator.), satisfying 4.0<(a+b) / m<7.0, a / m≧0.5, b / a >2.5, n>o, n=2 / 3 m+a+4 / 3 b−2 / 3 o.

Biosensors are disclosed based on one- or two-dimensional photonic-crystal reflectance filters operating at near-ultraviolet wavelengths. Rigorous Coupled-Wave Analysis simulations predict a more tightly confined resonant electric field at the surface of this biosensor as compared to previously fabricated near-infrared photonic-crystal biosensors. This change in the resonant electric field provides an improvement of over 4.5 times in the surface-sensitivity to bulk-sensitivity ratio, and therefore enables enhanced detection resolution for biomolecules adsorbed on the biosensor surface. These new biosensors can be fabricated in mass by replica molding. They are especially well suited for applications requiring the detection of small molecules or ultra-low analyte concentrations.

To provide a phosphor for manufacturing an one chip type LED illumination, etc, by combining a near ultraviolet / ultraviolet LED and a blue LED, and having an excellent emission efficiency including luminance. The phosphor is given as a general composition formula expressed by MmAaBbOoNn:Z, (where element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is one or more kinds of elements acting as an activator.), satisfying a=(1+x)×m, b=(4−x)×m, o=x×m, n=(7−x)×m, 0≦x≦1, wherein when excited by light in a wavelength range from 300 nm to 500 nm, the phosphor has an emission spectrum with a peak wavelength in a range from 500 nm to 620 nm.

A general-use white color reflecting material, and a process for production thereof are provided. The white color reflecting material, without troublesome surface treatment such as formation of a reflective layer by plating, is capable of reflecting a near-ultraviolet ray of a wavelength region of 380 nm or longer or a near-infrared ray sufficiently without light leakage; does not become yellow even when exposed to near-ultraviolet rays; has excellent lightfastness, heat resistance, and weatherability; has high mechanical strength and chemical stability; is capable of maintaining a high degree of whiteness; and is easily moldable at a low cost. Further a white color reflecting material used as an ink composition for producing the white color reflecting material in a film shape is also provided. The white color reflecting material comprises; a silicone resin or silicone rubber formed from titanium oxide-containing silicone composition, in which anatase-type or rutile-type titanium oxide particles are dispersed.

A display apparatus including an optical sensor in its peripheral region is intended to response to visible rays efficiently by preventing a malfunction due to the reaction of the optical sensor to near ultraviolet rays. For this purpose, a display apparatus that includes an active matrix substrate (2) having a pixel array region (8) in which a plurality of pixels are arranged on a base substrate (14) is configured as follows: an optical sensor (11) is provided in a peripheral region (9) located around the pixel array region (8); a color filter (22) for display is provided on the opposite side of TFTs (6) from the base substrate (14); and a color filter (23) for an optical sensor is provided on the opposite side of the optical sensor (11) from the base substrate (14).

To provide a green phosphor with high conversion efficiency of blue of near-ultraviolet light and excellent color purity, a multinary oxynitride phosphor represented by the general formula [I] is proposed. <?in-line-formulae description="In-line Formulae" end="lead"?>M1xBayM2zLuOvNw [I]<?in-line-formulae description="In-line Formulae" end="tail"?> In the formula [I], M1 represents Cr, Mn, Fe, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb, M2 represents Sr, Ca, Mg and Zn, L represents metal elements belonging to the fourth group or the fourteenth group of the periodic table, and x, y, z, u, v and w are the numeric values in the following ranges: <?in-line-formulae description="In-line Formulae" end="lead"?>0.00001<=x<=3<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>0<=y<=2.99999<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>2.6<=x+y+z<=3<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>0<u<=11<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>6<v<=25<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>0<w<=17.<?in-line-formulae description="In-line Formulae" end="tail"?>

To provide a phosphor having an emission spectrum with a broad peak in a range from green color to yellow color, having a broad and flat excitation band capable of using lights of broad range from near ultraviolet / ultraviolet to blue lights as excitation lights, and having excellent emission efficiency and luminance. The problem is solved by providing the phosphor expressed by a general composition formula MmAaBbOoNn:Z (where element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is one or more kinds of elements acting as the activator.), satisfying 4.0<(a+b) / m<7.0, a / m=0.5, b / a>2.5, n>o, n=2 / 3m+a+4 / 3b−2 / 3o, and having an emission spectrum with a peak wavelength of 500 nm to 650 nm when excited by light in a wavelength range from 300 nm to 500 nm.

A light emitting device related to the present invention, which has a semiconductor light emitting element and a phosphor which converts a part of the luminescence spectrum emitted from the semiconductor light emitting element, characterized in that the luminescence spectrum of the semiconductor light emitting element is located between a near ultraviolet region and a short-wavelength visible region, and the phosphor is made by adding a red luminescent activator to a base material of a blue luminescent phosphor, thereby improving the color shading generated by the dispersion of the spectra of the light emitting elements and obtaining the light emitting device having a high brightness and a good color rendering properties. With this, it is possible to provide the light sources for the lighting apparatus of medical treatments, the flash plate of a copying machine, etc., in which a good color rendering property is required.

To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet / ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2 / 3m+a+4 / 3b−2 / 3o), and further containing boron and / or fluorine.