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60results about How to "Broad emission spectrum" patented technology

Broadband light emitting device

The invention concerns a superluminescent light emitting diode (SLED) comprising a semiconductor heterostructure forming a PN junction and a waveguide. The semiconductor heterostructure includes a gain region with a contact means for biasing the PN junction so as to produce light emission including stimulated emission from an active zone of the gain region, and in the active zone a plurality of quantum dot layers, each quantum dot layer made up of a plurality of quantum dots and a plurality of adjoining layers, each adjoining layer adjacent to one of said quantum dot layers. The material composition or a deposition parameter of at least two adjoining layers is different. This ensures an enhanced emission spectral width.
Owner:EXALOS

Phosphor and manufacturing method of the same, and light emitting device using the phosphor

To provide a phosphor having a broad emission spectrum in a range of blue color (peak wavelength from 400 nm to 500 nm), having a broad and flat excitation band in the range of near ultraviolet / ultraviolet, and having excellent emission efficiency and emission intensity / luminance. The phosphor is expressed by a general composition formula MmAaBbOoNn:Z (where element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element acting as an activator.), satisfying 5.0<(a+b) / m<9.0, 0≦a / m≦2.0, 0≦o<n, n=2 / 3m+a+4 / 3b−2 / 3o, and having an emission spectrum with a maximum peak wavelength from 400 nm to 500 nm under an excitation of the light in a wavelength range from 350 nm to 430 nm.
Owner:MITSUBISHI CHEM CORP

Broadband light emitting device

The invention concerns a superluminescent light emitting diode (SLED) comprising a semiconductor heterostructure forming a PN junction and a waveguide. The semiconductor heterostructure includes a gain region with a contact means for biasing the PN junction so as to produce light emission including stimulated emission from an active zone of the gain region, and in the active zone a plurality of quantum dot layers, each quantum dot layer made up of a plurality of quantum dots and a plurality of adjoining layers, each adjoining layer adjacent to one of said quantum dot layers. The material composition or a deposition parameter of at least two adjoining layers is different. This ensures an enhanced emission spectral width.
Owner:EXALOS

Phosphor and manufacturing method therefore, and light emission device using the phosphor

To provide a phosphor for manufacturing an one chip type LED illumination, etc, by combining a near ultraviolet / ultraviolet LED and a blue LED, and having an excellent emission efficiency including luminance. The phosphor is given as a general composition formula expressed by MmAaBbOoNn:Z, (where element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is one or more kinds of elements acting as an activator.), satisfying a=(1+x)×m, b=(4−x)×m, o=x×m, n=(7−x)×m, 0≦x≦1, wherein when excited by light in a wavelength range from 300 nm to 500 nm, the phosphor has an emission spectrum with a peak wavelength in a range from 500 nm to 620 nm.
Owner:MITSUBISHI CHEM CORP

Phosphor and manufacturing method of the same, and light emitting device using the phosphor

To provide a phosphor having a broad emission spectrum in a range of blue color (peak wavelength from 400 nm to 500 nm), having a broad and flat excitation band in the range of near ultraviolet / ultraviolet, and having excellent emission efficiency and emission intensity / luminance. The phosphor is expressed by a general composition formula MmAaBbOoNn:Z (where element M is at least one or more kind of element having bivalent valency, element A is at least one or more kind of element having tervalent valency, element B is at least one or more kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is at least one or more kind of element acting as an activator.), satisfying 5.0<(a+b) / m<9.0, 0≦a / m≦2.0, 0≦o<n, n=2 / 3m+a+4 / 3b−2 / 3o, and having an emission spectrum with a maximum peak wavelength from 400 nm to 500 nm under an excitation of the light in a wavelength range from 350 nm to 430 nm.
Owner:MITSUBISHI CHEM CORP

Organometallic Iridium Complex, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device

To provide a long-lifetime organometallic iridium complex exhibiting yellow light emission with high emission efficiency as a novel substance. The organometallic iridium complex includes a ligand in which an unsubstituted phenyl group is bonded to each of the 2-position and the 5-position of pyrimidine. The organometallic iridium complex has a structure represented by General Formula (G1).
Owner:SEMICON ENERGY LAB CO LTD

Ultra-wideband and high-gain fiber and device fabrication technology

The invention relates to an ultra-wideband and high-gain fiber and device fabrication technology. The fabrication technology comprises the steps of (1) fabricating a gain fiber, wherein the gain fiberis a composite structure fiber, a fiber core is multiple groups of symmetrically-distributed fan-shaped structures or a plurality of concentric circular structures and comprises at least two different types of rare earth-doping glass, and a light-emitting center is arranged at different fan-shaped structure or circular structure regions in the fiber core; and (2) building a fiber laser, wherein the gain fiber is used, rare-earth ions in different regions in the fiber core are selectively simulated by controlling shapes of pumping light spots, and tunable laser output is achieved by combiningfiber grating. The design of the fiber structure and optical field distribution control of pumping light are combined, the fabricated gain fiber has the characteristics of high gain and ultra wideband, remaining heat generated by all-fiber core pumping is prevented by selectively simulating the light-emitting ions in a special region, and the fabrication technology can be used for a wideband-tunable single-frequency fiber laser and a high-repetition frequency locked-mode fiber laser.
Owner:SOUTH CHINA UNIV OF TECH

Rare earth doped fluorescent powder and synthetic method thereof and application of fluorescent powder in LED devices

The invention discloses rare earth doped fluorescent powder and a synthetic method thereof and application of the fluorescent powder in LED devices, and belongs to the technical field of luminescent materials. The general chemical formula of the fluorescent powder is MS[2-y]AyO[2+y]N[2-y-4z / 3]Cz:Rx. According to the compound, C<4-> is substituted for N<3->, due to the fact that the electronegativity of C is smaller than that of N, the electron cloud expansion effect of the C<4-> is more obvious than that of the N<3->, after doping is conducted, rare earth ion 5d energy level splitting is increased, Stokes shift can change, and fluorescence parameters such as fluorescent peal and full half-peak width of the powder change. By adjusting generation of the above-mentioned doped ions, fluorescent powder with different fluorescent light colors and quantum efficiency can be obtained. The invention further discloses the application of the fluorescent powder in the field of LED devices. The fluorescent powder is applied to white LED light fixtures or light-emitting components which take blue LED or purple LED as a light source and can help to increase the color rendering indexes of the devices.
Owner:BEIJING YUJI SCI & TECH +2

Ti (titanium)-doped gallium oxide crystal, as well as preparation method and application thereof

The invention relates to a Ti (titanium)-doped gallium oxide crystal, as well as a preparation method and application thereof. The molecular formula of the crystal is beta-(Ga1-xTix)2O3, x being lager than 0.0001 and less than 0.1. The crystal beta-(Ga1-xTix)2O3 is grown by adopting an edge-defined film-fed crystal growth method. Ti is adopted as an active ion, a fluorescence spectrum is positioned in a visible and near infrared bands, an emission spectrum is relatively broad, and the crystal is suitable for output of ultrafast laser of the band and output of tunable laser of a broadband. Compared with the prior art, the Ti-doped gallium oxide crystal has the advantages of high heat conductivity, low lattice distortion after doping of the Ti ion and capability of serving as an ultrafast laser and tunable laser gain medium.
Owner:SHANDONG UNIV

Quinoxaline derivative, and light-emitting element and light-emitting device using quinoxaline derivative

An object is to provide a novel organic compound capable of visible light emission. In particular, an object is to provide a novel organic compound that exhibits a broad emission spectrum when it is used for a light-emitting element. In addition, an object is to provide a light-emitting element and a light-emitting device that gives white light emission with an excellent color rendering property. The quinoxaline derivative represented by General Formula (1) is provided. Since the quinoxaline derivative represented by General Formula (1) is capable of emitting visible light, it can be favorably used for a light-emitting element. In particular, since the quinoxaline derivative represented by General Formula (1) exhibits a broad emission spectrum when it is used for a light-emitting element, by using it for a light-emitting element a light-emitting element that gives white light emission with an excellent color rendering property can be obtained.
Owner:SEMICON ENERGY LAB CO LTD

Transition metal ion concentration gradient doped zinc sulfide or zinc selenide and preparation method thereof

The invention discloses a transition metal ion concentration gradient doped zinc sulfide / zinc selenide and a preparation method thereof. The active ion of the laser material is one or more of transition metal ions Tm<2+>, Cr<2+>, Co<2+> and Fe<2+>, and the doping concentration of the transition metal ions on two end surfaces of the laser material is in exponential distribution from high to low and is 10<16>-10<20> ions / cm<3>. The material has the characteristics of wide absorption and emission bandwidth and large absorption and emission section, and can obtain ultra-short and ultra-fast laser output with high peak power. One end of the laser material with large doping concentration is attached to a heat sink, so that heat energy generated when incident light enters the laser gain material can be quickly taken away, thus the heat effect produced by laser is reduced, and efficient laser output is achieved.
Owner:SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI

Preparation method and application method of Cr<3+> doped near-infrared wide-spectrum luminescent material

The invention discloses a Cr<3+> doped near-infrared wide-spectrum luminescent material and a preparation method thereof, which belong to the technical field of near-infrared luminescent materials. The general chemical formula is Ca3Y2-xGe3O12: xCr<3+>, and x is greater than or equal to 0.01 mol% and less than or equal to 20 mol%. The near-infrared luminescent material belongs to a cubic crystal system and has a garnet type space crystal structure the same as Ca3Y2Ge3O12, the space group is Ia3d, Ca<2+> occupies dodecahedron octa-coordination, Y<3+> occupies octahedron hexa-coordination, and Ge<4+> occupies tetrahedron tetra-coordination. The material is wide in excitation spectrum, the optimal excitation wavelength ranges from 400 nm to 550 nm, and the emission wavelength ranges from 700nm to 1200 nm. The material is matched with a blue-light LED chip, can be used for manufacturing a wide-spectrum near-infrared light source, and is applied to the fields of plant illumination, biological probes, military affairs and the like. The method is simple in preparation process, low in raw material price and easy to synthesize.
Owner:UNIV OF SCI & TECH BEIJING

Tungstate LED (light-emitting diode) fluorescent powder and preparation method thereof

The invention discloses tungstate LED (light-emitting diode) fluorescent powder and a preparation method thereof. The preparation method comprises the following steps of: weighing raw materials according to a chemical expression Zn1-x-yWO4:Bi3+x,Eu3+y, wherein x is more than or equal to 0.005 and less than or equal to 0.05, y is more than 0 and less than or equal to 0.05; respectively dissolving compounds containing Bi<3+> and Eu<3+> into a bismuth nitrate solution and an europium nitrate solution, dissolving compounds containing Zn<2+> and WO4<2-> into respective solutions, mixing the bismuth nitrate solution, the europium nitrate solution and a zinc solution and then adding a tungstate solution, carrying out suction filtration on formed precipitate and drying the formed precipitate, grinding and calcining a made precursor, cooling to room temperature and then taking out the precursor, and grinding to obtain a tungstate LED fluorescent powder sample. The tungstate LED fluorescent powder has stronger absorption capacity in the range of 220-380nm and respectively has an emission peak in a blue light region, a green light region and an orange red region, and different light rays in different colours can be obtained by regulating ratio of Bi<3+> to Eu<3+> and changing excitation wavelength.
Owner:QINGDAO AGRI UNIV

Composite structure based on Ce: YAG (yttrium aluminum garnet) wafer and production method

The invention discloses a composite structure based on Ce: YAG (yttrium aluminum garnet) wafer. The composite structure comprises a Ce: YAG wafer and a red-light emitting layer fixed on the Ce: YAG wafer. The invention also discloses a production method for the composite structure based on the Ce: YAG wafer simultaneously, for forming an optical composite structure capable of realizing light emitting in a broadband from green light to red light. The composite structure and the production method are widely applied in the fields of detection equipment and illumination devices.
Owner:KUSN KAIWEI ELECTRONICS

Red luminescent material and preparation method and application thereof

The invention discloses a red luminescent material and a preparation method and application thereof. The red light-emitting material is selected from at least one of substances with a chemical generalformula as shown in a formula I: Gd<3-x>Mn<x>Al<4>Ga<12>, wherein x is greater than or equal to 0.001 and less than or equal to 0.5. The red luminescent material provided by the invention has wide excitation and emission spectrums and excellent luminescence property, can emit red light under excitation of ultraviolet light, near ultraviolet light and blue-green light, and can be applied to light-emitting diode (LED) plant illumination.
Owner:宁波市镇海中学 +1

Composite structure based on ce: yag wafer, and manufacturing method thereof

The invention discloses a composite structure based on a Ce:YAG wafer, comprising the Ce:YAG wafer and a red light emitting layer fixed on the Ce:YAG wafer. The invention further discloses a manufacturing method of the composite structure based on a Ce:YAG wafer, through which a composite optical structure capable of emitting light ranging from green light to red light is formed. The composite optical structure can be widely applied in the fields of detection equipment and illumination devices.
Owner:KUSN KAIWEI ELECTRONICS

Red fluorescence powder for laser medical-treatment illumination and preparation method and application thereof

The invention discloses red fluorescence powder for laser medical-treatment illumination and a preparation method and application thereof. The chemical formula of the red fluorescence powder is M1-x-zLixAl1-x-ySi1+x+yN3-yCy:zEu<2+> or M1-m+0.5n-pLimAl1-mSi1+mCnN3-n:pEu<2+>, wherein the x and the m are 0.01-0.3, the y and the n are 0.01-0.30, and the z and the p are 0.001-0.3. According to the preparation method of the red fluorescence powder for laser medical-treatment illumination, the fluorescence powder having good luminescence property is prepared by utilizing a high-temperature solid-state method and doping different atoms. In addition, the specific temperature is adopted for calcination, calcining reaction is performed at the temperature of 1500-1900 DEG C for 1-20 hours to enable components to be better bound together and to play excellent optical properties, and the red fluorescence powder is very suitable for manufacturing of medical-treatment illumination sources.
Owner:CHINA JILIANG UNIV

Reflective and Heat-Insulating QLED Package Device and Method for Packaging the Same as well as Luminaire

ActiveUS20210367126A1Improve excitation stabilityImprove reliabilitySolid-state devicesNanoopticsQuantum dotEngineering
A reflective and heat-insulating QLED package device and a method for packaging the same as well as a luminaire are provided. The reflective and heat-insulating QLED package device includes a substrate, a first LED chip for emitting blue light, a second LED chip for emitting green light, an adhesive layer for quantum dots, a reflecting layer for changing the path of light rays, and a heat-insulating layer. The first LED chip and the second LED chip are arranged on the substrate in a tiled manner. The heat-insulating layer is arranged on the light output surface of the first LED chip and the second LED chip, a reflecting layer covers the heat-insulating layer, and a reflecting substance or a refractive substance is uniformly distributed in the reflecting layer. The adhesive layer for quantum dots covers the reflecting layer and is covered by a moisture and oxygen blocking adhesive layer.
Owner:TIANJIN ZHONGHUAN ELECTRONICS LIGHTING TECH

Cerium-ion-doped silicate blue fluorescent powder and preparation method thereof

The invention provides cerium-ion-doped silicate blue fluorescent powder and a preparation method thereof. The chemical formula of the cerium-ion-doped silicate blue fluorescent powder is Sr2-xMgSi2O7:xCe<3+>, wherein x is more than or equal to 0.0001 and less than or equal to 0.3; and the preparation method comprises the following steps of: 1) weighing a compound containing Sr, a compound containing Mg, a compound containing Si and a compound containing Ce, mixing and then grinding for 30-60 minutes; 2) drying the ground mixed powder and continuously grinding to form powder; 3) carrying out high-temperature calcining for 2-48 hours in reducing atmosphere; and 4) crushing and grinding the calcined powder, and grading to obtain the cerium-ion-doped silicate blue fluorescent powder. The blue fluorescent powder prepared by the invention is good in crystal development and wider in emission spectrum and can better meet the packaging requirement of a white LED (light-emitting diode), chromaticity and luminosity stability are better, raw materials are cheap and easy to get, the preparation method is simple and practicable, and industrial production can be realized.
Owner:SHAANXI UNIV OF SCI & TECH

Red fluorescent powder and preparation method thereof

The invention discloses red fluorescent powder and a preparation method thereof. The red fluorescent powder is prepared by taking a compound containing Na<+>, a compound containing La<3+>, a compound containing Zr<4+> and a compound containing Eu<3+> as reaction raw materials, weighing the raw materials according to a stoichiometric ratio of a chemical formula NaLa1-xZr2O6:xEu<3+>, wherein x is equal to 0.03-0.11. The zirconate based fluorescent powder prepared by the method disclosed by the invention is low in relative synthesis temperature and high in luminous intensity, has good chemical stability and a relatively wide emission spectrum, is good in particle morphology, uniform in particle size and good in dispersity, and can realize red light emission when being excited by 365nm ultraviolet light.
Owner:SHAANXI UNIV OF SCI & TECH

Long-persistence luminescent material and its preparing method

The invention relates to long afterglow luminescent material. Its expression is as follows: a MO.b M'(S beta Se1-beta).c Al2O3.d B2O3.eP2O5: x Eu.y Ln, whose M is selected from one or many elements combination of Sr, Ca, Ba, Mg; M' is selected from one or many elements combination of Sr, Ca, Ba; ln can be one or many elements combination of Nd, Dy, Tm, La, Ce, Pr etc; a, b, c, d, e, x, and y are mol coefficients and their range are respectively as follows: a is more than 0.5 and less than 6.0; b is not less than 0.0001 and not more than 2.0; c is not less than 0.5 and not more than 9.0; d is not less than 0 and not more than 1.0; e is that as the d; x is not less than 0.00001 and not more than 0.25; y is not less than 0.00001 and not more than 0.3; beta is not less than 0 and not more than 1.0; the sum of the a and b is more than 0.5 and not more than 6.0; the sum of the d and e is not less than 0 and not more than 1.0. The preparing method is high temperature solid phase reaction for first oxidation, and then reduction.
Owner:DALIAN LUMINGLIGHT SCIENCE & TECHNOLOGY CO LTD

Cr < 3 + >-doped lithium indium germanate near-infrared luminescent material and preparation method thereof

The invention discloses a Cr < 3 + >-doped lithium indium germanate near-infrared luminescent material and a preparation method thereof, and belongs to the technical field of near-infrared luminescentmaterials. The chemical general formula of the material is LiIn1-x-yMyGe2O6: xCr < 3 + >, M is one or more of Sc and Ga elements, x is greater than or equal to 0.01 mol% and less than or equal to 20mol%, and y is greater than or equal to 0 and less than or equal to 0.5. In the near-infrared luminescent material, LiIn1-x-yMyGe2O6: xCr < 3 + > belongs to an orthorhombic system, and has a spatial crystal structure of the same type as LiInGe2O6. The material is wide in excitation spectrum, the excitation wavelength ranges from 250 nm to 850 nm and comprises the ultraviolet invisible wavelength range and the visible wavelength range, and the emission wavelength range of the material ranges from 700 nm to 1200 nm. The material is matched with a blue-light LED chip, can be used for manufacturing a wide-spectrum near-infrared light source, and is applied to the fields of plant illumination, biological probes and the like. The method is simple in preparation process, low in raw material priceand easy to synthesize.
Owner:UNIV OF SCI & TECH BEIJING

Phosphor and manufacturing method therefore, and light source using the phosphor

To provide a phosphor having a broad emission spectrum with a peak in the range from yellow color to red color (wavelength from 570 nm to 620 nm), having a flat excitation band with large area on the long wavelength side from near ultraviolet / ultraviolet to green color (wavelength from 250 nm to 550 nm), and excellent in emission intensity and luminance, and a method of manufacturing the same, and also a light source such as white LED using the phosphor. As raw materials, Ca3N2(2N), AlN(3N), Si3N4(3N), and Eu2O3(3N) are prepared, and out of each raw material, 0.950 / 3 mol of Ca3N2, 2 mol of AlN, 4 / 3 mol of Si3N4, and 0.050 / 2 mol of Eu2O3 are weighed, and the raw materials thus weighed are mixed by using a mortar. The raw materials thus mixed are put in a BN crucible, and retained / fired for 3 hours at 1700° C. in a nitrogen atmosphere, and thereafter cooled from 1700° C. to 200° C., to thereby obtain the phosphor expressed by a composition formulaCa0.950Al2Si4O0.075N7.917:Eu0.050.
Owner:NICHIA CORP +1

Phosphor for GaN based light-emitting diode and method for preparing same

The invention discloses phosphor powder for a GaN-based light-emitting diode and the preparation method thereof. The chemical formula of the phosphor powder is A(M1-x-yCexREy)Ga3S6O, in which A is at least one of the elements Ca, Sr or Ba; M is at least one of the elements La, Y or Gd;RE represents at least one of the elements Eu,Pr,Sm,Tb or Dy; x and y represent respectively mol percentage of Ce and RE compared with M; 0 less than x less than 1,0 less than or equal to y less than 1. The raw material is exactly weighed according to the chemical formula in preparing the phosphor powder. The weighed raw material is grinded fine, mixed uniformly, seared for 1 to 4 hours in the condition of shielding gas atmosphere and temperature of 850 to 1100 degrees centigrade, cooled, smashed and screened and then the product is prepared. Under the excitation of 300 to 500nm ray (especially 400nm and 460nm ray), the phosphor powder is capable of emitting 420 to 700nm rays. The phosphor powder is applicable for near ultraviolet or blue light LED chip. And the invention has the characteristics of broad excitation spectrum range, high luminescent brightness and simple preparation method, etc.
Owner:SUN YAT SEN UNIV

Phosphor, method for preparing phosphor, optoelectronic component, and method for producing optoelectronic component

The present invention relates to a phosphor, a method for preparing the phosphor, an optoelectronic component, and a method for producing the optoelectronic component. The phosphor has the following general formula: LaGaGeO: 3xA, yCr, 5zB, where x, y, and z do not equal to 0 simultaneously; A represents at least one of Gd and Yb; B represents at least one of Sn, Nb, and Ta. For the phosphor, its emission spectrum is within a red visible light region and a near-infrared region when excited by blue visible light, purple visible light or ultraviolet light; and it has a wide reflection spectrum and a high radiant flux. Therefore, it can be used in optoelectronic components such as LEDs to meet requirements of current medical testing, food composition analysis, security cameras, iris / facial recognition, virtual reality, gaming notebook and light detection and ranging applications.
Owner:EVERLIGHT ELECTRONICS
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