89 results about "Active zone" patented technology

A test element and method for detecting an analyte with the aid thereof is provided. The test element is essentially disk-shaped and flat, and can be rotated about a preferably central axis which is perpendicular to the plane of the disk-shaped test element. The test element has a sample application opening for applying a liquid sample, a capillary-active zone, in particular a porous, absorbent matrix, having a first end that is remote from the axis and a second end that is near to the axis, and a sample channel which extends from an area near to the axis to the first end of the capillary-active zone that is remote from the axis.

A reflector antenna system may include an arc-shaped antenna reflector defining a first antenna beam, and a phased array antenna positioned in the first antenna beam including first and second arrays of antenna elements coupled together in back-to-back relation. The first array may face the antenna reflector, and the second array may face away from it. A controller switchable between a reflecting mode and a direct mode may be connected to the arrays. The controller, when in the reflecting mode, may cause back-to-back pairs of first antenna elements from the arrays to define a feed-through zone for the first antenna beam, and cause second antenna elements in the first array to define a first active zone for the first antenna beam. Furthermore, when in the direct mode, the controller may cause antenna elements in the second array to define a second active zone for a second antenna beam.

The present invention discloses a one-time programmable memory, an electric system, an electric fuse memory, a programmable resistance assembly memory and a method thereof, wherein the programmable resistance assembly memory comprising a plurality of programmable resistance memory units, the programmable resistance assembly is coupled to a first power supply voltage line; and a diode comprising at least a first active zone and a second active zone, wherein the first active zone is provided with a first type of doping, the second active zone is provided with a second type of doping, the first active zone provides a first end of the diode, the second active zone provides a second end of the diode, the first active zone and the second active zone are all located in a same hole, the first active zone is coupled to the programmable resistance assembly, and the second active zone is coupled to a second power supply voltage line. The first and second active zones are manufactured from the source electrode or the drain electrode of a complementary metal oxide semiconductor CMOS assembly, and the programmable resistance assembly is programmed through applying a voltage to the first and second power supply lines.

The semiconductor memory device includes an electrically erasable programmable non-volatile memory cell having a single layer of gate material and including a floating-gate transistor and a control gate. The source, drain and channel regions of the floating-gate transistor form the control gate. Moreover, the memory cell includes a dielectric zone lying between a first part of the layer of gate material and a first semiconductor active zone electrically isolated from a second active zone incorporating the control gate. This dielectric zone then forms a tunnel zone for transferring, during erasure of the cell, the charges stored in the floating gate to the first active zone.

The field of the invention is that of integrated optical emission devices comprising a laser emission section and a section for modulating the optical power emitted by the laser, also known as ILM devices, the acronym standing for Integrated Laser Modulator. The invention is aimed at an ILM device comprising a laser section (1) and a modulation section (2) such as electro absorption modulator, formed in a PIN type common structure, where the structure successively comprises a substrate (10) in n doped semiconductor material, buried active zone (11) and p doped vertical confinement layer (16) and a semi-insulating lateral confinement layer (15). The laser section has a blocking layer (17) in n doped semiconductor material disposed between the semi-insulating lateral confinement layer and vertical confinement layers. The performance and the reliability of the final device is thus improved.

By using a two-step RTP (rapid thermal processing) process, the wafer is provided which has an ideal semiconductor device region secured by controlling fine oxygen precipitates and OiSFs (Oxidation Induced Stacking Fault) located on the surface region of the wafer. By performing the disclosed two-step rapid thermal process, the distribution of defects can be accurately controlled and an ideal device active zone can be formed up to a certain distance from the surfaces of the wafer. In addition, it is possible to maximize the internal gettering (IG) efficiency by enabling the oxygen precipitates and the bulk stacking faults to have constant densities in the depth direction in an internal region of the wafer, that is, the bulk region. In order to obtain the constant concentration profile of the oxygen precipitates and the bulk stacking faults in the bulk region, the wafer is subjected to the aforementioned two-step rapid thermal process in a predetermined mixed gas atmosphere.

The field of the invention is that of optical devices comprising an integrated semi-conductor laser and an integrated optical isolator. These devices are used mainly in the field of digital telecommunications. More particularly, the invention applies to so-called absorption isolators whose complex index is non-reciprocal and depends on the direction of propagation of the light. Generally, integrated optical isolators of this type fulfill two functions. On the one hand, they comprise a magneto-optical layer ensuring the non-reciprocal effect and on the other hand an active zone ensuring the amplification of the laser beam, the injection of the charge carriers into the active zone being ensured by an electrical contact layer. The invention proposes, so as to limit the disturbing effects of the contact layer on the propagation of the laser beam, that the contact layer be eliminated above the active zone and that the injection of the charge carriers be ensured via the lateral faces and the edges of the upper face of the active zone.