338results about How to "Easy to erase" patented technology

A method of operating a memory cell by applying a positive voltage to the gate sufficient to cause hole tunneling from the gate toward the charge storage layer is disclosed. The method is applied to a memory cell including a semiconductor layer having at least two source / drain regions disposed below a surface of the semiconductor layer and separated by a channel region. The memory cell also has a lower insulating layer disposed above the channel region; a charge storage layer disposed above the lower insulating layer; an upper insulating multi-layer structure disposed above the charge storage layer. The upper insulating multi-layer structure comprises a lower dielectric layer and an upper nitride layer disposed above the lower dielectric layer and the memory cell has a gate disposed above the upper insulating multi-layer structure.

Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.

Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.

Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.

The invention facilitates manufacture of semiconductor memory components by reducing the number of layers required to implement a semiconductor memory device. The invention provides for a selection element to be formed in the same layer as one of the control lines (e.g. one of the wordline and bitline). In one embodiment of the invention, a diode is implemented as the selection element within the same layer as one of the control lines. Production of the selection element within the same layer as one of the wordline and bitline reduces problems associated with vertical stacking, increases device yield and reduces related production costs. The invention also provides an efficient method of producing memory devices with the selection element in the same layer as one of the control lines.

Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.

The present invention presents a number of improvements for managing erase processes in non-volatile memory. Such memory systems typically manage the memory by logically organize the basic unit of physical erase (erase block) into composite logical groupings (meta-blocks or logical group), where an erase block generally consists of a number of sectors. When an erase command is received, the specified sectors are checked against the memory system's control data. If the specified sectors span any full logical grouping, the full logical groupings can each be treated a whole and erased according to one process (such as performing a true, physical erase), while other sectors are “logically” erased at the sector level by standard techniques.

An electrostatographic imaging member including: a flexible supporting substrate; an imaging layer having an optional adjacent ground strip layer coated on one side of the substrate; and an anti-curl backing layer coated on the other side of the substrate which layer is comprised of a film forming polymer binder, an optional adhesion promoting polymer, and a dispersion of polytetrafluoroethylene particles which dispersion has particles with a narrow diameter particle size distribution of from about 0.19 micrometer to about 0.21 micrometer, and an average diameter particle size of about 0.20 micrometer. The optional ground strip layer can include the same dispersion of polytetrafluoroethylene particles as the anti-curl backing layer.

The present invention presents a number of improvements for managing erase processes in non-volatile memory. Such memory systems typically manage the memory by logically organize the basic unit of physical erase (erase block) into composite logical groupings (meta-blocks or logical group), where an erase block generally consists of a number of sectors. When an erase command is received, the specified sectors are checked against the memory system's control data. If the specified sectors span any full logical grouping, the full logical groupings can each be treated as a whole and erased according to one process (such as performing a true, physical erase), while other sectors are “logically” erased at the sector level by standard techniques.

The present invention presents a number of improvements for managing erase processes in non-volatile memory. Such memory systems typically manage the memory by logically organize the basic unit of physical erase (erase block) into composite logical groupings (meta-blocks or logical group), where an erase block generally consists of a number of sectors. When an erase command is received, the specified sectors are checked against the memory system's control data. If the specified sectors span any full logical grouping, the full logical groupings can each be treated a whole and erased according to one process (such as performing a true, physical erase), while other sectors are “logically” erased at the sector level by standard techniques.

Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a hole-tunneling barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays and methods of operation.

Structures and methods for DEAPROM memory with low tunnel barrier intergate insulators are provided. The DEAPROM memory includes a first source / drain region and a second source / drain region separated by a channel region in a substrate. A floating gate opposes the channel region and is separated therefrom by a gate oxide. A control gate opposes the floating gate. The control gate is separated from the floating gate by a low tunnel barrier intergate insulator having a tunnel barrier of less than 1.5 eV. The low tunnel barrier intergate insulator includes a metal oxide insulator selected from the group consisting of NiO, Al2O3, Ta2O5, TiO2, ZrO2, Nb2O5, Y2O3, Gd2O3, SrBi2Ta2O3, SrTiO3, PbTiO3, and PbZrO3. The floating gate includes a polysilicon floating gate having a metal layer formed thereon in contact with the low tunnel barrier intergate insulator. And, the control gate includes a polysilicon control gate having a metal layer formed thereon in contact with the low tunnel barrier intergate insulator.

Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a hole-tunneling barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays and methods of operation.

A fingerprint easily erasable film formed by providing a resin layer on a substrate, in which surface of the resin layer is matted and which is formed so that the surface of the resin layer should show a wet tension (JIS-K 6768:1999) of 25 mN / m or higher. Preferably, the resin layer has a surface roughness of 0.2 to 2.0 μm in terms of the ten point mean roughness Rz (JIS-B 0601:1994). The resin layer preferably contains an ionizing radiation curable resin and a matting agent, more preferably, two kinds of matting agents having different average particle diameters. On the fingerprint easily erasable film having such a configuration, ingredients of fingerprint are unlikely to adhere, and even if ingredients of fingerprint adhere, the ingredients of fingerprint can be removed substantially completely or to such a degree that they cannot be visually observed by wiping with cloth or the like.

Structures and methods for DEAPROM memory with low tunnel barrier intergate insulators are provided. The DEAPROM memory includes a first source / drain region and a second source / drain region separated by a channel region in a substrate. A floating gate opposes the channel region and is separated therefrom by a gate oxide. A control gate opposes the floating gate. The control gate is separated from the floating gate by a low tunnel barrier intergate insulator having a tunnel barrier of less than 1.5 eV. The low tunnel barrier intergate insulator includes a metal oxide insulator selected from the group consisting of NiO, Al2O3, Ta2O5, TiO2, ZrO2, Nb2O5, Y2O3, Gd2O3, SrBi2Ta2O3, SrTiO3, PbTiO3, and PbZrO3. The floating gate includes a polysilicon floating gate having a metal layer formed thereon in contact with the low tunnel barrier intergate insulator. And, the control gate includes a polysilicon control gate having a metal layer formed thereon in contact with the low tunnel barrier intergate insulator.

Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.

The invention provides a method and system for terminal loss management, which relates to the field of remote protection of mobile terminal data, the processes of the method comprising that: a description file of terminal management tree is submitted to a terminal information database; a terminal management entity authenticates an applicant of terminal management operation and, after passing the authentication, authorizes a terminal management server to operate terminal functions and data through the loss management of remote terminal; the terminal management server issues operation instructions of loss management to a terminal management client; the terminal management client executes the instructions and performs the operations of terminal loss management; and the terminal management client returns operation results and states. The system comprises: a terminal side including a terminal management client and terminal functions and data; and a network side including a terminal information database, a terminal management server and a terminal management entity. The invention can remotely carry out data protection, data wiping, lock, unlock, factory state reset and other operations, to ensure the security of user data.

A reusable information tag is provided with a substrate bonded on its top surface to a middle layer which has graphics and indicia disposed upon its top surface, the middle layer being bonded to a transparent or translucent top layer of a nonporous writable and erasable film. A reusable means for attachment is provided. The tag may be written upon with a pen and attached to a gift, luggage or other article. It may then be easily detached, erased and reused. An unlimited variety of tags containing different graphics and indicia for every holiday, occasion, event, use and interest may be easily and inexpensively manufactured. A kit for making the tag is also provided. Alternative embodiments provide for disposing the graphics and indicia on either the top surface of the substrate or the bottom surface of the top layer.

The present invention presents a number of improvements for managing erase processes in non-volatile memory. Such memory systems typically manage the memory by logically organize the basic unit of physical erase (erase block) into composite logical groupings (meta-blocks or logical group), where an erase block generally consists of a number of sectors. When an erase command is received, the specified sectors are checked against the memory system's control data. If the specified sectors span any full logical grouping, the full logical groupings can each be treated as a whole and erased according to one process (such as performing a true, physical erase), while other sectors are “logically” erased at the sector level by standard techniques.

Memory cells including a semiconductor layer having at least two source / drain regions disposed below a surface of the semiconductor layer and separated by a channel region; a lower insulating layer disposed above the channel region; a charge storage layer disposed above the lower insulating layer; an upper insulating multi-layer structure disposed above the charge storage layer, wherein the upper insulating multi-layer structure comprises a polysilicon material layer interposed between a first dielectric layer and a second dielectric layer; and a gate disposed above the upper insulating multi-layer structure are described along with arrays thereof and methods of operation.

The invention provides a method for easily and promptly erasing an image (including a character) formed on a printed article with a low cost, and an apparatus employing such method. A printed article bearing an image formed on a surface including an inorganic pigment is exposed to a reactive gas generated by creeping discharge or corona discharge induced by a voltage applied between a pair of opposed electrodes, whereby the image is erased.

A memory device is provided that includes a plurality of memory cells. The memory device includes a plurality of stacks of conductive strips separated by insulating strips. Data storage structures including floating gates are disposed along the conductive strips in the stacks. Vertical channel films are disposed on sidewalls of the stacks. Memory cells in the plurality of memory cells have channels in the vertical channel films, and control gates in the conductive strips. A tunnel oxide layer is disposed between the vertical channel films and the floating gates. The floating gates can be coplanar with conductive strips in the plurality of stacks, or be disposed between the conductive strips in the plurality of stacks.

In an embodiment, a method of manufacturing a charge-trapping dielectric and a silicon-oxide-nitride-oxide-silicon (SONOS)-type non-volatile semiconductor device includes forming the charge-trapping dielectric, and a first oxide layer including silicon oxide. A silicon nitride layer including silicon-rich nitride is formed by a cyclic chemical vapor deposition (CVD) process using a silicon source material and a nitrogen source gas. A second oxide layer is formed on the silicon nitride layer. Hence, the charge-trapping dielectric having good erase characteristics is formed. In the SONOS-type non-volatile semiconductor device including the charge-trapping dielectric, a data erase process may be stably performed.

The invention belongs to the field of liquid crystal display and particularly discloses a liquid crystal composite film with a writing display function and a preparation method thereof. The liquid crystal composite film with the writing display function comprises a PET transparent film, a PVA insulating orientation layer, a liquid crystal / polymer / interval microsphere composite layer and a PET black film sequentially from top to bottom. The lower surface of the PET transparent film is coated with an ITO layer, and the upper surface of the PET black film is coated with an ITO layer. The liquid crystal composite film with the writing display function and the preparation method thereof have advantages that due to addition of the PVA insulating orientation layer, short circuit risks of two conductive layers are avoided, and accordingly the rate of finished products is sharply increased, service lives of the products are greatly prolonged, production cost is reduced, and the driving voltage of the liquid crystal film is lowered to increase key technical indexes such as brightness and contrast ratio of the film.

The invention relates to an intelligent terminal control electronic lock system which comprises an electronic lock and a mobile terminal connected with the electronic lock in a matching manner, wherein the electronic lock comprises a lockset cylinder and a lockset control module connected with the lockset cylinder in a matching manner; the lockset control module is connected with a storage chip and a lockset bluetooth module; the lockset control module can be connected with a terminal bluetooth module in the mobile terminal by the lockset bluetooth module in a matching manner; the mobile terminal can input unlocking information to the lockset control module through the terminal bluetooth module and the lockset bluetooth module; the lockset control module receives the unlocking information, and compares the unlocking information with unlocking verification information prestored by the storage chip; and when the unlocking information is matched with the unlocking verification information, the lockset control module drives to control the lockset cylinder to open the electronic lock. The electronic lock system is simple and compact in structure, convenient to use, wide in application scope, safe and reliable.

A transmission screen having a writable and erasable surface for one side is provided. This transmission screen is constructed so that the writable and erasable surface should have a specular gloss (JIS K5600-4-7:1999) of 70 to 135%, the transmission screen as a whole should have a haze (JIS K7136:2000) of 80% or more, and the surface opposite to the writable and erasable surface should have a specular gloss (JIS K5600-4-7:1999) of 10% or less. With this transmission screen, writing with a marker for white boards and erasing can be easily done while seeing images projected on the transmission screen, and the images from a projector do not become hard to see due to projection of the images on the body of a writer.

To provide a semiconductor memory device including an oxide semiconductor that can deal with instability of a threshold characteristic, in which writing is possible by a simple method. The semiconductor memory device functions by utilizing a characteristic that a threshold shifts when a thin film transistor including an oxide semiconductor is irradiated with ultraviolet light. Readout can be performed by setting a readout voltage between the threshold before the ultraviolet light irradiation and the threshold after irradiation. The threshold characteristic of an initial characteristic can be controlled by providing a back gate or by using two thin film transistors.