71results about How to "Large operating window" patented technology

Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.

Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.

Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.

Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.

Memory cells comprising thin film transistor, stacked arrays, employing bandgap engineered tunneling layers in a junction free, NAND configuration. The cells comprise a channel region in a semiconductor strip formed on an insulating layer; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising a multilayer structure including at least one layer having a hole-tunneling barrier height lower than that at the interface with the channel region; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer Arrays and methods of operation are described.

Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a hole-tunneling barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays and methods of operation.

Thin film transistor memory cells are stackable, and employ bandgap engineered tunneling layers in a junction free, NAND configuration, that can be arranged in 3D arrays. The memory cells have a channel region in a semiconductor strip formed on an insulating layer, a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure having a multilayer structure including at least one layer having a hole-tunneling barrier height lower than that at the interface with the channel region, a charge storage layer disposed above the tunnel dielectric structure, an insulating layer disposed above the charge storage layer, and a gate electrode disposed above the insulating layer.

Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a hole-tunneling barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays and methods of operation.

Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.

The invention relates to a polyamide organic silicon thermoplastic elastomer and a preparation method thereof. The structural formula of the polyamide organic silicon thermoplastic elastomer is as follows: in the formula, p is 25-65; q is 15-60; n is an integer of 25-50; the elastomer is formed by terminal amino propyl polydimethylsiloxane and terminal carboxyl polyamide-6 by high-temperature polycondensation. The elastomer is high in tensile strength, high in low-temperature impact-resistance strength, good in tear resistance, good in chemical resistance, and good in abrasive resistance, can replace common rubber and soft plastic, and is widely applied to automobiles and general consumer industries.

A metal etching solution applied to a copper-molybdenum film layer is disclosed. The metal etching solution includes, by weight, 5-10% of an oxidant, 1-5% of an organic acid, 1-5% of an inorganic acid, 0.5-5% of a chelating agent, 1-5% of an amine, 0.1-2% of a H2O2 stabilizer, 0.1-1% of inorganic salt and 10-90% of water. The metal etching solution is free of fluoride so that the metal etching solution is free of fluorinion, thus reducing the cost for treating wastewater generated after etching. The inorganic acid is adopted to replace a fluoride so that a product does not damage a glass substrate. The product is free of azole type inhibitors, an operation window is large, the azole type inhibitors form complexes with copper ions on the surface of metals to form film through chemical adsorption, and are inactivated when a chemical solution contains a large amount of copper ions and a copper etching rate is accelerated, thus causing great influences on CD LOSS and Taper. The metal etching solution can avoid this problem.

The invention discloses a plasma etching remainder detergent, which contains fluoride, organic amine, a solvent and water. The detergent has strong washing capability, can effectively remove plasma etching remainder on a metal wire (Metal), a channel (Via) and a metal pad (Pad) wafer, has smaller etching speed to non-metal materials (such as SiO2, ion enhanced tetraethoxy silane silicon dioxide (PETEOS), silicon, low dielectric material and the like), partial metal materials (such as Ti, Al and Cu) and so on, can be used for batch immersion type cleaning mode, batch rotation spray type cleaning mode and uniwafer rotation type cleaning mode, has larger operation window, and has excellent application prospect in semiconductor wafer cleaning and other micro-electronic fields.

The invention belongs to the technical fields of petroleum, coal and natural gas chemical industry, biomass processing and novel catalytic materials, and provides a copper-based polymer hybrid catalyst used in selective hydrogenation of acetylene and a preparation method thereof. In the invention, copper in different valence states is used for catalyzing a polymerization reaction of acetylene at high temperature to form a copper-containing polymer, a copper-based polymer hybrid material is generated in situ when acetylene-containing feed gas passes through a loaded copper-based catalyst at high temperature, and an activity assisting component with high hydrogen dissociation capability is introduced into a catalyst system, so that continuous growth of an acetylene polymer can be suppressed, and the yield of acetylene is increased. Compared with the conventional catalyst, the copper-based polymer hybrid catalyst has the advantages of extremely high acetylene selectivity (95 percent), very high catalytic activity (106 ml / g*h), wide operating window, applicability to front-end hydrogenation and back-end hydrogenation processes, reduction in production cost, extremely small amount of generated ethane and green oil under the condition that the amount of acetylene is extremely excessive, and reduction in environmental pollution.

The invention discloses a carrier brightener precursor for an alkaline zinc-plating or zinc alloy electroplating solution. The carrier brightener precursor is obtained by carrying out a one-time chemical reaction of a mixed amine of one amide functional group-containing ditertiary amine and one or more amide functional group-containing monotertiary amines. The invention also discloses a carrier brightener for the alkaline zinc-plating or zinc alloy electroplating solution. The carrier brightener is a random intercondensation polymer; and components participating copolycondensation mainly comprise the following two components: the carrier brightener precursor mixed amine and one or more bridging agents. The intercondensation polymer used as the carrier brightener of the alkaline zinc-plating or zinc alloy electroplating solution has quite good compatibility with a main brightening agent benzyl pyridinium-3-carboxylate which is widely used at present, dependence on sulfonated aromatic aldehyde can be reduced, on one hand, the tendency of blistering of a plating layer is overcome, an operating window is expanded, and at the same time, the dispersion property of the plating solution is relatively improved; and a high-brightness electroplating layer having high dispersibility and high covering power also can be obtained, and the plating layer has excellent spalling (foaming) resistant performance.

The invention discloses carrier brightening agent for alkaline galvanization and zinc alloy electroplate liquid. The carrier brightening agent is a random copolycondensate; and the following three components are mainly participated in copolycondensation: (a), one or more di-tertiary amine containing amide functional groups; (b), one or more single tertiary amine containing amide functional groups; and (c), one or more coupling agent-dihalogenation compounds. The carrier brightening agent has good compatibility with key light agent benzyl pyridine onium-3-carboxylate generally used at present, so that the dependence on sulfonated aromatic aldehyde can be reduced; the foaming trend of clad layers is overcome; the operation window is widened; and the dispersing performance of the plating liquid is improved synchronously. Bright electric plating layers with high dispersibility and high covering force can be obtained; and more importantly, the stripping (foaming) resistance of the plating layers is excellent.

The invention relates to a cleaning agent for engine die casting oil. The cleaning agent is composed of an alkaline substance, a surface active agent, an assistant and a water-based medium and comprises, by mass percent, 3.5%-4% of the alkaline substance, 0.05%-0.5% of the surface active agent, 0.5%-1% of the assistant and the balance the water-based medium. The cleaning agent is environment-friendly, the cleaning effect is good, and secondary pollution is avoided.

The invention discloses a tray device for etching a patterned sapphire substrate and a loading method. The tray device comprises a tray body, wherein a locating groove for fixing the sapphire substrate is formed in the upper surface of the tray body; the upper surface of the tray body and the surface of the locating groove are coated with heat conduction medium layers; the locating groove is 100 to 300 microns deep and 105 to 110 millimeters wide; a sinking region is arranged on the edge of the tray body; a height difference between the sinking region and the upper surface of the tray body is2 to 5 millimeters. The tray device improves the convenience in operation and effectively guarantees the manufacturing stability and the product yield of a PSS process.

Vessel including a hull of a substantially closed surface has at deck level a lifting crane, ballast tanks within the hull and a ballast control unit for admitting water to the ballast tanks for changing the draft of the vessel. The hull has a narrow lower section having first width over a height from keel level to a widening level, and a top section having a larger width than the lower section, extending from the widening level upwards towards deck level. The control unit is adapted to ballast the vessel to have a relatively shallow draft level in a transit mode, so that the wide top section is above water level, while the vessel is traveling, and to ballast the vessel to a relatively deep draft level in a lifting mode so that the widening level is below water level, at least when the vessel is substantially stationary and the crane is in its lifting position.

The invention relates to a photoresist stripping solution which is characterized by being prepared from organic amine, auxiliary organic amine, a polar organic solvent and a corrosion inhibitor. For solving the problem that an existing photoresist stripping solution operating window is small, the wafer substrate corrosivity is stronger and especially the capability of removing deeply hardened and cross-linked photoresist residues and a negative thick film photoresist is weak, the photoresist stripping solution which is strong in photoresist removal capability and large in operating window and does not corrode a wafer substrate is provided. The photoresist stripping solution can very effectively remove the photoresist and photoresist residues on LED chips and semiconductor wafers and especially has the strong capability of removing the deeply hardened and cross-linked photoresist residues and the negative thick film photoresist. In addition, the wafer substrate material is not corroded, the operating window is larger, and the service life is longer.

The invention discloses a color filter developing solution composition and belongs to the field of microelectronic material technology. The composition comprises, by weight, 1-45% of non-ionic Geminisurfactant, 0.1 to 30% of a strongly alkaline substance, 0.1 to 50% of a solubilizer, and 20-98% of high purity water. A concentration of the developing solution is 2.5 times that of a current marketproduct. At the same time, the developing solution has characteristics of high dispersion stability, less foam, a large operating window, a clear pattern after development, a good photoresist residueprevention effect, and a good substrate corrosion prevention effect and so on.

The invention belongs to the technical field of printed-circuit board electroplating and provides an inhibitor for copper-interconnection HDI electroplating porefilling and an electroplated copper bath. The inhibitor is an organic polyamine compound, the molecular structure of the inhibitor can be found in the specification, and R1 and R2 are phenyl, methyl, methoxyphenyl or phenyl derivatives. The inhibitor has the characteristics that rapid copper filling is performed on the hole bottom of an HDI board blind hole while the growth rate of HDI board surface copper is inhibited, and thus the surface copper can be thin after the blind hole is filled with plated copper; and in addition, the inhibitor furthermore has the advantages that an additive operation window is wide, the service life of a plating solution is long, and the like.

The invention discloses a preparation method of a solar cell. The preparation method comprises the following steps: 1, conducting P diffusion low-temperature deposition on a textured silicon wafer toform a first lightly doped layer; 2, depositing a mask layer on the first lightly doped layer; 3, after the mask layer is removed by laser at the position of a prefabricated electrode of the silicon wafer to form a film opening area, and cleaning the silicon wafer; 4, conducting secondary low-temperature deposition on the film opening area of the silicon wafer to form a phosphorus-rich layer; 5, removing the mask layer on the surface of the silicon wafer, and forming PN junctions and P +-P ++ high-low junctions on the silicon wafer. The lightly doped layer is firstly formed on the surface of the textured silicon wafer, then a mask layer is arranged, the first lightly doped layer at the electrode area is removed by laser to form the film opening area, then the phosphorus-rich layer is deposited in the film opening area, and the PN junctions and the P +-P ++ high-low junctions are prepared in a one-step knot pushing mode. Since light expansion and the square resistance of a re-diffusionarea can be optionally adjusted, an operation window is wide, additionally the mask layer is easily removed, and the process difficulty is low.

The invention relates to a method for preparing silicon dioxide and hydrogen chloride by means of hydrolysis of polysilicon by-product silicon tetrachloride. The method comprises the following steps of: adding additives and surfactants into an airtight reaction kettle with 5 to 30 mass percent of hydrochloric acid aqueous solution, adding the silicon tetrachloride into the airtight reaction kettle, wherein the input amount of the silicon tetrachloride is controlled to be between 0.4 and 0.9 m<3> / h; performing a hydrolysis reaction by controlling the temperature to be between 20 and 50 DEG C, and generating silica sol and hydrogen chloride gas; drying and recycling the hydrogen chloride gas; standing and aging the silica sol to form silicon dioxide precipitates; filtering and washing the silicon dioxide precipitates to remove the residual additives; and drying the washed silicon dioxide colloid, and thus obtaining precipitated white carbon black (silicon dioxide). The process has the characteristics of simple process flow, readily available raw materials, low production cost and the like.

The invention discloses a sealed gas chamber for testing comprehensive performance of an optical fiber gas sensor. The sealed gas chamber comprises a sealing cover, a body, a sealing ring, an incoming optical fiber hole, an outgoing optical fiber hole, a temperature-and-humidity probe mounting hole, an air inlet and an air outlet. According to the sealed gas chamber, double threads of the sealing cover and the sealing ring and a sealing gasket are utilized; furthermore the incoming optical fiber hole and the outgoing optical fiber hole are sealed by hot melt adhesive for ensuring airtightness of the sealed air chamber; and a temperature-and-humidity probe can be mounted in the temperature-and-humidity probe mounting hole for monitoring a temperature parameter and a humidity parameter of a working environment of a miniature gas sensor in the sealed gas chamber. Compared with other testing sealed gas chamber, the sealed gas chamber can realize comprehensive testing for the sensing performance and working environment parameters of the optical fiber gas sensor.

The invention relates to a catalyst for selectively catalytically reducing a nitrogen-oxygen compound by using propane under an oxygen-enriched condition. The catalyst is prepared from an active component which is silver oxide, and a carrier is TiO2 modified aluminum oxide; an auxiliary is Sm2O3; the catalyst is prepared by adopting an immersion method. The catalyst is high in catalytic activity and selectivity in C3H8-CSR reaction, can be used for catalytic purification of diesel vehicle tail gas and belongs to the field of environment pollution control.

The invention relates to field of polymers, in particular to a star type butylbenzene block copolymer and a preparation method and application thereof. The preparation method includes the steps of firstly, allowing styrene to have a first anionic polymerization reaction; secondly, adding an organic aluminum compound into a solution, containing polystyrene, obtained in the first step, mixing for 5-10 minutes, and adding butadiene to perform a second anionic polymerization reaction, wherein the organic aluminum compound contains at least one alkyl aluminum Al1 and at least one alkyl aluminum Al2; thirdly, adding a coupling agent with coupling functional groups being 3-4 to perform a coupling reaction. The preparation method has the advantages that the two alkyl aluminum are coordinated, a good high temperature resistant effect in a wide operating window can be guaranteed, and the obtained star type butylbenzene block copolymer can increase the high temperature performance of modified asphalt, has good compatibility with matrix asphalt and is promising in industrial application prospect.

The invention discloses acidic photoresist stripping liquid. The acidic photoresist stripping liquid comprises organic acid, polar organic solvents and corrosion inhibitors. The acidic photoresist stripping liquid has the advantages that photoresist residues on the surfaces of wafers can be completely removed by the acidic photoresist stripping liquid at the temperatures ranging from 30 DEG C to 100 DEG C, and substrate materials and epitaxy structures of LED chips and the wafers can be prevented from being corroded while photoresist residues on the surfaces of the LED chips and the wafers arecompletely removed by the acidic photoresist stripping liquid.

The invention provides a preparation method of a molecular sieve coating slurry for a monolithic catalyst, which comprises the following steps: mixing a molecular sieve with alumina sol dry powder, adding the mixture into water of which the pH value is adjusted in advance, carrying out ball milling dispersion, and aging the discharged slurry to form a stable and uniform mixed solution, namely the coating slurry. Compared with the traditional liquid sol, the Zeta potential value of the coating slurry obtained by the preparation method disclosed by the invention is obviously increased and can be increased from 17.65 mv to 35.37 mv, so that the problems that the molecular sieve slurry is unstable and easy to settle are thoroughly solved. The coating prepared by the method has good stability and good coating strength, wherein the one-time coating load rate can reach 36.45%, and the shedding rate can reach 2.87% or below. The coating slurry provided by the invention still does not settle after being kept for 6 months at most, so that the difficulty of a coating process is greatly reduced, and the slurry does not influence the conversion efficiency of NOx.

The invention discloses a chemical NiPdAu technology for an aluminum base material printed wiring board. The technology includes the following steps of cleaning, nitric acid pickling, primary acid-stage zinc replacement, nitric acid zinc deplating, secondary acid-stage zinc replacement, chemical nickel plating, chemical palladium plating and chemical gilding. By the adoption of the primary acid-stage zinc replacement and the secondary acid-stage zinc replacement in the technology, compared with a traditional alkaline zinc dipping solution, the acid-base environment of an acid zinc dipping solution adopted is mild, attack to aluminum is small, the reaction speed is relatively low in times of zinc replacement, a zinc layer is quite compact. Nickel sulfate and zinc sulfate are included in the chemical NiPdAu technology and can be dissolved into water in the acid environment, and nickel replacement can happen while zinc replacement is conducted. Due to the existence of nickel, a catalytic activity center is provided for chemical nickel plating, the amount of zinc entering a chemical nickel-plating solution is reduced, and the service life of the chemical nickel-plating solution is prolonged.

The invention relates to the field of polymer and specifically provides a linear styrene-butadiene block copolymer and a preparation method and application thereof. The preparation method of the linear styrene-butadiene block copolymer comprises the following steps: (1) carrying out a first anionic polymerisation reaction on styrene; (2) adding an organo-aluminium compound into a polystyrene-containing solution obtained in the step (1) and mixing for 5-10 min, and adding butadiene to carry out a second anionic polymerisation reaction; wherein the organo-aluminium compound contains at least an aluminium alkyl Al1 and at least an aluminium alkyl Al2; and (3) adding a coupling agent with two coupling functional groups to carry out a coupled reaction. According to the preparation method of the linear styrene-butadiene block copolymer, two kinds of aluminium alkyl are used in cooperation such that a good high-temperature blockage effect can be guaranteed in a wide operation window, and the obtained linear styrene-butadiene block copolymer has good compatibility with matrix asphalt. In addition, low temperature performance of matrix asphalt can be remarkably reduced. The product has an industrial application prospect.