71results about How to "Large operating window" patented technology

Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.

Memory cells comprising thin film transistor, stacked arrays, employing bandgap engineered tunneling layers in a junction free, NAND configuration. The cells comprise a channel region in a semiconductor strip formed on an insulating layer; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising a multilayer structure including at least one layer having a hole-tunneling barrier height lower than that at the interface with the channel region; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer Arrays and methods of operation are described.

The invention belongs to the technical fields of petroleum, coal and natural gas chemical industry, biomass processing and novel catalytic materials, and provides a copper-based polymer hybrid catalyst used in selective hydrogenation of acetylene and a preparation method thereof. In the invention, copper in different valence states is used for catalyzing a polymerization reaction of acetylene at high temperature to form a copper-containing polymer, a copper-based polymer hybrid material is generated in situ when acetylene-containing feed gas passes through a loaded copper-based catalyst at high temperature, and an activity assisting component with high hydrogen dissociation capability is introduced into a catalyst system, so that continuous growth of an acetylene polymer can be suppressed, and the yield of acetylene is increased. Compared with the conventional catalyst, the copper-based polymer hybrid catalyst has the advantages of extremely high acetylene selectivity (95 percent), very high catalytic activity (106 ml/g*h), wide operating window, applicability to front-end hydrogenation and back-end hydrogenation processes, reduction in production cost, extremely small amount of generated ethane and green oil under the condition that the amount of acetylene is extremely excessive, and reduction in environmental pollution.

Vessel including a hull of a substantially closed surface has at deck level a lifting crane, ballast tanks within the hull and a ballast control unit for admitting water to the ballast tanks for changing the draft of the vessel. The hull has a narrow lower section having first width over a height from keel level to a widening level, and a top section having a larger width than the lower section, extending from the widening level upwards towards deck level. The control unit is adapted to ballast the vessel to have a relatively shallow draft level in a transit mode, so that the wide top section is above water level, while the vessel is traveling, and to ballast the vessel to a relatively deep draft level in a lifting mode so that the widening level is below water level, at least when the vessel is substantially stationary and the crane is in its lifting position.

The invention relates to a photoresist stripping solution which is characterized by being prepared from organic amine, auxiliary organic amine, a polar organic solvent and a corrosion inhibitor. For solving the problem that an existing photoresist stripping solution operating window is small, the wafer substrate corrosivity is stronger and especially the capability of removing deeply hardened and cross-linked photoresist residues and a negative thick film photoresist is weak, the photoresist stripping solution which is strong in photoresist removal capability and large in operating window and does not corrode a wafer substrate is provided. The photoresist stripping solution can very effectively remove the photoresist and photoresist residues on LED chips and semiconductor wafers and especially has the strong capability of removing the deeply hardened and cross-linked photoresist residues and the negative thick film photoresist. In addition, the wafer substrate material is not corroded, the operating window is larger, and the service life is longer.

The invention discloses a color filter developing solution composition and belongs to the field of microelectronic material technology. The composition comprises, by weight, 1-45% of non-ionic Geminisurfactant, 0.1 to 30% of a strongly alkaline substance, 0.1 to 50% of a solubilizer, and 20-98% of high purity water. A concentration of the developing solution is 2.5 times that of a current marketproduct. At the same time, the developing solution has characteristics of high dispersion stability, less foam, a large operating window, a clear pattern after development, a good photoresist residueprevention effect, and a good substrate corrosion prevention effect and so on.

The invention discloses a preparation method of a solar cell. The preparation method comprises the following steps: 1, conducting P diffusion low-temperature deposition on a textured silicon wafer toform a first lightly doped layer; 2, depositing a mask layer on the first lightly doped layer; 3, after the mask layer is removed by laser at the position of a prefabricated electrode of the silicon wafer to form a film opening area, and cleaning the silicon wafer; 4, conducting secondary low-temperature deposition on the film opening area of the silicon wafer to form a phosphorus-rich layer; 5, removing the mask layer on the surface of the silicon wafer, and forming PN junctions and P +-P ++ high-low junctions on the silicon wafer. The lightly doped layer is firstly formed on the surface of the textured silicon wafer, then a mask layer is arranged, the first lightly doped layer at the electrode area is removed by laser to form the film opening area, then the phosphorus-rich layer is deposited in the film opening area, and the PN junctions and the P +-P ++ high-low junctions are prepared in a one-step knot pushing mode. Since light expansion and the square resistance of a re-diffusionarea can be optionally adjusted, an operation window is wide, additionally the mask layer is easily removed, and the process difficulty is low.

The invention relates to a method for preparing silicon dioxide and hydrogen chloride by means of hydrolysis of polysilicon by-product silicon tetrachloride. The method comprises the following steps of: adding additives and surfactants into an airtight reaction kettle with 5 to 30 mass percent of hydrochloric acid aqueous solution, adding the silicon tetrachloride into the airtight reaction kettle, wherein the input amount of the silicon tetrachloride is controlled to be between 0.4 and 0.9 m<3>/h; performing a hydrolysis reaction by controlling the temperature to be between 20 and 50 DEG C, and generating silica sol and hydrogen chloride gas; drying and recycling the hydrogen chloride gas; standing and aging the silica sol to form silicon dioxide precipitates; filtering and washing the silicon dioxide precipitates to remove the residual additives; and drying the washed silicon dioxide colloid, and thus obtaining precipitated white carbon black (silicon dioxide). The process has the characteristics of simple process flow, readily available raw materials, low production cost and the like.

The invention discloses acidic photoresist stripping liquid. The acidic photoresist stripping liquid comprises organic acid, polar organic solvents and corrosion inhibitors. The acidic photoresist stripping liquid has the advantages that photoresist residues on the surfaces of wafers can be completely removed by the acidic photoresist stripping liquid at the temperatures ranging from 30 DEG C to 100 DEG C, and substrate materials and epitaxy structures of LED chips and the wafers can be prevented from being corroded while photoresist residues on the surfaces of the LED chips and the wafers arecompletely removed by the acidic photoresist stripping liquid.

The invention provides a preparation method of a molecular sieve coating slurry for a monolithic catalyst, which comprises the following steps: mixing a molecular sieve with alumina sol dry powder, adding the mixture into water of which the pH value is adjusted in advance, carrying out ball milling dispersion, and aging the discharged slurry to form a stable and uniform mixed solution, namely the coating slurry. Compared with the traditional liquid sol, the Zeta potential value of the coating slurry obtained by the preparation method disclosed by the invention is obviously increased and can be increased from 17.65 mv to 35.37 mv, so that the problems that the molecular sieve slurry is unstable and easy to settle are thoroughly solved. The coating prepared by the method has good stability and good coating strength, wherein the one-time coating load rate can reach 36.45%, and the shedding rate can reach 2.87% or below. The coating slurry provided by the invention still does not settle after being kept for 6 months at most, so that the difficulty of a coating process is greatly reduced, and the slurry does not influence the conversion efficiency of NOx.