Inhibitor for copper-interconnection HDI electroplating porefilling and electroplated copper bath

Abstract

The invention belongs to the technical field of printed-circuit board electroplating and provides an inhibitor for copper-interconnection HDI electroplating porefilling and an electroplated copper bath. The inhibitor is an organic polyamine compound, the molecular structure of the inhibitor can be found in the specification, and R1 and R2 are phenyl, methyl, methoxyphenyl or phenyl derivatives. The inhibitor has the characteristics that rapid copper filling is performed on the hole bottom of an HDI board blind hole while the growth rate of HDI board surface copper is inhibited, and thus the surface copper can be thin after the blind hole is filled with plated copper; and in addition, the inhibitor furthermore has the advantages that an additive operation window is wide, the service life of a plating solution is long, and the like.

Description

technical field [0001] The invention belongs to the technical field of printed circuit board electroplating, and relates to a micro-blind hole filling copper plating process, in particular to an inhibitor and an electroplating copper bath for copper interconnection HDI electroplating and filling holes. Background technique [0002] PCB board electroplating process is a tedious work, with more and more layers, smaller and smaller via hole diameters (through holes and blind holes), higher performance materials and power lines in the electroplating system The uneven distribution of holes and openings has led to a sharp increase in the current technical difficulty. For example, HDI printed circuit boards and integrated circuit packaging substrates require high-density wiring, and the diameter of through holes and micro-blind holes are <100 μm; In circuit boards, through-hole plating and blind hole copper filling are also required at the same time; therefore, the electroplatin...

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Problems solved by technology

[0003] At present, Professor Weiping Dou of Chung Hsing University in Taiwan, China uses PEG as an inhibitor, sodium polydithiodipropane sulfonate (SPS) and sodium 3-mercapto-1-propane sulfonate (MPS) as accelerators, and Janus Green B (Janus Green B, JGB) and Diazine Black (DiazineBlack, DB) are leveling agents ([1]W.p.Dow et al.Electrochim.Acta.53(2008)3610–3619.[2]W.-P.Dow et al. / Electrochimica Acta 54(2009)5894–5901.[3]W.P.Dow et al.J.Electrochem.Soc. 152(2005)C425-C434.[4]W.P.Dow et al. )C134-C1 37.), and in an acidic system with an appropriate amount of chloride ions, a large number of experiments have been done on micro-blind vias with different thickness-to-diameter ratios. However, the above-mentioned system with PEG as an inhibitor will There are defects such as thick copper plating surface thickness, narrow additive operation window, and low service life of the plating solution, so it is not suitable for large-scale production

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