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Metal etching solution applied to copper-molybdenum film layer

A technology of metal etching and film layer, which is applied in the field of etching solution, can solve the problems of high harm to users, etching of glass substrates, high corrosiveness of fluorine ions, etc., and achieve the effect of reducing processing costs and widening the operating window

Active Publication Date: 2018-09-25
惠州达诚微电子材料有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

And the etchant in the prior art: as publication number is: the copper-molybdenum etchant disclosed in Chinese patents such as CN103890232A, CN103668208A, CN101684557A, almost all added the fluoride of certain mass fraction, be used for improving the etching speed of copper-molybdenum alloy; However, the addition of fluoride has the following disadvantages: firstly, the ionization of fluoride to produce fluoride ions will pollute the environment greatly, which makes the cost of wastewater treatment high; moreover, fluoride ions are highly toxic and harmful to users; finally, fluoride ions are highly corrosive. Will etch glass substrates
In addition, many etching solutions in the prior art have added azole corrosion inhibitors, which have a great impact on CD LOSS and Taper

Method used

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  • Metal etching solution applied to copper-molybdenum film layer
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Embodiment Construction

[0018] The following are only preferred embodiments of the present invention, and therefore do not limit the protection scope of the present invention.

[0019] A metal etching solution applied to a copper-molybdenum film layer, which is composed of the following components according to weight percentage: 5%-10% of oxidizing agent; 1%-5% of organic acid; 1%-5% of inorganic acid; 0.5% of chelating agent -5%; Amine 1% -5%; H 2 o 2 Stabilizer 0.1%-2%; Inorganic salt 0.1%-1%; Water 10%-90%.

[0020] in,

[0021] Oxidant is H 2 o 2 , H 2 o 2 Oxygen ions [OH] are produced by decomposition 2 - ], to ensure that the etching is carried out, and to determine the etching rate;

[0022] The organic acid is one or more of water-soluble organic acids such as citric acid, tartaric acid, malic acid, salicylic acid, glycolic acid, and acetic acid;

[0023] The inorganic acid replaces the fluoride, and the inorganic acid is one or more of phosphoric acid, boric acid, nitric acid, and ...

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Abstract

A metal etching solution applied to a copper-molybdenum film layer is disclosed. The metal etching solution includes, by weight, 5-10% of an oxidant, 1-5% of an organic acid, 1-5% of an inorganic acid, 0.5-5% of a chelating agent, 1-5% of an amine, 0.1-2% of a H2O2 stabilizer, 0.1-1% of inorganic salt and 10-90% of water. The metal etching solution is free of fluoride so that the metal etching solution is free of fluorinion, thus reducing the cost for treating wastewater generated after etching. The inorganic acid is adopted to replace a fluoride so that a product does not damage a glass substrate. The product is free of azole type inhibitors, an operation window is large, the azole type inhibitors form complexes with copper ions on the surface of metals to form film through chemical adsorption, and are inactivated when a chemical solution contains a large amount of copper ions and a copper etching rate is accelerated, thus causing great influences on CD LOSS and Taper. The metal etching solution can avoid this problem.

Description

technical field [0001] The invention relates to the technical field of etching solutions, in particular to a metal etching solution applied to copper-molybdenum film layers. Background technique [0002] Etching solution is a raw material for copper engraving, which is used for engraving by eroding the characteristics of the material. According to different materials, the composition of the etching solution is different. [0003] The material of the metal wiring in the traditional liquid crystal display device is mostly aluminum or aluminum alloy, and the corresponding metal etchant is generally a mixture of inorganic acids. With the development of display technology, especially towards the development of large-scale and high-resolution. TFT liquid crystal display is an active matrix display formed by introducing thin film transistor switches into twisted nematic liquid crystal display. Commonly, amorphous silicon is usually used in the TFT layer as the wire material of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18C23F1/26
CPCC23F1/18C23F1/26
Inventor 卢燕燕张丽燕
Owner 惠州达诚微电子材料有限公司
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