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Acidic photoresist stripping liquid

A photoresist and stripping solution technology, applied in the field of microelectronics, can solve problems such as damage, corrosion of base materials, and large operating window.

Inactive Publication Date: 2018-11-13
KUNSHAN SIGO MICROELECTRONICS MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to develop an acidic photoresist stripping solution, the photoresist stripping solution has a strong deglue ability and a large operating window, and can effectively solve the phenomenon of corrosion or damage of the substrate material and epitaxy during the degumming process

Method used

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Embodiment Construction

[0021] The advantages of the present invention are further described below through specific examples, but the protection scope of the present invention is not limited only to the following examples.

[0022] Component and content of table 1 embodiment and comparative example cleaning solution:

[0023] Table 1

[0024]

[0025]

[0026] In order to further investigate the implementation effect of the photoresist stripping solution, the present invention adopts the following technical means: the wafer is cut into a coupon wafer of 3cm*3cm, the front of the wafer has been patterned and transferred through the photolithography process, and the coupon The wafer is immersed in the photoresist stripping solution, soaked at 30°C to 90°C for 3-30min, rinsed and dried with high-purity nitrogen.

[0027] The wafer cleaning situation of table 2 part embodiment

[0028] Table 2

[0029]

[0030] As can be seen from Table 2, the acidic photoresist stripping solution of the pres...

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PUM

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Abstract

The invention discloses acidic photoresist stripping liquid. The acidic photoresist stripping liquid comprises organic acid, polar organic solvents and corrosion inhibitors. The acidic photoresist stripping liquid has the advantages that photoresist residues on the surfaces of wafers can be completely removed by the acidic photoresist stripping liquid at the temperatures ranging from 30 DEG C to 100 DEG C, and substrate materials and epitaxy structures of LED chips and the wafers can be prevented from being corroded while photoresist residues on the surfaces of the LED chips and the wafers arecompletely removed by the acidic photoresist stripping liquid.

Description

technical field [0001] The invention provides a photoresist stripping solution composition for removing photoresist residues in the field of microelectronics, especially in the field of LED chip and semiconductor wafer manufacturing, and a use method thereof. The photoresist stripping solution is acidic Cleaning agents that do not corrode substrate materials, especially epitaxial substrates, while completely removing or stripping photoresist residues. Background technique [0002] In the usual manufacturing process of LED chips and semiconductor wafers, photoresist is required as an anti-mask for pattern transfer. After exposure, development, etching and other photolithography processes and pattern transfer are completed, photoresist residues need to be removed for the next process. This process requires complete removal of photoresist residues without etching any base material. [0003] At present, the strippers used to remove photoresist residues on the market are mainly...

Claims

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Application Information

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IPC IPC(8): G03F7/42
CPCG03F7/426
Inventor 刘江华孙翠侠贾亚军潘阳
Owner KUNSHAN SIGO MICROELECTRONICS MATERIALS
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