156results about How to "Improve device yield" patented technology

An interconnect layout method capable of reducing variations in shape of gate patterns and improving yield of a semiconductor device is provided. In an interconnect layout 100, the first gate pattern, the second gate pattern, the first dummy pattern, and the second dummy pattern are arranged so that, if a wavelength of a light used to expose the first gate pattern and the second gate pattern is λ, natural numbers are m1, m2, and m3, the first predetermined distance is P1, the second predetermined distance is P2, the third predetermined distance is P3, a design value of the first predetermined distance is P1′, a design value of the second predetermined distance is P2′, and a design value of the third predetermined distance is P3′, then the first predetermined distance satisfies relationships of P1=m1λ and P1′−0.1λ≦P1≦P1′+0.1λ, the second predetermined distance satisfies relationships of P2=m2λ and P2′−0.1λ≦P2≦P2′+0.1λ, and the third predetermined distance satisfies relationships of P3=m3λ and P3′−0.1λ≦P3≦P3′+0.1λ.

Backthinning in an area selective manner is applied to CMOS imaging sensors 12 for use in electron bombarded active pixel array devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels of an active pixel array providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.

In an interconnect layout 100, the first gate pattern, the second gate pattern, the first dummy pattern, and the second dummy pattern are arranged so that, if a wavelength of a light used to expose the first gate pattern and the second gate pattern is λ, natural numbers are m1, m2, and m3, the first predetermined distance is P1, the second predetermined distance is P2, the third predetermined distance is P3, a design value of the first predetermined distance is P1′, a design value of the second predetermined distance is P2′, and a design value of the third predetermined distance is P3′, then the first predetermined distance satisfies relationships of P1=m1λ and P1′−0.1λ≦P1≦P1′+0.1λ, the second predetermined distance satisfies relationships of P2=m2λ and P2′−0.1λ≦P2≦P2′+0.1λ, and the third predetermined distance satisfies relationships of P3=m3λ and P3′−0.1λ≦P3≦P3′+0.1λ.

An efficient method and computer program for modeling and improving stating memory performance across process variations and environmental conditions provides a mechanism for raising the performance of memory arrays beyond present levels / yields. Statistical (Monte-Carlo) analyses of subsets of circuit parameters are performed for each of several memory performance variables and then sensitivities of each performance variable to 15 each of the circuit parameters are determined. The memory cell design parameters and / or operating conditions of the memory cells are then adjusted in conformity with the sensitivities, resulting in improved memory yield and / or performance. Once a performance level is attained, the sensitivities can then be used to alter the probability distributions of the performance variables to achieve a higher yield. Multiple cell designs can be compared for performance, yield and sensitivity of performance variables to circuit parameters over particular environmental conditions in order to select the best cell design.

A contact structure includes a first contact formed in a first dielectric layer connecting to the source / drain region of a MOS transistor, and a second contact formed in a second dielectric layer connecting to a gate region of a MOS transistor or to a first contact. A butted contact structure abutting a source / drain region and a gate electrode includes a first contact formed in a first dielectric layer connecting to the source / drain region of a MOS transistor, and a second contact formed in a second dielectric layer with one end resting on the gate electrode and the other end in contact with the first contact.

A BE patterning scheme in a MRAM is disclosed that avoids damage to the MTJ array and underlying ILD layer while reducing BE-BE shorts and BE-bit line shorts. A protective dielectric layer is coated over a MTJ array before a photoresist layer is coated and patterned on the dielectric layer. The photoresist pattern is transferred through the dielectric layer with a dielectric etch process and then through the BE layer with a metal etch that includes a certain amount of overetch to remove metal residues. The photoresist is stripped with a sequence involving immersion or spraying with an organic solution followed by oxygen ashing to remove any other organic materials. Finally, a second wet strip is performed with a water based solution to provide a residue free substrate. In another embodiment, a bottom anti-reflective coating (BARC) is inserted between the photoresist and dielectric layer for improved critical dimension control.

The invention facilitates manufacture of semiconductor memory components by reducing the number of layers required to implement a semiconductor memory device. The invention provides for a selection element to be formed in the same layer as one of the control lines (e.g. one of the wordline and bitline). In one embodiment of the invention, a diode is implemented as the selection element within the same layer as one of the control lines. Production of the selection element within the same layer as one of the wordline and bitline reduces problems associated with vertical stacking, increases device yield and reduces related production costs. The invention also provides an efficient method of producing memory devices with the selection element in the same layer as one of the control lines.

A BE patterning scheme in a MRAM is disclosed that avoids damage to the MTJ array and underlying ILD layer while reducing BE-BE shorts and BE-bit line shorts. A protective dielectric layer is coated over a MTJ array before a photoresist layer is coated and patterned on the dielectric layer. The photoresist pattern is transferred through the dielectric layer with a dielectric etch process and then through the BE layer with a metal etch that includes a certain amount of overetch to remove metal residues. The photoresist is stripped with a sequence involving immersion or spraying with an organic solution followed by oxygen ashing to remove any other organic materials. Finally, a second wet strip is performed with a water based solution to provide a residue free substrate. In another embodiment, a bottom anti-reflective coating (BARC) is inserted between the photoresist and dielectric layer for improved critical dimension control.

A method of forming a non-volatile memory device. The method includes providing a substrate having a surface region and forming a first dielectric material overlying the surface region of the substrate. A first electrode structure is formed overlying the first dielectric material and a p+ polycrystalline silicon germanium material is formed overlying the first electrode structure. A p+ polycrystalline silicon material is formed overlying the first electrode structure using the polycrystalline silicon germanium material as a seed layer at a deposition temperature ranging from about 430 Degree Celsius to about 475 Degree Celsius without further anneal. The method forms a resistive switching material overlying the polycrystalline silicon material, and a second electrode structure including an active metal material overlying the resistive switching material.

Backthinning in an area selective manner is applied to imaging sensors 12 for use in electron bombarded devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.

A method of forming a memory device. The method provides a semiconductor substrate having a surface region. A first dielectric layer is formed overlying the surface region of the semiconductor substrate. A bottom wiring structure is formed overlying the first dielectric layer and a second dielectric material is formed overlying the top wiring structure. A bottom metal barrier material is formed to provide a metal-to-metal contact with the bottom wiring structure. The method forms a pillar structure by patterning and etching a material stack including the bottom metal barrier material, a contact material, a switching material, a conductive material, and a top barrier material. The pillar structure maintains a metal-to-metal contact with the bottom wiring structure regardless of the alignment of the pillar structure with the bottom wiring structure during etching. A top wiring structure is formed overlying the pillar structure at an angle to the bottom wiring structure.

Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.

A method of forming a contact plug of an eDRAM device includes the following steps: forming a tungsten layer with tungsten seam on a dielectric layer to fill a contact hole; removing the tungsten layer from the top surface of the dielectric layer, recessing the tungsten layer in the contact hole to form a recess of about 600˜900 Angstroms in depth below the top surface of the dielectric layer, depositing a conductive layer on the dielectric layer and the recessed tungsten plug to fill the recess; and removing the conductive layer from the top surface of the dielectric layer to form a conductive plug on the recessed tungsten plug in the contact hole.

A method of forming a crack prevention ring at the exterior edge of an integrated circuit to prevent delamination and cracking during the separation of the integrated circuits into individual die. The crack prevention ring extends vertically into a semiconductor workpiece to at least a metallization layer of the integrated circuit. The crack prevention ring may be formed simultaneously with the formation of test pads of the integrated circuits. The crack prevention ring may be partially or completely filled with conductive material. An air pocket may be formed within the crack prevention ring beneath a passivation layer of the integrated circuit. The crack prevention ring may be removed during the singulation process. An optional seal ring may be formed between the crack prevention ring and the integrated circuit.

An oxide layer is used to seal pores in porous low-dielectric constant materials, thus preventing the migration of subsequently deposited copper materials into the porous low-dielectric constant materials in damascene processes. The oxide layer is deposited over the inner surface of at least one pore along a sidewall of the patterned low-dielectric constant material. In one embodiment, the oxide layer is deposited using atomic layer deposition (ALD), and the oxide layer comprises SiO2.

A sensing circuit is disclosed. The sensing circuit includes a first path including a first resistive memory device and a second path including a reference resistive memory device. The first path is coupled to a first split path including a first load transistor and to a second split path including a second load transistor. The second path is coupled to a third split path including a third load transistor and to a fourth split path including a fourth load transistor.

A nitride semiconductor free-standing substrate formed of a free-standing nitride-based compound semiconductor crystal that has a variation in lattice constant of ±12 ppm or less.

Systems and methods are described for improved yield and line width performance for liquid polymers and other materials. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH includes: developing at least a portion of a polymer layer on a substrate with an initial charge of a developer fluid; then rinsing the polymer with an additional charge of the developer fluid so as to controllably minimize a subsequent sudden change in pH; and then rinsing the polymer with a charge of another fluid. An apparatus for minimizing fluid impingement force on a polymer layer to be developed on a substrate includes: a nozzle including: a developer manifold adapted to supply a developer fluid; a plurality of developer fluid conduits coupled to the developer manifold; a rinse manifold adapted to supply a rinse fluid; and a plurality of rinse fluid conduits coupled to the developer manifold. The developer manifold and the rinse manifold can be staggered so as to reduce an external width of the nozzle compared to a nominal external width of the nozzle achievable without either intersecting the fluid manifold and the another manifold or staggering the fluid manifold and the another manifold. The systems and methods provide advantages including improve yield via reduced process-induced defect and partial counts, and improved critical dimension (CD) control capability.