Disclosed is a method that forms a conductive layer on a substrate and patterns sacrificial structures above the conductive layer. Next, the invention forms sidewall spacers adjacent the sacrificial structures using a spacer material capable of undergoing dimensional change, after which the invention removes the sacrificial structures in
processing that leaves the sidewall spacers in place. The invention then protects selected ones of the sidewall spacers using a sacrificial
mask and leaves the other ones of the sidewall spacers unprotected. This allows the invention to selectively
expose the unprotected sidewall spacers to
processing that changes the size of the unprotected sidewall spacers. This causes the unprotected sidewall spacers have a different size than protected sidewall spacers. Then, the invention removes the sacrificial
mask and patterns the conductive layer using the sidewall spacers as a gate conductor
mask to create differently sized gate conductors on the substrate. Following this, the invention removes the sidewall spacers and forms the source, drain, and channel regions adjacent the gate conductors.