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Phosphor for GaN based light-emitting diode and method for preparing same

A technology of light-emitting diodes and phosphors, which is applied in the field of white light LEDs, can solve the problems of undiscovered, matching excitation wavelengths of phosphors, and can not well satisfy UV-LEDs, etc., and achieves the effect of broadening the emission spectrum.

Inactive Publication Date: 2008-04-16
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, many existing fluorescent powders that can be used for 400nm purple tube (UV-LED) excitation cannot match well with UV-LED on the excitation wavelength, such as blue powder BaMgAl for LED commercial products. 10 o 17 :Eu 2+ (BAM) does not have a strong absorption at 400nm, so it cannot meet the needs of UV-LED very well
[0005] In 2004, the Chinese patent published (M 1-x RE x )AGa 3 S 6 O-type fluorescent powder and its preparation method (CN1539918A), in 2005, see also the literature report of J.Alloy.Compd. (alloy and compound) [X.M.Zhang, et al., J.Alloy.Compd.389 (2005) 247 ], but none of these have been reported (M 1-x RE x )AGa 3 S 6 Pure-phase compounds of O-type phosphors, and no reports have been found so far of doping such compounds with rare earth element cerium and cerium and other elements

Method used

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  • Phosphor for GaN based light-emitting diode and method for preparing same
  • Phosphor for GaN based light-emitting diode and method for preparing same
  • Phosphor for GaN based light-emitting diode and method for preparing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Example 1: Ca(La 0.8 Ce 0.2 ) Ga 3 S 6 Synthesis of O phosphor powder:

[0027] CaCO 3 (analytical pure) 0.1122 grams;

[0028] La 2 S 3 0.2992 grams;

[0029] Ga2 S 3 0.7069 grams;

[0030] Ce 2 S 3 0.0753 grams;

[0031] La 2 o 3 (99.99%), CeO 2 (99.99%) at 1200°C, reducing gas CS 2 Burning for 3 to 4 hours at lower temperature to obtain La 2 S 3 , Ce 2 S 3 Raw materials; the Ga 2 o 3 (analytical pure) at 900 ° C, reducing gas CS 2 Ignite for 2 to 3 hours to obtain Ga 2 S 3 raw material. Weigh the obtained raw materials according to the above composition, grind and mix them in an agate mortar, put them into a corundum crucible, pass nitrogen gas to drive out the air in the quartz tube before heating, sinter at 920°C for 3.5 hours in a nitrogen atmosphere, and cool Finally, grind evenly, pulverize and sieve to finally get the product. The X-ray diffraction pattern of the phosphor powder is shown in Figure 1, which is consistent wi...

Embodiment 2

[0032] Embodiment 2: Ba(Y 0.95 Ce 0.05 ) Ga 3 S 6 Synthesis of O phosphor powder:

[0033] BaCO 3 (analytical pure) 0.3946 grams;

[0034] Y 2 S 3 0.2603 grams;

[0035] Ga 2 S 3 0.7069 grams;

[0036] Ce 2 S 3 0.0188 grams;

[0037] Will Y 2 o 3 (99.99%), CeO 2 (99.99%) at 1200°C, reducing gas CS 2 Burn for 3 to 4 hours to get Y 2 S 3 , Ce 2 S 3 Raw materials; the Ga 2 o 3 (analytical pure) at 900 ° C, reducing gas CS 2 Ignite for 2 to 3 hours to obtain Ga 2 S 3 raw material. Weigh the obtained raw materials according to the above composition, grind and mix them in an agate mortar, put them into a corundum crucible, pass nitrogen gas to drive out the air in the quartz tube before heating, sinter at 950°C for 2 hours in a nitrogen atmosphere, and cool Finally, grind evenly, pulverize and sieve to finally get the product. The sample is excited under 395nm ultraviolet light and emits blue light. Excitation and emission spectra at room te...

Embodiment 3

[0038] Embodiment 3: Sr(La 0.94 Ce 0.03 Eu 0.03 ) Ga 3 S 6 Synthesis of O phosphor powder:

[0039] SrO (analytical pure) 0.2072 grams;

[0040] La 2 S 3 0.3516 grams;

[0041] Ga 2 S 3 0.7069 grams;

[0042] Ce 2 S 3 0.0113 grams;

[0043] EuS 0.0110 g;

[0044] La 2 o 3 (99.99%), CeO 2 (99.99%), Eu 2 o 3 (99.99%) at 1200°C, reducing gas CS 2 Burning for 3 to 4 hours at lower temperature to obtain La 2 S 3 , Ce 2 S 3 , EuS raw material; the Ga 2 o 3 (analytical pure) at 900 ° C, reducing gas CS 2 Ignite for 2 to 3 hours to obtain Ga 2 S 3 raw material. Weigh the obtained raw materials according to the above composition, grind and mix them in an agate mortar, put them into a corundum crucible, pass in argon gas to drive out the air in the quartz tube before heating, and sinter at 850°C for 3 hours in an argon atmosphere , after cooling, grind evenly, crush and sieve, and finally get the product. The sample is excited under 400nm ultra...

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Abstract

The invention discloses phosphor powder for a GaN-based light-emitting diode and the preparation method thereof. The chemical formula of the phosphor powder is A(M1-x-yCexREy)Ga3S6O, in which A is at least one of the elements Ca, Sr or Ba; M is at least one of the elements La, Y or Gd;RE represents at least one of the elements Eu,Pr,Sm,Tb or Dy; x and y represent respectively mol percentage of Ce and RE compared with M; 0 less than x less than 1,0 less than or equal to y less than 1. The raw material is exactly weighed according to the chemical formula in preparing the phosphor powder. The weighed raw material is grinded fine, mixed uniformly, seared for 1 to 4 hours in the condition of shielding gas atmosphere and temperature of 850 to 1100 degrees centigrade, cooled, smashed and screened and then the product is prepared. Under the excitation of 300 to 500nm ray (especially 400nm and 460nm ray), the phosphor powder is capable of emitting 420 to 700nm rays. The phosphor powder is applicable for near ultraviolet or blue light LED chip. And the invention has the characteristics of broad excitation spectrum range, high luminescent brightness and simple preparation method, etc.

Description

technical field [0001] The invention relates to the field of white light LEDs, in particular to a fluorescent powder for GaN-based light-emitting diodes and a preparation method thereof. Background technique [0002] GaN-based light-emitting diode (Light Emitting Diode) is a new type of light-emitting device, which has small size (multiple pieces, multiple combinations), low calorific value (no heat radiation), low power consumption (low voltage, low current start-up) ), long life (more than 10000h), fast response (can be operated at high frequency), environmental protection (shock resistance, impact resistance is not easy to break, waste can be recycled) and can be flat packaged, easy to develop into light and small products, etc., can be widely used Used in various lighting facilities, including indoor lights, traffic lights, traffic lights, street lights, automobile tail lights, direction lights, brake lights, outdoor super large screens, display screens and advertising b...

Claims

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Application Information

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IPC IPC(8): C09K11/78H01L33/00H01L33/50
Inventor 王静余瑞金张新民袁海滨张剑辉苏锵
Owner SUN YAT SEN UNIV
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