343results about How to "High emission intensity" patented technology

To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3m+a+4/3b−2/3o), and further containing boron and/or fluorine.

To provide a phosphor having a broad emission spectrum in a range of blue color (in a peak wavelength range from 400 nm to 500 nm), having a broad flat excitation band in a near ultraviolet/ultraviolet range, and having excellent emission efficiency and emission intensity/luminance. The phosphor is given as a general composition formula expressed by MmAaBbOoNn:Z, (where element M is the element having bivalent valency, element A is the element having tervalent valency, element B is the element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element acting as an activator), satisfying 5.0<(a+b)/m<9.0, 0≦a/m≦2.0, 0≦o≦n, n=2/3m+a+4/3b−2/3o, and has an emission spectrum with a maximum peak in the wavelength range from 400 nm to 500 nm under an excitation of the light in a wavelength range from 250 nm to 430 nm.

An organic light-emitting device cutting off ambient light while keeping emission intensity includes a pair of first and second electrodes opposed to each other; and a plurality of organic semiconductor layers layered and disposed between the first and second electrodes, wherein the organic semiconductor layers include an organic light-emitting layer, the organic semiconductor device further comprising a light-scattering layer layered and disposed between the organic light-emitting layer and at least one of the first and second electrodes. The light-scattering layer includes: organic materials having carrier injection and transport characteristics of transporting electrons and/or holes; and plural particles dispersed among the organic materials so that light emitted from the organic light-emitting layer is passed therethrough.

To provide a phosphor having an emission spectrum with a broad peak in a range from green color to yellow color, having a broad and flat excitation band capable of using lights of broad range from near ultraviolet/ultraviolet to blue lights as excitation lights, and having excellent emission efficiency and luminance. The problem is solved by providing the phosphor expressed by a general composition formula MmAaBbOoNn:Z (where element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is one or more kinds of elements acting as the activator.), satisfying 4.0<(a+b)/m<7.0, a/m=0.5, b/a>2.5, n>o, n=2/3m+a+4/3b−2/3o, and having an emission spectrum with a peak wavelength of 500 nm to 650 nm when excited by light in a wavelength range from 300 nm to 500 nm.

Light emitting diodes are disclosed that utilize multiple conversion materials in the conversion process in order to achieve the desired emission color point. Different embodiments of the present invention can comprise different phosphor types in separate layers on, above or around one or a plurality of LED chips to achieve the desired light conversion. The LEDs can then emit a desired combination of light from the LED chips and conversion material. In some embodiments, conversion materials can be applied as layers of different phosphor types in order of longest emission wavelength phosphor first, followed by shorter emission phosphors in sequence as opposed to applying in a homogeneously mixed phosphor converter. The conversion material layers can be applied as a blanket over the LED chips and the area surrounding the chip, such as the surface of a submount holding the LED chips.

To provide a phosphor given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is one or more kind of activating agent, satisfying m>0, a>0, b>0, o≧0, and n>0), with a change rate of a ratio of element B atoms to the total numbers of atoms being smaller by 10% or the change rate of oxygen atoms to the total numbers of atoms being smaller by 40% in a range from a particle surface up to depth 2000 nm, having a broad emission spectrum in a range of blue color, having a broad flat excitation band in a range of near ultraviolet/ultraviolet, and having excellent emission efficiency, emission intensity, and luminance.

The present invention provides a method for manufacturing a group III nitride semiconductor light emitting element, with which warping can be suppressed upon the formation of respective layers on the substrate, a semiconductor layer including a light emitting layer of excellent crystallinity can be formed, and excellent light emission characteristics can be obtained; such a group III nitride semiconductor light emitting element; and a lamp. Specifically disclosed is a method for manufacturing a group III nitride semiconductor light emitting element, in which an intermediate layer, an underlayer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer are laminated in sequence on a principal plane of a substrate, wherein a substrate having a diameter of 4 inches (100 mm) or larger, with having an amount of warping H within a range from 0.1 to 30 μm and at least a part of the edge of the substrate warping toward the principal plane at room temperature, is prepared as the substrate; the X-ray rocking curve full width at half maximum (FWHM) of the (0002) plane is 100 arcsec or less and the X-ray rocking curve FWHM of the (10-10) plane is 300 arcsec or less, in a state where the intermediate layer has been formed on the substrate and where thereafter the underlayer and the n-type contact layer are formed on the intermediate layer; and furthermore the n-type cladding layer, the light emitting layer, the p-type cladding layer, and the p-type contact layer are formed on the n-type contact layer.

An object of the present invention is to provide a light-storing fluorescent spherical powder that exhibits a high emission intensity, emits light for a prolonged time, and has an excellent workability even when it is added to synthetic resin or the like. There is provided a light-storing fluorescent spherical powder that contains an alkaline earth metal aluminate as a main component and a transition metal element such as lanthanoid as an activator, in which the powder comprises a spherical powder. There is further provided a process of manufacturing a light-storing fluorescent spherical powder that includes preparing as a raw material a light-storing fluorescent powder that has been previously synthesized or a light-storing fluorescent precursor powder that has been produced by pre-reaction of a synthetic raw material of a light-storing fluorescent material, and passing the prepared raw material through a region heated to a temperature higher than a melting point of a light-storing fluorescent material, thereby forming the raw material into spherical shape.

A wavelength-converting member with high emission intensity and that is superior in weather resistance and reliability is obtained. There is provided a phosphor on which a cleaning treatment and/or a coating treatment are/is performed is contained in a glass material having a composition of SiO₂: 30 to 50%, Li₂O: 0 to 15%, Na₂O: 0 to 10%, K₂O 0 to 10%, Li₂O+Na₂O+K₂O: 20 to 30%, B₂O₃:5 to 15%. MgO: 0 to 10%, BaO: 0 to 10% , CaO: 0 to 10%, SrO: 0 to 10%, Al₂O₃: 0 to 10%, ZnO: 0 to 15%, TiO₂: 10 to 20%, Nb₂O₅: 1 to 5%, La₂O₃: 0 to 5%, and TiO₂+Nb₂O₅+La₂O₃: 11 to 20% by mole percentage.

The invention provides a novel white light luminescence device. The device comprises an excitation light source and a fluorescent layer configured to the upstream of the excitation light source. The fluorescent layer comprises a fluorescent powder group and a transparent material. The fluorescent powder group comprises a first fluorescent powder which is excited by the excitation light source to emit white light or visible light, and a second fluorescent powder which is simultaneously excited by the excitation light source to emit infrared light. In the invention, a white light color with highphotosynthetic efficiency can be provided, simultaneously, a high-efficient infrared wave band can be provided, and a new application characteristic is provided for an LED illumination light source.

A blue fluorescent material having excellent durability and a high luminance, especially one emitting a high-luminance light by the action of electron rays. The fluorescent material comprises inorganic crystals having a crystal structure which is an AlN crystalline, AlN polycrystalline, or AlN solid-solution crystalline structure. It is characterized in that the inorganic crystals contain at least europium in solution and have an oxygen content of 0.4 mass % or lower and that the fluorescent material emits fluorescence derived from divalent europium ions upon irradiation with an excitation source. More preferably, the fluorescent material contains a given metallic element and silicon. Also provided are a process for producing the fluorescent material and an illuminator including the blue fluorescent material.

An object of the present invention is to provide a light emitting device which is high in emission intensity and stable, that is to say, a light emitting device in which when an LED or LD having an emission peak at 380 nm to 410 nm is used as an excitation light source of the light emitting device, the emission intensity of a red phosphor does not largely change to some deviation of the emission wavelength of the LED or LD to maintain not only brightness but also a balance at the time when mixed with a blue and green phosphors.

The present invention relates to a light emitting device characterized in that the device comprises a phosphor which has Eu³⁺ as a luminescent center ion, in which a minimum emission intensity within the excitation wavelength range of 380 nm to 410 nm in an excitation spectrum is 65% or more of a maximum emission intensity, and which has an emission efficiency at 400 nm of 20% or more, and a semiconductor light emitting element which emits light in the region from near-ultraviolet light to visible light.

Provided is a chemically and thermally stable phosphor having different emission characteristics than the conventional phosphor and exhibiting high emission intensity if combined with an LED of 470 nm or less. The phosphor of the present invention is represented by a composition formula: M_dA_eD_fE_gX_h (d+e+f+g+h=1; M is one or more kinds of elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb; A is one or more kinds of elements selected from Mg, Ca, Sr, and Ba; D is one or more kinds of elements selected from Si, Ge, Sn, Ti, Zr, and Hf; E is one or more kinds of elements selected from B, Al, Ga, In, Sc, Y, and La; and X is one or more kinds of elements selected from O, N, and F) and parameters d, e, f, g, and h satisfy the predetermined condition.