The invention provides a
silicon-based avalanche photoelectric
detector array and a manufacturing method thereof. According to a device main structure of the
silicon-based avalanche photoelectric
detector array, a
wafer structure with an epitaxial Si layer is formed on a SiO2 / Si
composite substrate, the
wafer structure is an epitaxial Si / SiO2 / Si
material structure forming by a bonding technology,the
silicon-based avalanche photoelectric
detector array based on the
wafer structure comprises the SiO2 / Si
composite substrate, avalanche photoelectric detector (APD) units arranged on the SiO2 / Si
composite substrate in an array, and a trench structure formed surrounding the APD units, and the sidewall and bottom of the trench structure are deposited with a high-reflection
dielectric film. Thus,the high-reflection
dielectric film of the trench structure blocks lateral light
crosstalk from adjacent APD units, a SiO2 bonding interface based on the SiO2 / Si composite substrate blocks secondary photons from entering the adjacent
APDs via the substrate, the
crosstalk path among the APD units is
cut off effectively, the integral performance of the APD array is improved, the APD array of a largearea array can be integrated compactly, and the
batch production performance is improved.