356results about How to "Improve batch productivity" patented technology

The invention relates to a small and low-voltage operable dielectric waveguide device. First and second electrode are embedded in a dielectric part and are formed to be thinner than a skin depth for a frequency of electromagnetic wave propagating along a first dielectric part included in the dielectric part. Thereby, even if the first and second electrodes are arranged to be in contact with the first dielectric part, the propagating electromagnetic wave can transmit the first and second electrodes, and therefore the electromagnetic wave can propagate without being cut off and there is no influence on waveguide modes of the electromagnetic wave. Further, in a state where a transmission loss due to the embedded of the electrode is suppressed, an electric field with large electric field strength can be applied to the first dielectric part by the first and second electrodes, and a small and low-voltage operable dielectric waveguide device can be achieved.

A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.

This invention provides an aligned single-layer carbon nanotube bulk structure, which comprises an assembly of a plurality of aligned single-layer carbon nanotube and has a height of not less than 10 μm, and an aligned single-layer carbon nanotube bulk structure which comprises an assembly of a plurality of aligned single-layer carbon nanotubes and has been patterned in a predetermined form. This structure is produced by chemical vapor deposition (CVD) of carbon nanotubes in the presence of a metal catalyst in a reaction atmosphere with an oxidizing agent, preferably water, added thereto. An aligned single-layer carbon nanotube bulk structure, which has realized high purify and significantly large scaled length or height, its production process and apparatus, and its applied products are provided.

A sandwich structure (III) which has a core material (I) and, arranged on the both surfaces of said core material (I), a fiber-reinforced material (II) composed of a continuous reinforcing fiber (A) and a matrix fiber (B), wherein the above core material (I) comprises a void. The void is formed by bubbles of a foamed material or, the core is composed of a discontinuous reinforcing fiber and a thermoplastic resin and the void is formed by interstices formed at crossings of filaments of said reinforcing fiber.