A method with three embodiments of manufacturing
metal lines and solder bumps using
electroless deposition techniques. The first embodiment uses a PdSix seed layer 50 for
electroless deposition. The PdSix layer 50 does not require activation. A
metal line is formed on a
barrier layer 20 and an adhesion layer 30. A
Palladium silicide seed layer 50 is then formed and patterned. Ni, Pd or Cu is electroless deposited over the
Palladium silicide layer 50 to form a
metal line. The second embodiment selectively electrolessly deposits metal 140 over an Adhesion layer 130 composed of Poly Si, Al, or Ti. A
photoresist pattern 132 is formed over the adhesion layer. A metal layer 140 of Cu or Ni is electrolessly deposited over the adhesion layer. The
photoresist layer 132 is removed and the exposed portion of the adhesion layer 130 and the underlying barrier metal layer 120 are etched thereby forming a metal line. The third embodiment electroless deposits metal over a metal
barrier layer that is roughen by chemical mechanical
polishing. A solder bump is formed using an
electroless deposition of Cu or Ni by: depositing an Al layer 220 and a barrier metal layer 230 over a substrate 10. The
barrier layer 230 is polished and activated. Next, the aluminum layer 220 and the barrier metal layer 230 are patterned. A metal layer 240 is electroless deposited. Next a solder bump 250 is formed over the electroless metal layer 240.