The invention discloses a preparation method of topological semimetal material bismuth telluride. The method comprises the following steps: Bi and Te with purity of 5N are used as starting materials,the materials are weighed according to a molar ratio of the Bi to the Te of 2:3, the weighed materials fill a quartz crucible cleaned by ultra-pure water, the crucible is vacummized to 10<-3> Pa, andopening sealing is performed; the quartz crucible is put into a swing furnace, wherein the temperature is 700-1000 DEG C, the swing speed is 10-20 cycles / min, and the swing time is 15-30 min; and thesynthesized Bi2Te3 source material is put in a crucible descending furnace for deposition growth at a temperature of 750-880 DEG C, and after the temperature is preserved for 3-5 h, deposition growthis performed, wherein the growth speed is 2-5 mm / day, and the growth is performed for 2-5 days. The topological semimetal provided by the invention has only one thin conductive layer, electron spin iseasily manipulated through a surface state, and therefore possibility of spin of a device is improved.