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Topological semi-metal material bismuth telluride and preparation method thereof

A semi-metal material, bismuth telluride technology, applied in chemical instruments and methods, polycrystalline material growth, self-solidification method, etc., to achieve the effect of improving the possibility

Inactive Publication Date: 2019-05-07
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Stanford University in the United States has verified the lossless electron transport characteristics of this large-gap two-dimensional topological structure through first-principles, and the research results have been published in Nature. There are no reports on two-dimensional topological structure materials and applications in China.

Method used

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  • Topological semi-metal material bismuth telluride and preparation method thereof
  • Topological semi-metal material bismuth telluride and preparation method thereof

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preparation example Construction

[0015] The preparation method of topological semimetal material bismuth telluride of the present invention comprises the following steps:

[0016] (1) Use Bi and Te of 5N purity as initial raw material, carry out weighing according to molar ratio Bi:Te=2:3, put into the quartz crucible that ultrapure water cleans, the crucible is evacuated to 10 -3 Pa level and sealed;

[0017] (2) Put the quartz crucible into a swing furnace at a temperature of 700°C to 1000°C, a swing speed of 10 turns / min to 20 turns / min, and a swing time of 15 to 30 minutes;

[0018] (3) The synthesized Bi 2 Te 3 The source material is placed in a crucible descending furnace for deposition and growth at a temperature of 750°C to 880°C. After 3 to 5 hours of holding time, the deposition and growth begin. The growth rate is 2 mm / day to 5 mm / day, and the growth days are 2 to 5 days .

[0019] The topological semimetal material bismuth telluride prepared by the above preparation method.

[0020] Bismuth t...

Embodiment 1

[0022] Select Bi and Te with 5N purity as initial raw materials, weigh 20 g according to the stoichiometric ratio of molar ratio Bi:Te=2:3, put into a quartz crucible cleaned with ultrapure water, and vacuumize the crucible to 10 -3 Pa level and sealed; put the quartz crucible into a swing furnace at a temperature of 700°C, a swing speed of 10 cycles / min, and a swing time of 15 minutes; the synthesized Bi 2 Te 3 The source material is placed in a crucible descending furnace for deposition and growth at a temperature of 750 ° C. After 3 hours of heat preservation, the deposition and growth begin. The growth rate is 2 mm / day, and the growth days are 2 days.

Embodiment 2

[0024] Select Bi and Te with 5N purity as initial raw materials, weigh 20 g according to the stoichiometric ratio of molar ratio Bi:Te=2:3, put into a quartz crucible cleaned with ultrapure water, and vacuumize the crucible to 10 -3 Pa level and sealed; put the quartz crucible into a swing furnace at a temperature of 850°C, a swing speed of 15 cycles / min, and a swing time of 23 minutes; the synthesized Bi 2 Te 3 The source material was placed in a crucible descending furnace for deposition and growth at a temperature of 815°C. After 4 hours of heat preservation, the deposition and growth began. The growth rate was 3.5 mm / day, and the growth days were 3.5 days.

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Abstract

The invention discloses a preparation method of topological semimetal material bismuth telluride. The method comprises the following steps: Bi and Te with purity of 5N are used as starting materials,the materials are weighed according to a molar ratio of the Bi to the Te of 2:3, the weighed materials fill a quartz crucible cleaned by ultra-pure water, the crucible is vacummized to 10<-3> Pa, andopening sealing is performed; the quartz crucible is put into a swing furnace, wherein the temperature is 700-1000 DEG C, the swing speed is 10-20 cycles / min, and the swing time is 15-30 min; and thesynthesized Bi2Te3 source material is put in a crucible descending furnace for deposition growth at a temperature of 750-880 DEG C, and after the temperature is preserved for 3-5 h, deposition growthis performed, wherein the growth speed is 2-5 mm / day, and the growth is performed for 2-5 days. The topological semimetal provided by the invention has only one thin conductive layer, electron spin iseasily manipulated through a surface state, and therefore possibility of spin of a device is improved.

Description

technical field [0001] The invention belongs to the technical field of solid-state energy storage, in particular to a bismuth telluride topological semimetal material and a preparation method thereof. Background technique [0002] At present, chemical energy storage technology has encountered the bottleneck problem of breaking through high energy storage density and high-quality specific energy. However, advanced technology fields such as aerospace and space continue to put forward higher requirements for energy storage capabilities. Therefore, development around physical energy storage technology The research and development of new energy storage technology is very necessary. [0003] Atlas semi-metal material is a kind of α-Sn as the main baseline material. During the deposition and growth process, a two-dimensional topological structure with a large energy gap is obtained, and electrons conduct resistance-free conduction at the edge of the two-dimensional topological stru...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/02C30B29/46
Inventor 张丽丽任保国王泽深
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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