Composite material, quantum dot light emitting diode and preparation method of quantum dot light emitting diode

A composite material and electron track technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of low carrier transmission efficiency, achieve the effects of improving luminous efficiency, avoiding agglomeration, and improving electrical conductivity

Pending Publication Date: 2022-07-01
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a composite material, a quantum dot light-emitting diode and a preparation method thereof, aiming at solving the problem that the carrier transport efficiency of the existing inorganic metal oxide is still relatively low as a charge transport material. low problem

Method used

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  • Composite material, quantum dot light emitting diode and preparation method of quantum dot light emitting diode
  • Composite material, quantum dot light emitting diode and preparation method of quantum dot light emitting diode
  • Composite material, quantum dot light emitting diode and preparation method of quantum dot light emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0104] FeN in this example 4 The preparation steps of the composite material compounded with ZnO are as follows:

[0105] 1), first add an appropriate amount of zinc acetate into 50ml of ethanol to form a solution with a total concentration of 0.5M. Then stir and dissolve at 70 ° C, add the lye (molar ratio, OH) prepared by dissolving potassium hydroxide in 10 ml of ethanol - : Zn 2+ =2:1, pH=12). Continue to stir at 70 °C for 4 h to obtain a homogeneous transparent solution. Subsequently, after the solution was cooled, it was precipitated with ethyl acetate, and after centrifugation, it was dissolved with a small amount of ethanol, and the steps of precipitation and dissolution were repeated 3 times, and dried to obtain ZnO nanoparticles;

[0106] 2), the appropriate amount of FeCl 3and ammonium chloride were dissolved in 10 ml of dimethyl sulfoxide (molar ratio, Fe:N=1:5), after ultrasonic dissolution, the mixed solution was transferred to a high-pressure high-temperatu...

Embodiment 2

[0109] In this example, MnN 4 with TiO 2 The preparation steps of the composite composite material are as follows:

[0110] 1) First, add an appropriate amount of titanium nitrate into 50ml of methanol to form a solution with a total concentration of 0.8M. Then stir and dissolve at 60°C, add sodium hydroxide dissolved in 10ml methanol solution (molar ratio, OH - : Ti 4+ = 2.5:1). Continue stirring at 60°C for 4h to obtain a homogeneous solution. Then, after the solution was cooled, it was precipitated with ethyl acetate, and after centrifugation, it was dissolved with a small amount of methanol, and the steps of precipitation and dissolution were repeated 3 times, and then dried to obtain TiO 2 Nanoparticles;

[0111] 2), the appropriate amount of MnCl 2 and urea were dissolved in 10 mL of N,N-dimethylformamide (molar ratio, Mn:N=1:6), after ultrasonic dissolution, the mixed solution was transferred to a high-pressure high-temperature reaction kettle. First, apply a hi...

Embodiment 3

[0114] CoN in this embodiment 4 The preparation steps of the composite material compounded with NiO are as follows:

[0115] 1), first add an appropriate amount of nickel chloride to 50ml of propanol to form a solution with a total concentration of 1M. Then stir and dissolve at 80 ° C, add the alkaline solution (molar ratio, OH) prepared by dissolving lithium hydroxide in 10 ml propanol. - : Ni 2+ =2:1, pH=12). Continue to stir at 80°C for 4h to obtain a homogeneous solution. Subsequently, after the solution was cooled, it was precipitated with ethyl acetate, and after centrifugation, it was dissolved with a small amount of ethanol, and the steps of precipitation and dissolution were repeated 3 times, and dried to obtain NiO nanoparticles;

[0116] 2), the appropriate amount of CoCl 2 and urea were dissolved in 10 mL of tetrahydrofuran (molar ratio, Co:N=1:7), after ultrasonic dissolution, the mixed solution was transferred to a high-pressure high-temperature reaction ket...

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Abstract

The invention discloses a composite material, a quantum dot light-emitting diode and a preparation method of the quantum dot light-emitting diode. The composite material comprises metal oxide nanoparticles and MN4 type semimetal, the metal oxide nanoparticles and the MN4 type semimetal are combined, and M in the MN4 type semimetal is a metal atom with the outermost layer being a 3d electron orbit. After the MN4 type semimetal and the metal oxide nanoparticles are compounded, the metal oxide nanoparticles can be uniformly dispersed by utilizing the characteristic that surface metal atoms in the semimetal are easily coordinated with hydroxyl ligands on the surfaces of the metal oxide nanoparticles. The MN4 type semimetal has high conductivity, and the conductivity of the MN4 type semimetal can be improved by compounding the MN4 type semimetal with the metal oxide nanoparticles. The band gap of the MN4 type semimetal is relatively small, so that electrons of the composite material combined with the metal oxide nanoparticles are more easily excited from a valence band to a conduction band, the carrier concentration is increased, carrier transmission is facilitated, and the luminous efficiency of the device is improved.

Description

technical field [0001] The invention relates to the field of quantum dot light emitting diodes, in particular to a composite material, a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] Semiconductor quantum dots (QDs) have a quantum size effect, and the desired specific wavelength of light can be achieved by adjusting the size of the quantum dots. The wavelength tuning range of CdSe QDs can range from blue to red. In conventional inorganic electroluminescent devices, electrons and holes are injected from the cathode and anode, respectively, and then recombine in the light-emitting layer to form excitons to emit light. [0003] In recent years, inorganic semiconductors have become a hot research topic as electron transport layers or hole transport layers. Nano ZnO, TiO 2 , SnO 2 It is a wide-bandgap semiconductor material, which has attracted the attention of many researchers due to its advantages such as quantum confinement...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/115H10K50/16H10K50/15H10K2102/00H10K71/00
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION
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