75 results about "Plasma current" patented technology

A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.

A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.

A filtered cathodic-arc plasma source of lower plasma losses and higher output plasma current to input current efficiency is disclosed. Plasma filtering is accomplished in a right angle bend magnetic filter arranged to include the effects of at least three added magnetic coils located at the right angle bend of the filter path. These magnetic coils and other filter attributes, including an array of transverse fins and a magnetic cusp trap in the filter path, achieve desirable magnetic flux paths, lower plasma collision losses and reduced undesired particle output from the plasma filter. Multiple cathode sources, multiple plasma output ports, Larmour radius influence, equipotential magnetic flux lines and electron / ion interaction considerations are also included in the plasma source. Application of the plasma source to film coating processes is included.

In an embodiment of the invention there is a cyclotronic actuator utilizing a high-voltage plasma driver connected to a first electrode. A second electrode is grounded and the two are isolated from each other by a dielectric plate. A magnet is positioned beneath the dielectric plate such that a coaxial dielectric barrier discharge plasma is formed outwardly between the first electrode across the dielectric plate. The magnet positioned beneath the dielectric plate introduces a magnetic field transverse to the plasma current path, such that the plasma discharge discharges radially and the local magnetic field is oriented vertically in a direction perpendicular to the dielectric plate to create a Lorentz Force, which forces the plasma discharge to move radially outwardly in a curved radial streamer mode pattern.