164 results about "Plasma confinement" patented technology

This invention provides an apparatus and method for injecting gas within a plasma reactor and tailoring the distribution of an active species generated by the remote plasma source over the substrate or wafer. The distribution may be made more or less uniform, wafer-edge concentrated, or wafer-center concentrated. A contoured plate or profiler is provided for modifying the distribution. The profiler is an axially symmetric plate, having a narrow top end and a wider bottom end, shaped to redistribute the gas flow incident upon it. The profiler is situated below an input port within the plasma reactor chamber and above the wafer. The method for tailoring the distribution of the active species over the substrate includes predetermining the profiler diameter and adjusting the profiler height over the substrate. A coaxial injector tube, for the concurrent injection of activated and non-activated gas species, allows gases (or gas mixtures) to be delivered in an axially symmetric manner whereby one gas can be excited in a high density RF plasma, while the other gas can be prevented from excitation and / or dissociation caused by exposure to the plasma or heated surfaces in the source apparatus. The gas admixture that is not to be excited or dissociated prior to contact with the wafer surface is shielded from direct exposure to the RF field surrounding the plasma confinement tube. The tube walls are also shielded from the infrared energy emitted from the plasma. The profiler is used in conjunction with the coaxial injector tube for redistributing the excited gases emerging from the injector tube, while allowing the non-excited gases to pass through its center.

A movable plasma confinement structure configured for confining plasma in a plasma processing chamber during plasma processing of a substrate is provided. The movable plasma confinement structure includes a movable plasma-facing structure configured to surround the plasma. The movable plasma confinement structure also includes a movable electrically conductive structure disposed outside of the movable plasma-facing structure and configured to be deployed and retracted with the movable plasma-facing structure as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. The movable plasma-facing structure is disposed between the plasma and the movable electrically conductive structure during the plasma processing such that RF current from the plasma flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing.

Various embodiments of the present invention relate to a plasma electron source apparatus. The apparatus comprises a cathode discharge chamber in which a plasma is generated, an exit hole provided in said cathode discharge chamber from which electrons from the plasma are extracted by an accelerating field provided between said cathode discharge chamber and an anode, at least one plasma confinement device, and a switching mechanism for switching the at least one plasma confinement device between a first value allowing for electron extraction from the plasma and a second value prohibiting electron extraction from the plasma. Associated methods are also provided.

An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The target tracking system may provide information enabling the creation of a laser firing control signal, and may comprise a droplet detector comprising a collimated light source directed to intersect a point on a projected delivery path of the target, having a respective oppositely disposed light detector detecting the passage of the target through the respective point, or a detector comprising a linear array of a plurality of photo-sensitive elements aligned to a coordinate axis, the light from the light source intersecting a projected delivery path of the target, at least one of the which may comprise a plane-intercept detection device. The droplet detectors may comprise a plurality of droplet detectors each operating at a different light frequency, or a camera having a field of view and a two dimensional array of pixels imaging the field of view. The apparatus and method may comprise an electrostatic plasma containment apparatus providing an electric plasma confinement field at or near a target ignition site at the time of ignition, with the target tracking system providing a signal enabling control of the electrostatic plasma containment apparatus. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap. The apparatus and method may comprise a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of the target ignition site to confine the plasma to the target ignition site, which may be pulsed and may be controlled using outputs from the target tracking system.

An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The target tracking system may provide information enabling the creation of a laser firing control signal, and may comprise a droplet detector comprising a collimated light source directed to intersect a point on a projected delivery path of the target, having a respective oppositely disposed light detector detecting the passage of the target through the respective point, or a detector comprising a linear array of a plurality of photo-sensitive elements aligned to a coordinate axis, the light from the light source intersecting a projected delivery path of the target, at least one of the which may comprise a plane-intercept detection device. The droplet detectors may comprise a plurality of droplet detectors each operating at a different light frequency, or a camera having a field of view and a two dimensional array of pixels imaging the field of view. The apparatus and method may comprise an electrostatic plasma containment apparatus providing an electric plasma confinement field at or near a target ignition site at the time of ignition, with the target tracking system providing a signal enabling control of the electrostatic plasma containment apparatus. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap. The apparatus and method may comprise a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of the target ignition site to confine the plasma to the target ignition site, which may be pulsed and may be controlled using outputs from the target tracking system.

A plasma processing chamber having advanced coating for the showerhead and for an extended bottom electrode. The extended bottom electrode can be formed by one or more of the focus ring, cover ring, and plasma confinement ring. The extended electrode can be formed using a one-piece composite cover ring. The composite cover ring may be made of Al2O3 and include a Y2O3 plasma resistant coating. The plasma confinement ring may include a flow equalization ion shield that may also be provided with the plasma resistant coating. The plasma resistant coating of the extended electrode may have elements matching that of the showerhead.

Various embodiments of the present invention relate to a plasma electron source apparatus. The apparatus comprises a cathode discharge chamber in which a plasma is generated, an exit hole provided in said cathode discharge chamber from which electrons from the plasma are extracted by an accelerating field provided between said cathode discharge chamber and an anode, at least one plasma confinement device, and a switching mechanism for switching the at least one plasma confinement device between a first value allowing for electron extraction from the plasma and a second value prohibiting electron extraction from the plasma. Associated methods are also provided.

A method and apparatus for processing a bevel edge is provided. A substrate is placed in a bevel processing chamber and a passivation layer is formed on the substrate only around a bevel region of the substrate using a passivation plasma confined in a peripheral region of the bevel processing chamber. The substrate may undergo a subsequent semiconductor process, during which the bevel edge region of the substrate is protected by the passivation layer. Alternatively, the passivation layer may be patterned using a patterning plasma formed in an outer peripheral region of the processing chamber, the patterning plasma being confined by increasing plasma confinement. The passivation layer on outer edge portion of the bevel region is removed, while the passivation layer on an inner portion of the bevel region is maintained. The bevel edge of the substrate may be cleaned using the patterned passivation layer as a protective mask.

Techniques and apparatus for substantially reducing and / or preventing the occurrence of plasma un-confinement events, including one or more of shielding a gap disposed between chamber components and along a RF current path with a dielectric shielding structure, shielding a sharp component structure with a dielectric shielding structure, and keeping the gap between adjacent pairs of plasma confinement rings smaller than the worst-case DeBye length for the plasma.

A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and further includes a plasma confinement arrangement. The plasma confinement arrangement includes a magnetic array disposed inside of the chamber. The magnetic array has a plurality of magnetic elements that are disposed around a plasma region within the process chamber.

Methods and systems for detecting a change in the state of plasma confinement within a capacitively coupled RF driven plasma processing chamber are disclosed. In one or more embodiments, the plasma unconfinement detection methods employ an analog or digital circuit that can actively poll the RF voltage at the powered electrode in the form of an Electrostatic Chuck (ESC) as well as the open loop response of the power supply (PSU) responsible for chucking a wafer to ESC. The circuit provides a means detecting both a change in RF voltage delivered to the ESC as well as a change in the open loop response of the PSU. By simultaneously monitoring these electrical signals, the disclosed algorithm can detect when plasma changes from a confined to an unconfined state.

A metal coating is formed on the inside face of a first thermostructural composite material part presenting indentations forming channels, and also on the inside face of a second thermostructural composite material part for being applied against the inside face of the first part, and the first and second parts are assembled together by bonding said inside faces together by hot compression, in particular by hot isostatic pressing, thereby obtaining a thermostructural composite material cooling panel having integrated fluid flow channels. The invention is applicable to making heat exchanger walls such as the walls of combustion chambers in aircraft engines, or the diverging portions of rocket engines, or plasma confinement chambers in nuclear fusion reactors.

Methods and systems for detecting a change in the state of plasma confinement within a capacitively coupled RF driven plasma processing chamber are disclosed. In one or more embodiments, the plasma unconfinement detection methods employ an analog or digital circuit that can actively poll the RF voltage at the powered electrode in the form of an Electrostatic Chuck (ESC) as well as the open loop response of the power supply (PSU) responsible for chucking a wafer to ESC. The circuit provides a means detecting both a change in RF voltage delivered to the ESC as well as a change in the open loop response of the PSU. By simultaneously monitoring these electrical signals, the disclosed algorithm can detect when plasma changes from a confined to an unconfined state.

The embodiments of the present invention generally relate to a method and an apparatus to confine a plasma within a processing region in a plasma processing chamber. The apparatus may include an annular ring with a gap distance with the chamber wall at between about 0.8 inch to about 1.5 inch. In addition to the annular plasma confinement ring, the plasma can also be confined by reducing a voltage supplied to the top electrode by a voltage ratio during plasma processing and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support and the substrate, if the substrate is present during processing. The voltage ratio can be adjusted by changing the impedances of the substrate support and the dielectric seal surrounding the top electrode. Lowering top electrode voltage by a voltage ratio and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support reduce the amount of plasma got attracted to the grounded chamber walls and thus improves plasma confinement. This method of plasma confinement is called impedance confinement. Plasma confinement can be improved by using either the described annular ring, the impedance confinement scheme or a combination of both.

The invention provides a plasma constraint device for limiting plasma diffusion. The constraint device comprises at least one layer of cylindrical constraint cover, wherein each layer of the constraint cover is provided with a through hole so as to form a constraint passage. The invention also provides semiconductor processing equipment applying to the plasma constraint device, which comprises a reaction cavity, an upper electrode, a lower electrode and the plasma constraint device, wherein the constraint device is positioned in the reaction cavity and encircles the reaction zone between the upper electrode and the lower electrode so as to prevent the plasma from diffusing outside the constraint device. The plasma constraint device and the semiconductor processing equipment are convenient for mounting and maintenance and uneasy to destroy. Meanwhile, the plasma constraint device and the semiconductor processing equipment can reduce and even avoid particle pollution caused by the plasma outside the reaction zone, so as to increase product yield and prolong service life of parts in the reaction cavity.

A movable plasma confinement structure configured for confining plasma in a plasma processing chamber during plasma processing of a substrate is provided. The movable plasma confinement structure includes a movable plasma-facing structure configured to surround the plasma. The movable plasma confinement structure also includes a movable electrically conductive structure disposed outside of the movable plasma-facing structure and configured to be deployed and retracted with the movable plasma-facing structure as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. The movable plasma-facing structure is disposed between the plasma and the movable electrically conductive structure during the plasma processing such that RF current from the plasma flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing.

A combined pressure control / plasma confinement assembly configured for confining a plasma and for at least partially regulating pressure in a plasma processing chamber during plasma processing of a substrate is provided. The assembly includes a movable plasma confinement structure having therein a plurality of perforations and configured to surround the plasma when deployed. The assembly also includes a movable pressure control structure disposed outside of the movable plasma confinement structure such that the movable plasma confinement structure is disposed between the plasma and the movable pressure control structure during the plasma processing, the movable pressure control structure being deployable and retractable along with the movable plasma confinement structure to facilitate handling of the substrate, the movable pressure control structure being independently movable relative to the movable plasma confinement structure to regulate the pressure by blocking at least a portion of the plurality of perforations.

The invention offers a plasma processing unit equipped with plasma restraint device. The plasma restraint device contains many insulating elements which are set with intervals and form slender channels. Small parts of insulating elements have at least one conductive element inside. The conductive elements electric connect with each other and put to earth to form electric-field mask. The invention efficiently solves problems that cavity pollution of plasma processing unit led by plasma diffusing and secondary plasma discharge outside processing area.

An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.

A compact nuclear fusion reactor for use as a neutron source is described. The reactor comprises a toroidal plasma chamber (34) and a plasma confinement system (31) arranged to generate a magnetic field for confining a plasma in the plasma chamber (34). The plasma confinement system (31) is configured so that a major radius of the confined plasma is 0.75 m or less. The reactor is configure to operate with a plasma current of 2 MA or less. The magnetic field includes a toroidal component of 5 T or less. Despite these low values, the reactor can generate a neutron output of 1 MW or more.

A plasma discharge device is provided having features for enhanced thermal management and protection of dielectric materials in the device. The invention generally comprises a plasma confinement chamber constructed at least in part of dielectric materials, with a cooling instrument disposed in contact with the outer dielectric surfaces of the chamber for substantially uniform heat extraction. The cooling instrument may be embedded within an encapsulating material that enhances the uniformity of heat extraction from a dielectric plasma chamber. By improving the uniformity of heat extraction from the dielectric chamber of a plasma discharge device, the invention permits reliable operation of a plasma discharge device at significantly improved power levels.

The high density RF plasma source of this invention uses a special antenna configuration to launch waves at frequency such as 13,56MHz. The tunability of this antenna allows to adapt actively the coupling of the RF energy into an evolutive plasma as found in plasma processings in semiconductor manufacturing. This plasma source can be used for the following applications : plasma etching, deposition, sputtering systems, space propulsion, plasma - based sterilization , plasma abatement systems. In another embodiment, the plasma source is in conjunction with one or several process chambers , which comprise an array of magnets and RF coils too . These elements can be used, on one hand, for plasma confinement or the active plasma control (Plasma rotation ) thanks to feedback control approach , and one the other hand, for in situ NMR Monitoring or analysis such as moisture monitoring inside a process chamber , before or after the plasma process, or for in situ NMR Inspection of wafers or others workpieces.

An efficient compact nuclear fusion reactor for use as a neutron source or energy source is described. The reactor comprises a toroidal plasma chamber and a plasma confinement system arranged to generate a magnetic field for confining a plasma in the chamber. The plasma confinement system is configured so that a major radius of the confined plasma is 1.5m or less. The toroidal magnetic field is operated 5T or less and the plasma current is 5 MA or less. Despite this, [Alpha]-particles generated are confined in the plasma.

The invention relates to method and devices for producing stable hot plasma. In particular, the invention can be applied for realizing stable plasma in a thermonuclear reactor to provide energy source for power generation. In the method plasma is confined by pressure of AC magnetic field concentrated in a layer between plasma surface and surrounding conducting shell in which stabilizing feedback on the confined plasma is created by achieving conservation of the AC magnetic flux amplitude. The device for realization of the proposed method comprises a toroidal conducting shell filled with plasma, with AC voltages applied to insulated cuts in the shell made in poloidal and toroidal directions such that said AC magnetic field is created by AC currents in the shell and image currents on the plasma surface. The amplitudes and relative phases of said voltages are rather arbitrary, in particular they can be selected such that the resultant magnetic vector rotates in the plane tangential to the plasma surface with nearly circular polarization exerting nearly time independent magnetic pressure on the plasma.