This invention discloses an
ion implantation apparatus that has an
ion source and an
ion extraction means for extracting an
ion beam therefrom. The
ion implantation apparatus further includes an
ion beam sweeping-and-deflecting means disposed immediately next to the ion extraction means. The
ion implantation apparatus further includes a magnetic analyzer for guiding the
ion beam passed through the deflecting-and-sweeping means. The
mass analyzer is also used for selecting ions with
specific mass-to-charge ratio to pass through a
mass slit to project onto a substrate. The sweeping-and-deflecting means is applied to deflect the ion beam to project through the magnetic
mass analyzer and the mass slit for sweeping the ion beam over a surface of the substrate to carry out an
ion implantation. In a preferred embodiment, the ion implantation apparatus further includes a
plasma electron flood
system disposed between the mass slit and the substrate for projecting a plurality of electrons to the ion beam for preventing a space-charge and beam dispersion. In another preferred embodiment, the ion beam extraction and projecting
system of this invention further includes a divergent ion-beam extracting
optics for extracting an ion beam with a small divergent angle for projecting and diverging the ion beam as the ion beam is projected toward the
target surface.