Circuit arrays having cells with combinations of transistors and
nanotube switches. Under one embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each
cell is responsive to a
bit line, word line,
reference line, and release line. Bit lines are arranged orthogonally relative to word lines and each word line and
bit line are shared among a plurality of cells. Each
cell is selectable via the activation of the
bit line and word line. Each
cell includes a
field effect transistor coupled to a
nanotube switching element. The
nanotube switching element is switchable to at least two physical positions at least in part in response to electrical stimulation via the
reference line and release line. Information state of the cell is non-volatilely stored via the respective physical position of the nanotube switching element. Under another embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line, word line, and
reference line. Each word line and bit line are shared among a plurality of cells. Each cell is selectable via the activation of the bit line and word line. Each cell includes a
field effect transistor and a nanotube switching element. Each nanotube switching element includes a nanotube article positioned between a set
electrode and a release
electrode. The set
electrode may be electrically stimulated to electro-statically attract the nanotube article into contact with the set electrode and the release electrode may be electrically stimulated to electro-statically attract the nanotube article out of contact with the set electrode. Information state of the cell is non-volatilely stored via the respective physical position of the nanotube switching element. Cells are arranged as pairs with the nanotube switching elements of the pair being
cross coupled so that the set electrode of one nanotube switching element is coupled to the release electrode of the other and the release electrode of the one nanotube switching element being coupled to the set electrode of the other. The nanotube articles are coupled to the reference line, and the source of one
field effect transistor of a pair is coupled to the set electrode to one of the two nanotube switching elements and the source of the other
field effect transistor of the pair is coupled to the release electrode to the one of the two nanotube switching elements.