134 results about "Atomic species" patented technology

This invention provides an apparatus and method for injecting gas within a plasma reactor and tailoring the distribution of an active species generated by the remote plasma source over the substrate or wafer. The distribution may be made more or less uniform, wafer-edge concentrated, or wafer-center concentrated. A contoured plate or profiler is provided for modifying the distribution. The profiler is an axially symmetric plate, having a narrow top end and a wider bottom end, shaped to redistribute the gas flow incident upon it. The profiler is situated below an input port within the plasma reactor chamber and above the wafer. The method for tailoring the distribution of the active species over the substrate includes predetermining the profiler diameter and adjusting the profiler height over the substrate. A coaxial injector tube, for the concurrent injection of activated and non-activated gas species, allows gases (or gas mixtures) to be delivered in an axially symmetric manner whereby one gas can be excited in a high density RF plasma, while the other gas can be prevented from excitation and / or dissociation caused by exposure to the plasma or heated surfaces in the source apparatus. The gas admixture that is not to be excited or dissociated prior to contact with the wafer surface is shielded from direct exposure to the RF field surrounding the plasma confinement tube. The tube walls are also shielded from the infrared energy emitted from the plasma. The profiler is used in conjunction with the coaxial injector tube for redistributing the excited gases emerging from the injector tube, while allowing the non-excited gases to pass through its center.

A method for fabricating an integrated device, the method including, overlying a first crystalline layer onto a second crystalline layer to form a combined layer, wherein one of the first and second crystalline layers is an image sensor layer and at least one of the first and second crystalline layers has been transferred by performing an atomic species implantation, and wherein at least one of the first and second crystalline layers includes single crystal transistors.

A process for fabricating a hybrid substrate that has a defect trapping zone. The process includes the steps of forming or depositing a first insulator layer on a first substrate of semiconductor material; increasing roughness of the first insulator layer surface; depositing a second insulator layer on the roughened surface of the first insulator to form a trapping zone between the layers; bonding a second substrate onto the second insulator layer by molecular adhesion; and transferring an active layer formed by the implantation of atomic species into one of the substrates. The trapping zone is able to retain gaseous species present at the various interfaces of the hybrid substrate to limit the formation of defects on the surface of the active layer that is transferred.

A system and method for imaging a volume having a detector including a first atomic species with an absorption edge at a first wavelength. The system also includes a source having a second atomic species for emitting an ionizing energy. The second atomic species has a characteristic emission peak that substantially matches the absorption edge of the detector. A filter may be provided for blocking ionizing energy from the source in regions other than a region proximate the characteristic emission peak. Effective imaging with a lower radiation dose may be achieved with the system and method.

The present invention relates to a method of fabricating a semiconductor-on-insulator-type heterostructure that includes at least one insulating layer interposed between a receiver substrate of semiconductor material and an active layer derived from a donor substrate of semiconductor material. The method includes the steps of bonding and active layer transfer. Prior to bonding, an atomic species which is identical or isoelectric with the insulating layer material is implanted in the insulating layer. The implantation forms a trapping layer, which can retain gaseous species present in the various interfaces of the heterostructure, thereby limiting formation of defects on the surface of the active layer.