31results about How to "Small equivalent capacitance" patented technology

The invention provides a data driver and a display device including the same. The data driver includes a multi-channel sample / hold circuit electrically connected between a digital-to-analog converter and a buffer. The multi-channel sample / hold circuit includes a first sample / hold circuit connected to a first channel and a second sample / hold circuit connected to a second channel. The first sample / hold circuit performs a first driving operation and a second driving operation. The first driving operation includes sampling an analog data voltage as a buffer input voltage and maintaining the buffer input voltage during an nth horizontal time. The second driving operation includes inputting a buffer input voltage to an input terminal of the buffer during an (n + 1)-th horizontal time. The second sample / hold circuit performs a second driving operation during the nth horizontal time, and performs the first driving operation during the (n + 1) th horizontal time.

The invention discloses a groove power semiconductor element and manufacture method thereof. A gate structure of the groove power semiconductor element includes a gate insulation layer, a lamination layer and a gate. The gate insulation layer covers the inner wall face of a groove. The lamination layer covers the lower half part of the gate insulation layer. The gate is disposed in the groove andis isolated from the lamination layer and an epitaxial layer through the gate insulation layer. The gate includes a lower doping zone surrounded by the lamination layer and an upper doping zone disposed on the lamination layer and the doping zone. A PN interface is formed between the upper doping zone and the lower doping zone. The impurity concentration in the upper doping zone decreases gradually from the outer periphery of the upper doping zone towards the inner part of the upper doping zone. Since the PN interface can generate an interface capacitor connected with a parasite capacitor in series under reverse biased voltage, the equivalent capacitance of the gate / drain can be reduced.

This invention relates to an Al base laminated high overload piezoelectric driver including two serial mechanically and parallel electrically piezoelectric ceramic lamination layers and an Al foil base adhered in between, in which, part of the contact face of the base and the lamination layer is adhered by a conductive epoxide, the outer surfaces of the two piezoelectric ceramic layers are connected as one of the electrode and the Al foil base is the other, which introduces the Al foil base and applies a lateral extension mode of D31 to ensure its high ability of anti-pull, anti-cut and anti-over load.

The present invention relates to a signal transmission structure, mainly including reference plane, combination pad, conductive wire and conductive ball. The signal transmission structure utilizes the change of the form of the reference plane or conductive wire to relatively reduce the equivalent capacity of thue conductive ball and its adjacent signal path or relatively raise the equivalent induction of the conductive ball and its adjacent signal path so as to compensate the high equivalent capacity between the conductive ball and reference plane, and can make the conductive ball and its adjacent signal path have the better impedance matching to raise the completeness of the signal after which is passed through the conductive ball and its adjacent signal path.

The embodiments of the present invention provide a circuit for reducing the programming establishment time of a NAND flash memory, and a NAND flash memory. The circuit comprises: a detection module connected to the drive terminal of a word line in a NAND flash memory, wherein the detection module detects the voltage of the drive terminal of the word line when the word line is selected, and generates a detection voltage according to the voltage of the drive terminal of the word line; a trigger module, wherein the input terminal of the trigger module is connected to the output terminal of the detection module, the output terminal of the trigger module is connected to at least one charge pump corresponding to the unselected work line adjacent to the word line, the trigger module triggers at least one charge pump when the detection voltage is higher than a preset reference voltage so as to make the charge pump output a first voltage to the unselected work line adjacent to the word line, and the first voltage is higher than 0 V and is less than the programming voltage of the word line. With the embodiments of the present invention, the voltage establishment time of the selected word line can be effectively reduced so as to improve the programming speed of the NAND flash memory.

The invention discloses a motor and a casing assembly for the motor. The motor includes: a casing; a stator, the stator is arranged in the casing; a first end cover and a second end cover, the first end The cover and the second end cover are installed on the housing and are respectively located on both sides of the stator; the conducting member is arranged on the outer surface of the housing, and the first conducting member of the conducting member One end is connected with the first end cover and the second end of the conducting member is connected with a fastener connecting the housing and the second end cover. The motor according to the embodiment of the present invention can reduce the equivalent capacitance, thereby reducing the voltage difference to prevent abnormal noise and electric corrosion, and the conduction is reliable.

The present invention provides a radio frequency coplanar waveguide element based on a silicon base on an insulator and a preparation method thereof. The method comprises: 1) preparing the silicon base on an insulator, wherein the silicon base on the insulator includes a ground floor silicon, an insulating layer and a top silicon which are stacked in order, and the lower portion of the insulating layer is provided with at least one groove of the ground floor silicon corresponding to the position of the preparation of the radio frequency coplanar waveguide element; 2) defining a device area, removing the top chain of the device area, and exposing the upper surface of the insulating layer at the lower portion of the device area; and 3) preparing the radio frequency coplanar waveguide element. Based on the silicon base on the graphical insulator, the radio frequency coplanar waveguide element based on the silicon base on the insulator and the preparation method thereof obtain the coplanar waveguide with a substrate cavity through later period etching, the air medium in the cavity structure allows the equivalent capacitance of the substrate to be reduced and allow the equivalent resistance to be increased so as to eliminate fixed charge and movable charge in the SiO2 and the unfavorable factors, influencing microwave transmission, such as Si / SiO2 system interface state, trap charge and the like, and therefore the medium loss is reduced, and the transmission performance of the coplanar waveguide is improved.

The invention relates to a capacitive chip-loaded dual-mode substrate integrated waveguide bandpass filter, which comprises a first layer of metal plate, a first layer of dielectric plate, a second layer of metal plate, a second layer of layer dielectric plate and the third layer of metal plate, and fixedly connected in turn, the surface of the first layer of metal plate is provided with a microstrip to coplanar waveguide feeder structure, the second layer of metal plate includes four capacitive stickers sheet, the third layer of metal plate is fully metal-covered ground, the second layer of dielectric board is opened with a metallized blind hole, the top of the metallized blind hole and the bottom end of the capacitive patch Fixed connection, the bottom end of the metallized blind hole is fixedly connected to the top end of the metal-covered ground, the first layer of dielectric board and the second layer of dielectric board are provided with interconnected metal through holes, the The metal through hole communicates with the first-layer metal plate and the third-layer metal plate. The invention has the characteristics of being more miniaturized and capable of realizing high selectivity.

The invention relates to the field of semiconductor sensors and discloses a semiconductor radiation sensing device and a manufacturing method thereof. The sensing device comprises at least one radiation sensing unit, wherein each radiation sensing unit comprises a first substrate, a first columnar electrode and a second columnar electrode; the first substrate comprises a first surface and a second surface; the first columnar electrode comprises first metal posts and N-type doped silicon surrounding the first metal posts; the second columnar electrode comprises more than two second metal postsand P-type doped silicon surrounding the second metal posts; the first columnar electrode and the second columnar electrode are embedded into the first substrate and pass through the first surface and the second surface of the substrate; the more than two metal posts are arranged in an equilateral polygon mode; and the first columnar electrode is arranged at the geometric center of the equilateral polygon. According to the invention, the thin dead layer thickness of the sensing device, the smaller equivalent capacitance and the shorter signal drifting process can be realized, thus improving the energy resolution, reducing the response time and decreasing the lower limit of energy detection.

The invention provides a graphene light detector based on a metamaterial structure and relates to a light detector. The graphene light detector based on the metamaterial structure can achieve ultra-wide-band absorption. The graphene light detector is of a laminated structure and includes a metal layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer and a graphene layer in sequence from top to bottom in the vertical direction. In the horizontal direction, the graphene layers and the medium layers are grid-shaped strips, the strips are arranged cyclically, and bias voltage is added for each graphene layer and used for changing the refractive index of graphene so as to dynamically regulate and control the spatial refractive index of each graphene layer and further adjust the spatial absorptivity of the whole structure.

The invention discloses a SiCMOSFET parallel drive circuit with dynamic adjustment of gate-source impedance and active current sharing. The current is indirectly measured by measuring the voltage drop of the shunt; the isolation and differential amplification of the measurement signal are realized by using a differential amplification isolation circuit; the current difference is used The feedback circuit performs current difference processing and signal feedback; NPN transistors, resistors, and capacitors are used to form a gate-source low-impedance circuit, and combined with the feedback signal, the dynamic adjustment of the drive loop impedance is realized. The invention can effectively suppress the uneven current phenomenon caused by the inconsistency of device parameters and large stray inductance in the circuit, achieve the purpose of active current equalization, and has the characteristics of good adjustment performance, strong real-time performance and low cost.