31results about How to "Small equivalent capacitance" patented technology

The present invention proposes an ESD protection circuit with low input capacitance, suitable for an I / O pad. The ESD protection circuit includes a plurality of diodes and a power-rail ESD clamp circuit between power lines. The diodes are stacked and coupled between a first power line and the I / O pad. The ESD protection circuit between power lines is coupled between the first power line and a second power line. During normal operation, the diodes are reverse-biased and the ESD protection circuit between power lines is turned off. When an ESD event between the power line and the I / O pad occurs, the diodes are forward-biased, and the ESD protection circuit between power lines is turned on to conduct ESD current. The equivalent input capacitance of the ESD protection circuit of the present invention is very small, making it particularly suitable for the I / O port of high-frequency or high-speed IC.

The present disclosure relates to an electrosurgical apparatus to generate a dual plasma stream to perform electrosurgery on a surgical site on a patient. The apparatus and method of the present disclosure generates a hot gas jet to a surgical site by generating two plasma beams that are electrically up to 180 degrees out of phase from each other. Since each beam uses the other beam to establish plasma currents at a load, the combined dual plasma stream can be used on non-conductive surfaces, e.g., a tissue at the surgical site. Furthermore, by applying different flow rates to the plasma beams, various scanning effects by the hot gas jet can be achieved.

The invention provides an input and output circuit with small area, wherein, one or a plurality of parallelly connected circuit units and a static discharge protection circuit are arranged between a core circuit / a pre-driver and an input and output pad. An ex-core drive circuit and a resistance of an output end are arranged in each circuit unit, wherein, the static discharge protection circuit can avoid static discharge incidents on the input and output pad, and the resistance in each circuit unit realizes the static discharge barrier function so as to prevent static discharge current from entering corresponding drive circuits, thus leading transistors in the drive circuits not to be subjected to design rules of static discharge and realizing single finger layout to reduce the equivalent capacitance of the drive circuits. Therefore, the total areas of the drive circuits and the whole input and output circuit can be effectively reduced so as to realize the input and output circuit with small area.

The invention discloses a graphene photonic crystal terahertz amplifier and a regulating and control method thereof. Due to the characteristics that the conductivity of graphene at specific temperature and bias voltage is a negative value in a terahertz wave band, the graphene can be used as a terahertz wave gain medium, and the function of the terahertz amplifier can be achieved by using a periodic 'graphene-single crystal silicon layer' one-dimensional photonic crystal structure. According to the graphene photonic crystal terahertz amplifier, different bias voltages can be applied by alternatively introducing positive and negative electrodes to the graphene which is periodically arranged, and active regulation and control on terahertz wave amplification and working frequency are achieved. As the one-dimensional photonic crystal structure is combined with the terahertz gain characteristics of the graphene, due to the cascade connection of a plurality of pieces of graphene, and the photonic band gap, the slow light enhancement, the F-P effect and the mode competitive effect of the one-dimensional photonic crystal structure, the gain amplification coefficient and the Q-value of the terahertz waves in a single transmission mode can be effectively increased, and the single-frequency terahertz wave output with the high gain and high Q-value is achieved. The graphene photonic crystal terahertz amplifier works in a frequency band of 1-2THz, the working frequency can be tuned according to working voltage, the maximum output gain is greater than 30dB, the Q-value is greater than 50, and the graphene photonic crystal terahertz amplifier is a large-format high-performance terahertz amplifier.

The present invention relates to a signal transmission structure, mainly including reference plane, combination pad, conductive wire and conductive ball. The signal transmission structure utilizes the change of the form of the reference plane or conductive wire to relatively reduce the equivalent capacity of thue conductive ball and its adjacent signal path or relatively raise the equivalent induction of the conductive ball and its adjacent signal path so as to compensate the high equivalent capacity between the conductive ball and reference plane, and can make the conductive ball and its adjacent signal path have the better impedance matching to raise the completeness of the signal after which is passed through the conductive ball and its adjacent signal path.

The invention provides a multi-spectral camera device. The multi-spectral camera device comprises a laminated hybrid semiconductor device, wherein the laminated hybrid semiconductor device is used for performing channel separation on different wave bands in a three-dimensional space and comprises a first photoelectric diode and a second photoelectric diode, the first photoelectric diode is used for photoelectrically converting near-infrared light, the first photoelectric diode forms an infrared image detection array and comprises a substrate and an electron and / or hole depletion layer, the electron and / or hole depletion layer is formed in the substrate, the second photoelectric diode is arranged on the first photoelectric diode and is used for photoelectrically converting visible light, and the second photoelectric diode forms a visible light image detection array. With the multi-spectral camera device provided by the invention, the interference between the different photoelectric diodes is reduced or prevented, the integral performance is improved.

The invention provides a graphene light detector based on a metamaterial structure and relates to a light detector. The graphene light detector based on the metamaterial structure can achieve ultra-wide-band absorption. The graphene light detector is of a laminated structure and includes a metal layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer and a graphene layer in sequence from top to bottom in the vertical direction. In the horizontal direction, the graphene layers and the medium layers are grid-shaped strips, the strips are arranged cyclically, and bias voltage is added for each graphene layer and used for changing the refractive index of graphene so as to dynamically regulate and control the spatial refractive index of each graphene layer and further adjust the spatial absorptivity of the whole structure.

The invention relates to a capacitive patch loaded dual-mode substrate integrated waveguide band-pass filter, which comprises a first layer metal plate, a first layer dielectric plate, a second layermetal plate, a second layer dielectric plate and a third layer metal plate which are arranged in sequence from top to bottom and are fixedly connected in sequence, wherein a microstrip-to-coplanar waveguide feed line structure is arranged on the surface of the first layer metal plate, the second layer metal plate comprises four capacitive patches, the third layer metal plate is an all-metal-covered ground, and a metallized blind hole is formed in the second layer dielectric plate. The top end of the metallized blind hole is fixedly connected with the bottom end of the capacitive patch, the bottom end of the metallized blind hole is fixedly connected with the top end of the all-metal covered ground, metal through holes which are communicated with each other are formed in the first layer dielectric plate and the second layer dielectric plate, and the metal through holes are communicated with the first layer metal plate and the third layer metal plate. The waveguide band-pass filter has the characteristics of more miniaturization and capability of realizing high selectivity.

The present invention provides a transient voltage suppression device. The transient voltage suppression device comprises a substrate and a first transient voltage suppressor is provided. The substrate includes a device region and a seal-ring region. The seal-ring region surrounds the device region. A first transient voltage suppressor is located in the device region. The first transient voltage suppressor includes a first well region having a first conductivity type, a first doped region having a second conductivity type, and a second doped region having the second conductivity type. The first well region is located in the substrate of the device region. The first doped region is located in the first well region. The second doped region is located in the first well region. A third doped region having the second conductivity type is located in the substrate of the seal-ring region, and the third doped region is electrically connected to the first doped region.

The invention relates to a novel ozone generation device for producing ozone (O), which is characterized in that corona discharge polar plate strips are respectively arranged on the front and back planes of an insulating medium plate in a special matched arrangement and combination mode to form an open type novel creeping discharge ozone generation sheet. A novel ozone generating sheet and an insulating screen dielectric sheet are matched together to form an integrated module for generating ozone, the integrated module can be conveniently combined into various types of ozone generators, a developed novel amplitude modulation and pulse type alternating high-frequency high-voltage power supply can greatly reduce the invalid electric energy supply of various types of ozone generators, and has more remarkable energy-saving and consumption-reducing effects, so that the ozone concentration and yield can be greatly improved, and ozone can be produced at low cost.

The present invention provides a radio frequency coplanar waveguide element based on a silicon base on an insulator and a preparation method thereof. The method comprises: 1) preparing the silicon base on an insulator, wherein the silicon base on the insulator includes a ground floor silicon, an insulating layer and a top silicon which are stacked in order, and the lower portion of the insulating layer is provided with at least one groove of the ground floor silicon corresponding to the position of the preparation of the radio frequency coplanar waveguide element; 2) defining a device area, removing the top chain of the device area, and exposing the upper surface of the insulating layer at the lower portion of the device area; and 3) preparing the radio frequency coplanar waveguide element. Based on the silicon base on the graphical insulator, the radio frequency coplanar waveguide element based on the silicon base on the insulator and the preparation method thereof obtain the coplanar waveguide with a substrate cavity through later period etching, the air medium in the cavity structure allows the equivalent capacitance of the substrate to be reduced and allow the equivalent resistance to be increased so as to eliminate fixed charge and movable charge in the SiO2 and the unfavorable factors, influencing microwave transmission, such as Si / SiO2 system interface state, trap charge and the like, and therefore the medium loss is reduced, and the transmission performance of the coplanar waveguide is improved.

The invention discloses a self-neutralization device of an ionic liquid thruster, which is realized through control of a feedback circuit, and the feedback circuit is composed of a high-voltage isolation circuit, a sampling circuit, a control circuit, an electricity storage capacitor, an isolation resistor and the like. Accumulated charges are limited to a thruster and a high-voltage output end through the high-voltage isolation circuit, the charges are captured through the electricity storage capacitor and converted into voltage signals at the two ends of the capacitor, and the sampling circuit measures capacitor voltage through a voltage dividing method and transmits the capacitor voltage to the control circuit. The high-voltage isolation circuit changes the voltage value or the duty ratio of an output signal under the adjustment of the control circuit, so that the emission proportion of positive and negative ions of the thruster beam is changed, and the originally accumulated charge quantity is balanced. According to the device, the positive and negative ion emission proportion of the ionic liquid thruster can be autonomously balanced, self-neutralization work of the thruster can be maintained, the problem that a spacecraft is electrified due to charge accumulation is prevented, ionic liquid electrochemical reaction caused by charge imbalance is avoided, and the service life of the ionic liquid thruster is remarkably prolonged.

This invention relates to an Al base laminated high overload piezoelectric driver including two serial mechanically and parallel electrically piezoelectric ceramic lamination layers and an Al foil base adhered in between, in which, part of the contact face of the base and the lamination layer is adhered by a conductive epoxide, the outer surfaces of the two piezoelectric ceramic layers are connected as one of the electrode and the Al foil base is the other, which introduces the Al foil base and applies a lateral extension mode of D31 to ensure its high ability of anti-pull, anti-cut and anti-over load.

The invention relates to the technical field of information, and discloses an ultrafast electro-optical modulation device and method. The device comprises an electric conductor I, an electric conductor II and an electric conductor III, wherein the electric conductor I and the electric conductor II form an antenna structure; the antenna structure receives an external modulated electrical signal. The conductor III is positioned in the antenna structure; the third electric conductor is of a micro-nano structure, and a part with the curvature radius smaller than 10 nanometers exists on the micro-nano structure. The modulation method comprises the following steps: after light to be modulated is enhanced by the antenna structure, exciting at the third conductor to generate a localized spatial light field; the electric potential difference between the conductor I and the conductor II caused by the modulation electric signal affects the carrier density distribution in the micro-nano structure; the carrier density distribution changes to change the property of the spatial light field so as to modulate the light to be input. The device is suitable for modulation of visible light and infrared band light, has the advantages of ultra-fast modulation speed and ultra-low power consumption, is simple in structure, and facilitates secondary design optimization and integrated manufacturing.

The present invention relates to a signal transmission structure, mainly including reference plane, combination pad, conductive wire and conductive ball. The signal transmission structure utilizes the change of the form of the reference plane or conductive wire to relatively reduce the equivalent capacity of thue conductive ball and its adjacent signal path or relatively raise the equivalent induction of the conductive ball and its adjacent signal path so as to compensate the high equivalent capacity between the conductive ball and reference plane, and can make the conductive ball and its adjacent signal path have the better impedance matching to raise the completeness of the signal after which is passed through the conductive ball and its adjacent signal path.

The invention discloses a plasma ozone generating device, which belongs to the technical field of environmental protection. A plasma ozone generating device comprises a discharge electrode assembly and a tubular insulator; a dielectric barrier discharge gap is formed between adjacent discharge electrode assemblies; the discharge electrode assembly and the tubular insulator are placed coaxially to form a dielectric barrier discharge gap array. The invention has low capacitance, can adopt a higher frequency high-voltage power supply, and has higher efficiency and better reliability under the same power consumption condition. It can be combined with a high-frequency high-voltage power supply to form a unit module. It can be used alone, in series or in parallel. The modular design can be used in any combination to produce any ozone concentration and any ozone output. The product volume Shrink significantly. It can be widely used in waste gas treatment and other environmental protection technical fields.

The invention relates to a power supply management circuit with an automatic on-off switched capacitor network, and belongs to the field of power supply management circuits. The power supply management circuit comprises a rectification circuit, a switch capacitor network circuit, an auxiliary power supply and MOSFET control circuit, and a DC-DC buck voltage stabilization output circuit. The rectification circuit is a bridge type full-wave rectification circuit composed of four Schottky barrier diodes; the switch capacitor network circuit comprises a series charging loop composed of a high-withstand-voltage small-capacitance electrolytic capacitor and a low-forward-breakover-voltage high-reverse-breakdown-voltage diode, and the N-channel enhanced MOSFETs are connected with a parallel discharging loop composed of the positive electrode and the negative electrode of the electrolytic capacitor respectively. The method can be applied to the field of micro-power energy collection, the capacitor charging time is greatly shortened, and the energy utilization efficiency is improved.

The present invention discloses an artificial magnetic conductor unit, an artificial magnetic conductor structure and a planar antenna. The artificial magnetic conductor unit comprises a metal periodic patch, a metal via hole, a metal ground plate and a dielectric substrate, wherein the metal periodic patch consists of a square patch with a hollowed center and a spiral line, the spiral line is arranged at the hollowed center part of the square patch and is connected with the square patch, the spiral line is connected with the metal ground plate through the metal via hole, and the metal periodic patch is etched on the dielectric substrate. The artificial magnetic conductor structure comprises the plurality of artificial magnetic conductor units which are distributed periodically, and the planar antenna comprises an antenna oscillator and the artificial magnetic conductor structure arranged below the antenna oscillator. As the artificial magnetic conductor structure is used as a planar base station antenna reflecting plate, the height of the antenna can be reduced to 1 / 3 of the original height of the antenna, and the artificial magnetic conductor structure is simultaneously adapted to a plurality of polarized antennas, thus wide application range is achieved.

The embodiments of the present invention provide a circuit for reducing the programming establishment time of a NAND flash memory, and a NAND flash memory. The circuit comprises: a detection module connected to the drive terminal of a word line in a NAND flash memory, wherein the detection module detects the voltage of the drive terminal of the word line when the word line is selected, and generates a detection voltage according to the voltage of the drive terminal of the word line; a trigger module, wherein the input terminal of the trigger module is connected to the output terminal of the detection module, the output terminal of the trigger module is connected to at least one charge pump corresponding to the unselected work line adjacent to the word line, the trigger module triggers at least one charge pump when the detection voltage is higher than a preset reference voltage so as to make the charge pump output a first voltage to the unselected work line adjacent to the word line, and the first voltage is higher than 0 V and is less than the programming voltage of the word line. With the embodiments of the present invention, the voltage establishment time of the selected word line can be effectively reduced so as to improve the programming speed of the NAND flash memory.

The invention discloses a motor and a casing assembly for the motor. The motor includes: a casing; a stator, the stator is arranged in the casing; a first end cover and a second end cover, the first end The cover and the second end cover are installed on the housing and are respectively located on both sides of the stator; the conducting member is arranged on the outer surface of the housing, and the first conducting member of the conducting member One end is connected with the first end cover and the second end of the conducting member is connected with a fastener connecting the housing and the second end cover. The motor according to the embodiment of the present invention can reduce the equivalent capacitance, thereby reducing the voltage difference to prevent abnormal noise and electric corrosion, and the conduction is reliable.

The invention discloses a groove power semiconductor element and manufacture method thereof. A gate structure of the groove power semiconductor element includes a gate insulation layer, a lamination layer and a gate. The gate insulation layer covers the inner wall face of a groove. The lamination layer covers the lower half part of the gate insulation layer. The gate is disposed in the groove andis isolated from the lamination layer and an epitaxial layer through the gate insulation layer. The gate includes a lower doping zone surrounded by the lamination layer and an upper doping zone disposed on the lamination layer and the doping zone. A PN interface is formed between the upper doping zone and the lower doping zone. The impurity concentration in the upper doping zone decreases gradually from the outer periphery of the upper doping zone towards the inner part of the upper doping zone. Since the PN interface can generate an interface capacitor connected with a parasite capacitor in series under reverse biased voltage, the equivalent capacitance of the gate / drain can be reduced.

The invention discloses a graphene photonic crystal terahertz amplifier and a regulating and control method thereof. Due to the characteristics that the conductivity of graphene at specific temperature and bias voltage is a negative value in a terahertz wave band, the graphene can be used as a terahertz wave gain medium, and the function of the terahertz amplifier can be achieved by using a periodic 'graphene-single crystal silicon layer' one-dimensional photonic crystal structure. According to the graphene photonic crystal terahertz amplifier, different bias voltages can be applied by alternatively introducing positive and negative electrodes to the graphene which is periodically arranged, and active regulation and control on terahertz wave amplification and working frequency are achieved. As the one-dimensional photonic crystal structure is combined with the terahertz gain characteristics of the graphene, due to the cascade connection of a plurality of pieces of graphene, and the photonic band gap, the slow light enhancement, the F-P effect and the mode competitive effect of the one-dimensional photonic crystal structure, the gain amplification coefficient and the Q-value of the terahertz waves in a single transmission mode can be effectively increased, and the single-frequency terahertz wave output with the high gain and high Q-value is achieved. The graphene photonic crystal terahertz amplifier works in a frequency band of 1-2THz, the working frequency can be tuned according to working voltage, the maximum output gain is greater than 30dB, the Q-value is greater than 50, and the graphene photonic crystal terahertz amplifier is a large-format high-performance terahertz amplifier.

The present invention provides a radio frequency coplanar waveguide element based on a silicon base on an insulator and a preparation method thereof. The method comprises: 1) preparing the silicon base on an insulator, wherein the silicon base on the insulator includes a ground floor silicon, an insulating layer and a top silicon which are stacked in order, and the lower portion of the insulating layer is provided with at least one groove of the ground floor silicon corresponding to the position of the preparation of the radio frequency coplanar waveguide element; 2) defining a device area, removing the top chain of the device area, and exposing the upper surface of the insulating layer at the lower portion of the device area; and 3) preparing the radio frequency coplanar waveguide element. Based on the silicon base on the graphical insulator, the radio frequency coplanar waveguide element based on the silicon base on the insulator and the preparation method thereof obtain the coplanar waveguide with a substrate cavity through later period etching, the air medium in the cavity structure allows the equivalent capacitance of the substrate to be reduced and allow the equivalent resistance to be increased so as to eliminate fixed charge and movable charge in the SiO2 and the unfavorable factors, influencing microwave transmission, such as Si / SiO2 system interface state, trap charge and the like, and therefore the medium loss is reduced, and the transmission performance of the coplanar waveguide is improved.

The invention relates to a capacitive chip-loaded dual-mode substrate integrated waveguide bandpass filter, which comprises a first layer of metal plate, a first layer of dielectric plate, a second layer of metal plate, a second layer of layer dielectric plate and the third layer of metal plate, and fixedly connected in turn, the surface of the first layer of metal plate is provided with a microstrip to coplanar waveguide feeder structure, the second layer of metal plate includes four capacitive stickers sheet, the third layer of metal plate is fully metal-covered ground, the second layer of dielectric board is opened with a metallized blind hole, the top of the metallized blind hole and the bottom end of the capacitive patch Fixed connection, the bottom end of the metallized blind hole is fixedly connected to the top end of the metal-covered ground, the first layer of dielectric board and the second layer of dielectric board are provided with interconnected metal through holes, the The metal through hole communicates with the first-layer metal plate and the third-layer metal plate. The invention has the characteristics of being more miniaturized and capable of realizing high selectivity.

The invention relates to the field of semiconductor sensors and discloses a semiconductor radiation sensing device and a manufacturing method thereof. The sensing device comprises at least one radiation sensing unit, wherein each radiation sensing unit comprises a first substrate, a first columnar electrode and a second columnar electrode; the first substrate comprises a first surface and a second surface; the first columnar electrode comprises first metal posts and N-type doped silicon surrounding the first metal posts; the second columnar electrode comprises more than two second metal postsand P-type doped silicon surrounding the second metal posts; the first columnar electrode and the second columnar electrode are embedded into the first substrate and pass through the first surface and the second surface of the substrate; the more than two metal posts are arranged in an equilateral polygon mode; and the first columnar electrode is arranged at the geometric center of the equilateral polygon. According to the invention, the thin dead layer thickness of the sensing device, the smaller equivalent capacitance and the shorter signal drifting process can be realized, thus improving the energy resolution, reducing the response time and decreasing the lower limit of energy detection.

The invention discloses a wide-band radio frequency power amplifier with a standby mode, a chip and a communication terminal. The wide-band radio frequency power amplifier comprises a depletion type transistor, an enhancement transistor and a switch; the depletion type transistor is connected according to a common source mode, a grid is used as input end of the wide-band radio frequency power amplifier, and a drain is used as the source of the enhancement transistor; the enhancement transistor is connected according to a common grid mode, and the drain is used as an output end of the wide-band radio frequency power amplifier; and one end of the switch is connected with the grid of the enhancement transistor, and the other end is grounded. According to the wide-band radio frequency power amplifier provided by the invention, by means of the novel and smart common source and common grid structure, the equivalent capacitance of the input end caused by the Miller effect is effectively reduced, thereby effectively improving the pole frequency and the bandwidth of the wide-band radio frequency power amplifier. Due to the implementation of the standby mode, the power consumption level of the wide-band radio frequency power amplifier is greatly reduced.

The invention provides a graphene light detector based on a metamaterial structure and relates to a light detector. The graphene light detector based on the metamaterial structure can achieve ultra-wide-band absorption. The graphene light detector is of a laminated structure and includes a metal layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer, a graphene layer, a medium layer and a graphene layer in sequence from top to bottom in the vertical direction. In the horizontal direction, the graphene layers and the medium layers are grid-shaped strips, the strips are arranged cyclically, and bias voltage is added for each graphene layer and used for changing the refractive index of graphene so as to dynamically regulate and control the spatial refractive index of each graphene layer and further adjust the spatial absorptivity of the whole structure.

The invention discloses a SiCMOSFET parallel drive circuit with dynamic adjustment of gate-source impedance and active current sharing. The current is indirectly measured by measuring the voltage drop of the shunt; the isolation and differential amplification of the measurement signal are realized by using a differential amplification isolation circuit; the current difference is used The feedback circuit performs current difference processing and signal feedback; NPN transistors, resistors, and capacitors are used to form a gate-source low-impedance circuit, and combined with the feedback signal, the dynamic adjustment of the drive loop impedance is realized. The invention can effectively suppress the uneven current phenomenon caused by the inconsistency of device parameters and large stray inductance in the circuit, achieve the purpose of active current equalization, and has the characteristics of good adjustment performance, strong real-time performance and low cost.