Wide-band radio frequency power amplifier with standby mode, chip and communication terminal

Abstract

The invention discloses a wide-band radio frequency power amplifier with a standby mode, a chip and a communication terminal. The wide-band radio frequency power amplifier comprises a depletion type transistor, an enhancement transistor and a switch; the depletion type transistor is connected according to a common source mode, a grid is used as input end of the wide-band radio frequency power amplifier, and a drain is used as the source of the enhancement transistor; the enhancement transistor is connected according to a common grid mode, and the drain is used as an output end of the wide-band radio frequency power amplifier; and one end of the switch is connected with the grid of the enhancement transistor, and the other end is grounded. According to the wide-band radio frequency power amplifier provided by the invention, by means of the novel and smart common source and common grid structure, the equivalent capacitance of the input end caused by the Miller effect is effectively reduced, thereby effectively improving the pole frequency and the bandwidth of the wide-band radio frequency power amplifier. Due to the implementation of the standby mode, the power consumption level of the wide-band radio frequency power amplifier is greatly reduced.

Description

technical field [0001] The invention relates to a radio frequency power amplifier, in particular to a broadband radio frequency power amplifier with a standby mode, and also to a chip and a communication terminal including the broadband radio frequency power amplifier, belonging to the technical field of radio frequency integrated circuits. Background technique [0002] Broadband RF power amplifiers refer to RF power amplifiers that do not require tuning over a wide frequency range. It generally uses broadband components such as transmission lines and transformers as the interstage network and output network of the amplifier. Its work efficiency is lower than that of tuned RF amplifiers, but it is convenient to improve reliability and simplify maintenance and implementation in the case of rapidly changing frequency for communication. auto-adjust. [0003] In existing broadband radio frequency power amplifiers, single-transistor amplifiers connected in the form of a common s...

AI Technical Summary

Problems solved by technology

Its bandwidth is usually limited by the equivalent capacitance and resistance at the input, where a large part of the input capacitance comes from the parasitic capacitance (CGD) between the input (gate) and output (drain) of the single-transistor amplifier, due to the The existence of the Le effect, the equivalent capacitance of this part of the parasitic capacitance at the input limits the bandwidth of this amplifier

[0004] On the other hand, in a high-power RF power amplifier, a large quiescent current is usually required, such as 100mA. For a 5V-powered RF circuit, the power consumption of the RF power amplifier itself will reach 500mW, which is very considerable. power consumption

In many cases, we do not always need the RF power amplifier to amplify the input signal, so when the RF power amplifier is not required to work, the quiescent current of the RF power amplifier itself causes a serious waste of power consumption

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