490 results about "Semiconductor sensor" patented technology

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

A semiconductor device includes a substrate; a gate electrode formed on the substrate; a gate insulating film covering the gate electrode; a carbon nanotube disposed above the gate electrode and coming in contact with the gate insulating film; and a source electrode and a drain electrode formed apart from one another in a longitudinal direction of the carbon nanotube.

An apparatus for capturing images. In one embodiment, the apparatus comprises: a coded lens array including a plurality of lenses arranged in a coded pattern and with opaque material blocking array elements that do not contain lenses; and a light-sensitive semiconductor sensor coupled to the coded lens array and positioned at a specified distance behind the coded lens array, the light-sensitive sensor configured to sense light transmitted through the lenses in the coded lens array.

A semiconductor memory device includes: a semiconductor substrate; a stacked body provided on the semiconductor substrate and having a plurality of insulator layers and a plurality of conductive layers alternately stacked; a semiconductor layer provided inside a through-hole formed so as to pass through the stacked body and extending in a stacking direction of the insulator layers and the conductive layers; and a charge trap layer provided between the conductive layer and the semiconductor layer. A lower part in the semiconductor layer is narrower than an upper part therein, and at least the lowermost layer in the conductive layers is thinner than the uppermost layer therein.

Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.

A Semiconductor sensor device for the detection of target molecules and molecular interactions, based on Silicon-on-Insulator (SOI) technology.

A semiconductor sensor, solar cell or emitter or a precursor therefore having a substrate and textured semiconductor layer deposited onto the substrate. The layer can be textured as grown on the substrate or textured by replicating a textured substrate surface. The substrate or first layer is then a template for growing and texturing other semiconductor layers from the device. The textured layers are replicated to the surface from the substrate to enhance light extraction or light absorption. Multiple quantum wells, comprising several barrier and quantum well layers, are deposited as alternating textured layers. The texturing in the region of the quantum well layers greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. This is the case in nitride semiconductors grown along the polar [0001] or [000-1] directions.

The invention provides an electrostatic spinning nanofiber membrane as well as a preparation method thereof. The electrostatic spinning nanofiber membrane provided by the invention comprises a fiber membrane obtained by electrostatically spinning a high-melting-point polymer and a fiber membrane obtained by electrostatically spinning a low-melting-point polymer, wherein the difference on the melting points of the high-melting-point polymer and the low-melting-point polymer is not less than 10 DEG C. The electrostatic spinning nanofiber membrane provided by the invention is multipurpose and can be applied to the fields such as biomedicines, energy and chemical industry, gas and liquid filtration, waterproofness and windproofness, windproofness and heat insulation, moisture permeability and ventilation, environmental management and semiconductor sensors. According to the electrostatic spinning nanofiber membrane provided by the invention, electrostatic spinning is respectively carried out on the high-melting-point polymer and the low-melting-point polymer, and the high-melting-point polymer fiber membrane and the low-melting-point polymer fiber membrane obtained are composited and hot-pressed to obtain the electrostatic spinning nanofiber membrane. The preparation method provided by the invention is high in production efficiency and low in energy consumption, and is suitable for industrial production.

A device for monitoring an elevator area utilizes a three-dimensional semiconductor sensor for detecting three-dimensional image information. The sensor includes a light source that is mounted so that the elevator area to be monitored is disposed in the illuminated area of the light source, a sensor group that is mounted in such a manner that it receives reflected light, and a processing chip for converting the electrical signals into image information. In addition, the device includes a processing device that is connected with the semiconductor sensor in order to make available three-dimensional image information. The processing device processes the image information in order to obtain state information representing the state of the elevator area to be monitored.

A device for monitoring an elevator area utilizes a three-dimensional semiconductor sensor for detecting three-dimensional image information. The sensor includes a light source that is mounted so that the elevator area to be monitored is disposed in the illuminated area of the light source, a sensor group that is mounted in such a manner that it receives reflected light, and a processing chip for converting the electrical signals into image information. In addition, the device includes a processing device that is connected with the semiconductor sensor in order to make available three-dimensional image information. The processing device processes the image information in order to obtain state information representing the state of the elevator area to be monitored.

A protective structure for a semiconductor sensor integrated in a semiconductor substrate for use in a state that is in direct contact with a measuring medium has a semiconducting layer that is applied to the semiconductor substrate, a metal layer and an insulating layer. The insulating layer is disposed between the semiconducting layer and the metal layer and electrically insulates same.

A semiconductor device module is provided that prevents adhesion defects from causing in bonding a semiconductor sensor chip to a sensor stage with an adhesive and improving the reliability thereof. The semiconductor device module includes a sensor stage and a semiconductor optical sensor chip mounted on the sensor stage. The sensor stage includes a U-groove formed in an upper central surface portion of a bottom wall thereof. The sensor chip is bonded to the sensor stage with a thermosetting and UV-curing adhesive coated in the U-groove. The U-groove, includes an island-shaped flat pedestal located at a central bottom portion of the U-groove for mounting the sensor chip thereon. Pins are preferably disposed on both sides of the pedestal to hold the sensor chip horizontally, and the side walls of the U-groove 3b are preferably slanted such that the adhesive coated in the U-groove is prevented from splashing to the outside.

A semiconductor device is designed such that a semiconductor sensor chip having a diaphragm for detecting pressure variations based on the displacement thereof is fixed onto the upper surface of a substrate having a rectangular shape, which is covered with a cover member so as to form a hollow space embracing the semiconductor sensor chip between the substrate and the cover member. Herein, the substrate is sealed with a molded resin such that chip connection leads packaging leads are partially exposed externally of the molded resin; the chip connection leads are electrically connected to the semiconductor sensor chip and are disposed in line along one side of the semiconductor sensor chip; and the packaging leads are positioned opposite the chip connection leads by way of the semiconductor sensor chip. Thus, it is possible to downsize the semiconductor device without substantially changing the size of the semiconductor sensor chip.

An apparatus for capturing images. In one embodiment, the apparatus comprises: a coded lens array including a plurality of lenses arranged in a coded pattern and with opaque material blocking array elements that do not contain lenses; and a light-sensitive semiconductor sensor coupled to the coded lens array and positioned at a specified distance behind the coded lens array, the light-sensitive sensor configured to sense light transmitted through the lenses in the coded lens array.

An apparatus for capturing images. In one embodiment, the apparatus comprises: a coded lens array including a plurality of lenses arranged in a coded pattern and with opaque material blocking array elements that do not contain lenses; and a light-sensitive semiconductor sensor coupled to the coded lens array and positioned at a specified distance behind the coded lens array, the light-sensitive sensor configured to sense light transmitted through the lenses in the coded lens array.

A semiconductor device is designed such that a semiconductor sensor chip having a diaphragm for detecting pressure variations based on the displacement thereof is fixed onto the upper surface of a substrate having a rectangular shape, which is covered with a cover member so as to form a hollow space embracing the semiconductor sensor chip between the substrate and the cover member. Herein, the substrate is sealed with a molded resin such that chip connection leads packaging leads are partially exposed externally of the molded resin; the chip connection leads are electrically connected to the semiconductor sensor chip and are disposed in line along one side of the semiconductor sensor chip; and the packaging leads are positioned opposite the chip connection leads by way of the semiconductor sensor chip. Thus, it is possible to downsize the semiconductor device without substantially changing the size of the semiconductor sensor chip.

An electronic wireless tire pressure monitoring apparatus is provided to install on an inflation valve on a tire for a direct signal transmission and a reliable detection. A pressure sensor is configured as a chip type semiconductor sensor and directly wire-bonded to a circuit board. Meanwhile, the pressure sensor is fixed by the pinch pin and the pinch pin holder in place, thereby defining an airtight chamber to allow for an accurate detection of the tire pressure with the pressure sensor. Moreover, the pinch pin and the pinch pin holder are used as electrically conducting means for power supply when the tire pressure detector is screwed on the tire valve. A disconnection is easily achieved when unscrewed. Therefore, the power-saving effect is achieved and no signals are falsely transmitted.

A semiconductor pixel unit for sensing near-infrared light, and for optionally simultaneously sensing visible light. The pixel unit comprises a single substrate with a first semiconductor region and a second semiconductor region electrically separated by an insulating region, for example a buried oxide layer. The pixel unit is adapted for generating a lateral electrical field in the second region for facilitating transport of photoelectrons generated in the second region by near-infrared light passing through the first region and the insulating region.

Provided is a semiconductor sensor device which is manufactured by an MEMS technology wherein machining technology and / or material technology is combined with semiconductor technology for detecting and measuring various physical quantities. In the semiconductor sensor device, cracks which generate in a cap chip and a molding resin are eliminated and air-tightness between a semiconductor sensor chip and the cap chip is ensured. The cracks due to vibration applied when being cut can be eliminated by having the circumference side surface of the cap chip as a wet-etched surface. Furthermore, insulation is ensured by coating the cap chip side surface with an insulating protection film.

The invention relates to a semiconductor module with a semiconductor sensor chip and an associated method. The sensor chip has a sensor region, and nonsensitive regions of the sensor chip are embedded in a nontransparent plastic package molding compound. The sensor region of the sensor chip is operably coupled to the external surroundings of the module via an opening in the nontransparent plastic package molding compound. The opening in the molding compound is formed by laser ablation.

A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

A power semiconductor device includes: a semiconductor substrate having a plurality of trenches formed in an upper surface thereof; a buried insulating film; a buried field plate electrode; a control electrode; a first main electrode provided on a lower side of the semiconductor substrate; and a second main electrode provided on an upper side of the semiconductor substrate. The semiconductor substrate includes: a first semiconductor; a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type; a fourth semiconductor layer; and a fifth semiconductor layer. The buried insulating film is thicker than a gate insulating film. At least one of the second semiconductor layer and the third semiconductor layer has a portion with its sheet dopant concentration varying along depth direction of the semiconductor substrate. The sheet dopant concentration in the third semiconductor layer is higher than the sheet dopant concentration in the second semiconductor layer in an upper part of the portion with varying sheet dopant concentration, and the sheet dopant concentration in the third semiconductor layer is lower than the sheet dopant concentration in the second semiconductor layer in a lower part of the portion.

An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

A high-speed, high-resolution, broadband dynamic infrared scene generator based on semiconductor transducer conversion of visible spectrum scene images into infrared spectrum images. Wavelength conversion is accomplished in the semiconductor material through absorption of visible spectrum energy by valence electrons in a subsurface layer of the semiconductor material and photogeneration by valence band to conduction band electron transfer occurring within about one diffusion length of the semiconductor material surface. The semiconductor material used, for example Germanium or Silicon provides a band gap energy value that is smaller than the quantum energy level of the optical emission. Temperature of the semiconductor material may be maintained at a selected level above or below that of the infrared scene. Infrared images of higher frequency content than are achievable with conventional thermal heating infrared converters are accomplished. The invention thus includes down conversion of visible generated light in order to develop a semiconductor pixel-less Dynamic Infrared Scene Projector capable of simulating high-speed broadband IR scenery.

The invention relates to the technical field of fiber sensing, and especially to a pre-pumped pulse and Gray code based BOTDA instrument. The BOTDA instrument comprises a narrow-linewidth semiconductor sensor, a coupler, a first erbium doped fiber amplifier, a first polarization controller, a single sideband modulator, a microwave source, an optical isolator, a sensing fiber, an optical annular device, a second erbium doped fiber amplifier, a polarization scrambler, an electro-optical intensity modulator, a second polarization controller, an arbitrary waveform generator, an optical filter, a photoelectric detector and a signal collecting and processing system. On the premise that the high spatial resolution of a BOTDA system is maintained, the BOTDA instrument ensures the sensing distance and the measuring precision of the system, and improves the sensing performance of the system.

A semiconductor pressure sensing apparatus includes a metallic stem having a diaphragm and a semiconductor sensor bonded to the diaphragm. The semiconductor sensor includes a gauge section and first and second bonding pads. The gauge section is configured to be deformed according to a deformation of the diaphragm. The first and second bonding pads are respectively connected to different positions of the gauge section so that an electrical resistance between the first and second bonding pads can change with a change in the deformation of the diaphragm. The gauge section is formed to a semiconductor layer of an silicon-on-insulator substrate. The semiconductor sensor is directly bonded to the diaphragm by activating contact surfaces between the semiconductor sensor and the diaphragm.