146results about How to "Reduce input capacitance" patented technology

A series of gate drive circuits for MESFETs are provided. The gate drive circuits are intended to be used in switching regulators where at least one switching device is an N-channel MESFET. For regulators of this type, the gate drive circuits provide gate drive at the correct voltage to ensure that MESFETs are neither under driven (resulting in incorrect circuit operation) nor over driven (resulting in MESFET damage or excess current or power loss).

A bipolar junction transistor built with a mesh structure of cells provided on a semiconductor body is disclosed. The mesh structure has at least one emitter cell with a first type of implant. At least one emitter cell has at least one side coupled to at least one cell with a first type of implant to serve as collector of the bipolar. The spaces between the emitter and collector cells are the intrinsic base of a bipolar device. At least one emitter cell has at least one vortex coupled to at least one cell with a second type of implant to serve as the extrinsic base of the bipolar. The emitter, collector, or base cells can be arbitrary polygons as long as the overall geometry construction can be very compact and expandable. The implant regions between cells can be separated with a space. A silicide block layer can cover the space and overlap into at least a portion of both implant regions.

An integrated device includes a voltage mode transmit driver for matching an output impedance to an output transmission line based on a binary code, an input termination module configured for matching an input impedance to an input transmission line based on an input impedance calibration value using thermometer-based decoding. The voltage mode transmit driver includes, for each differential output signal, a resistor network circuit having pull-up circuits and pull-down circuits for changing the voltage on the differential output signal, and having binary weighted resistance values relative to each other. The input termination module includes pull-up circuits and pull-down circuits having inverse hyperbolic resistance values relative to each other, and using thermometer-based decoding to ensure a linear change in input impedance during transitions in the input impedance calibration value. A calibration circuit generates the binary code and the input impedance calibration value based on replicas of the pull-up and pull-down circuits.

An Electro-Static Discharge (ESD) protection using at least one I/O pad with at least one mesh structure of diodes provided on a semiconductor body is disclosed. The mesh structure has a plurality of cells. At least one cell can have a first type of implant surrounded by at least one cell with a second type of implant in at least one side of the cell, and at least cell can have a second type of implant surrounded by at least one cell with a first type of implant in at least one side of the cell. The two types of implant regions can be separated with a gap. A silicide block layer (SBL) can cover the gap and overlap into the both implant regions to construct P/N junctions on the polysilicon or active-region body on an insulated substrate. Alternatively, the two types of implant regions can be isolated by LOCOS, STI, dummy gate, or SBL on silicon substrate. The regions with the first and the second type of implants can be coupled to serve as the first and second terminal of a diode, respectively. The mesh structure can have a first terminal coupled to the I/O pad and a first terminal coupled to a first supply voltage.

A silicon-on-insulator (SOI) gated diode and non-gated junction diode are provided. The SOI gated diode has a PN junction at the middle region under the gate, which has more junction area than a normal diode. The SOI non-gated junction diode has a PN junction at the middle region thereof, and also has more junction area than a normal diode. The SOI diodes of the present invention improve the protection level offered for electrical overstress (EOS)/electrostatic discharge (ESD) due to the low power density and heating for providing more junction area than normal ones. The I/O ESD protection circuits, which comprise primary diodes, a first plurality of diodes, and a second plurality of diodes, all of which are formed of the present SOI diodes, could effectively discharge the current when there is an ESD event. And the ESD protection circuits, which comprise more primary diodes, could effectively reduce the parasitic input capacitance, so that they can be used in the RF circuits or HF circuits. The proposed gated diode and non-gated diode can be fully process-compatiable to general partially-depleted or fully-depleted silicon-on-insulator CMOS processes.

The invention discloses a single-ended active probe circuit of a digital oscilloscope, which combines high-speed signal completeness test requirements and combines an existing component based on a broadband testing principle for analyzing a single-ended active probe. Through an impedance conversion module, the requirements of the single-ended active probe in high input impedance, smallest input capacitance and small output impedance are realized; simultaneously, through an output circuit, the single-ended active probe circuit can be matched with the input impedance of 50 ohm of the oscilloscope.

A power semiconductor device comprising a base, a trench, a heavily doped polysilicon structure, a polysilicon gate, a gate dielectric layer, and a heavily doped region is provided. The trench is formed in the base. The heavily doped polysilicon structure is formed in the lower portion of the trench. At least a side surface of the heavily doped polysilicon structure touches the naked base. The polysilicon gate is located in the upper portion of the trench. The gate dielectric layer is interposed between the polysilicon gate and the heavily doped polysilicon structure. The dopants in the heavily doped polysilicon structure are diffused outward to form a heavily doped region.

To provide a measurement device which allows long-term accurate measurement of voltage without adversely affecting a device under test, by ensuring a predetermined level of resistance to ESD and reducing leakage current. A measurement device includes a probe needle for contacting a device under test, a first FET for detecting voltage of the device under test, and a protection circuit for protecting the first FET from static electricity. The protection circuit includes a second FET having an oxide semiconductor film as a channel formation region.

An imaging element includes an amplifying transistor. A signal charge from the photodiode is transferable to the gate of amplifying transistor, the photodiode being within a semiconductor substrate. The source and drain of the amplifying transistor are electrically isolated from a semiconductor substrate, wherein the source is within a well or the source and drain are within a silicon-on-insulator layer.

Disclosed is an offset cancellation amplifier which includes a first differential pair, second differential pair, a common load circuit for the two differential pairs, current sources, an amplifier stage, and first and second capacitors. The first capacitor is connected to the gate of one transistor of the first differential pair. During a first period of a data output period, an output voltage and the reference voltage are supplied to the gates of the first differential pair, the second capacitor is disconnected from the gate of the other transistor of the first differential pair. In this state, the output voltage is accumulated in the first and second capacitors. An input voltage is supplied in common to the gates of the second differential pair During the second period, the second capacitor is disconnected from the first capacitor and connected to the gate of the other transistor of the first differential pair. The output voltage is accumulated in the first capacitor, while the reference voltage is accumulated in the second capacitor. During the third period, the gates of the first differential pair cease to be supplied with the output voltage and with the reference voltage, respectively, and are supplied with the voltages accumulated in the first and second capacitors, respectively. The gates of the second differential pair are supplied with the output voltage and with the input voltage, respectively.

An input and output driver is disclosed which includes comprising a DQ switch capable of reducing a total input capacitance Cin by electrically isolating an output driver from a DQ pad using the DQ switch in a writing mode to reduce the capacitance due to the output driver.

A lateral transient voltage suppressor with ultra low capacitance is disclosed. The suppressor comprises a first type substrate and at least one diode cascade structure arranged in the first type substrate. The cascade structure further comprises at least one second type lightly doped well and at least one first type lightly doped well, wherein there are two heavily doped areas arranged in the second type lightly doped well and the first type lightly doped well. The cascade structure neighbors a second type well, wherein there are three heavily doped areas arranged in the second type well. The suppressor further comprises a plurality of deep isolation trenches arranged in the first type substrate and having a depth greater than depths of the second type lightly doped well, the second type well and the first type lightly doped well. Each doped well is isolated by trenches.

A display has a plurality of organic light emitting diode (OLED) pixels each with an associated pixel driver circuit, a plurality of select lines and a plurality of data lines. Each pixel driver circuit is coupled to a select line and to a data line. The pixel driver circuit includes a drive transistor configured to drive an OLED and a select transistor having a first terminal coupled to a select line and a second terminal coupled to a data line, wherein one of the terminals of said select transistor comprises a gate connection of said select transistor and wherein the other terminal comprises one of a drain and a source connection of said select transistor, and wherein said select transistor comprises source, drain and gate regions, wherein said gate region at least partially overlaps said source and drain regions, and wherein an area of said overlap of said gate region with one of said source region and said drain region is greater than an area of said overlap with the other region so that a capacitance between said gate connection and one of said drain and source connections is less than a capacitance between said gate connection and the other connection.