1055results about "Measurement leads/probes" patented technology

An apparatus and a method for the testing of circuit boards, together with a test probe for this apparatus and this method, in which the contact tips of a test finger of a finger tester are monitored during the testing process by an optical detection device and their movement, at least when approaching a part of the circuit board test points of a circuit board to be tested, is corrected on the basis of the result determined by the optical detection device in such a way that the contact tip makes reliable contact with the circuit board test point concerned. The correction data hereby obtained may be used in the calculation of calibration data.

Passive balanced probes are disclosed for use with a signal analysis device. The probes are very low cost relative to typical commercially available probes and provide an extremely flat response over a frequency range of approximately 0 to at least 1.5 gigahertz. The probes include a probe body constructed primarily from conventional components, a first surface mount resistor electrically connected between a probe tip and a center conductor, and two surface mount resistors electrically connected and parallel between the center conductor and a conductive shield. The probes further include a coaxial cable for connection to an instrument combiner or other instrument connection device.

Method for determining a more efficient quality assurance or reliability test screen without falsely rejecting, i.e., over stressing, short channel length devices during voltage stress test screening. Short channel lengths devices fabricated on a semiconductor wafer have a higher tendency to fail at voltage levels that would otherwise not harm long channel length devices. The failures, however, are not related to device defects. Protection to the more vulnerable devices is provided by determining the speed of the die prior to the voltage test screen, thus, segregating the devices based on operational speed performance. Next, a lower voltage is effetively applied during wafer probe test to the faster devices, which directly correspond to the population of short channel devices.

A zero-point detecting method of this invention is performed prior to testing the electrical characteristics of a wafer by bringing an object to be tested on a stage and probes of a probe card into contact with each other. The surface of a zero-point detection plate is made of a conductive material (e.g., copper). The zero-point detection plate is used to detect a zero point as a position where the surface of the object to be tested comes into contact with the probe pins.

The present invention is directed to a high density test probe which provides a means for testing a high density and high performance integrated circuits in wafer form or as discrete chips. The test probe is formed from a dense array of elongated electrical conductors which are embedded in an compliant or high modulus elastomeric material. A standard packaging substrate, such as a ceramic integrated circuit chip packaging substrate is used to provide a space transformer Wires are bonded to an array of contact pads on the surface of the space transformer. The space transformer formed from a multilayer integrated circuit chip packaging substrate. The wires are as dense as the contact location array. A mold is disposed surrounding the array of outwardly projecting wires. A liquid elastomer is disposed in the mold to fill the spaces between the wires. The elastomer is cured and the mold is removed, leaving an array of wires disposed in the elastomer and in electrical contact with the space transformer The space transformer can have an array of pins which are on the opposite surface of the space transformer opposite to that on which the elongated conductors are bonded. The pins are inserted into a socket on a second space transformer, such as a printed circuit board to form a probe assembly. Alternatively, an interposer electrical connector can be disposed between the first and second space transformer.

A broad-band technique for reducing the distributed inductance of a four-conductor Kelvin cable is disclosed. A special inductance-canceling cable section is connected in tandem with the cable section contacting the cell / battery. Connections between the two cable sections are transposed such that conductors in each conductor pair of the canceling section connect to current-carrying and voltage-sensing conductors from different conductor pairs in the contacting section. The canceling section thereby exhibits a distributed negative mutual inductance between its current-carrying and voltage-sensing conductors that can effectively cancel the distributed positive mutual inductance introduced by the contacting section.In one embodiment, conductor pairs comprise pairs of insulated wires which may be twisted together. In other disclosed embodiments, conductor pairs comprise shielded coaxial cables.

To reduce noise in measurements obtained by probing a device supported on surface of a thermal chuck in a probe station, a conductive member is arranged to intercept current coupling the thermal unit of the chuck to the surface supporting the device. The conductive member is capacitively coupled to the thermal unit but free of direct electrical connection thereto.

Methods and apparatuses for testing semiconductor devices are disclosed. Over travel stops limit over travel of a device to be tested with respect to probes of a probe card assembly. Feedback control techniques are employed to control relative movement of the device and the probe card assembly. A probe card assembly includes flexible base for absorbing excessive over travel of the device to be tested with respect to the probe card assembly.

An anisotropically conductive sheet of the invention formed by containing conductive particles exhibiting magnetism in a sheet base composed of an elastic polymeric substance in a state dispersed in a plane direction thereof and oriented so as to align in a thickness-wise direction thereof. A thickness of the sheet is 10 to 100 μm, a number average particle diameter of the conductive particles exhibiting magnetism is 5 to 50 μm, a ratio W1 / D of the thickness W1 to the number average particle diameter D of the conductive particles exhibiting magnetism is 1.1 to 10, a content of the conductive particles exhibiting magnetism is 10 to 40% in terms of a weight fraction.