Semiconductor device and a method of manufacturing the same

Abstract

A technology is provided to reduce ON-resistance, and the prevention of punch through is achieved with respect to a trench gate type power MISFET. Input capacitance and a feedback capacitance are reduced by forming a groove in which a gate electrode is formed so as to have a depth as shallow as about 1 μm or less, a p− type semiconductor region is formed to a depth so as not to cover the bottom of the groove, and a p-type semiconductor region higher in impurity concentration than the p− type semiconductor region is formed under a n+ type semiconductor region serving as a source region of the trench gate type power MISFET, causing the p-type semiconductor region to serve as a punch-through stopper layer of the trench gate type power MISFET.

Description

CROSS-REFERENCE TO RELATED APPLICATION [0001] This application is a Continuation application of U.S. application Ser. No. 10 / 886,041 filed on Jul. 8, 2004. Priority is claimed based on U.S. application Ser. No. 10 / 886,041 filed on Jul. 8, 2004, which claims priority to Japanese Patent Application No. 2003-286142 filed on Aug. 4, 2003, all of which is incorporated by reference.FIELD OF THE INVENTION [0002] The invention relates to a semiconductor device and for a method of manufacturing the same, and in particular, to a semiconductor device and method employing power MISFETs (Metal Insulator Semiconductor Field Effect Transistors). BACKGROUND OF THE INVENTION [0003] In the case of a trench (groove) gate type power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) formed in a structure incorporating, for example, a p-type epitaxial layer as an upper layer of an n+ type substrate, it is known to reduce the risk of punch-through breakdown of the trench gate by forming an n-type...

AI Technical Summary

Benefits of technology

[0012] The trench gate type power MISFET shown in FIG. 35 has a trench gate structure wherein grooves 103 are formed in a top surface of an n+ type single crystal silicon substrate 101, and in an n− type single crystal silicon layer 102 formed in the upper part thereof. A conductor is embedded in each of the grooves 103 through gate insulator 104, thereby forming a gate 105. In the case of the trench gate structure described, a current flow path in the n− type single crystal silicon layer 102 which is relatively low in impurity concentration can be rendered shorter than that in a planar gate structure, thereby reducing JFET (Junction FET) resistance acting as ON-resistance. Further, a source electrode 106 may be formed to fill each of grooves 108 in the top surface of the substrate and insulating film 107, which source electrode may be electrically connected to a p+ type semiconductor region 110 formed in a p− type semiconductor region 109 serving as a channel layer, wherein an n+ type semiconductor region 111 serves as a source region. The p+ type semiconductor region 110 can be formed by self-aligned implantation of dopant ions from the groove 108 into the substrate, so that mask alignment allowance for implantation of the dopant ions need not be taken into account. Accordingly, because MISFET cell pitches can be scaled down, higher integration of the power MISFETs can be attained, and ON-resistance can be reduced. Furthermore, with the adoption of the trench gate structure, a channel length runs along a depth of the substrate, so as to allow for scale-down of the power MISFET cell pitches as compared with the planar gate type power MISFET (in which a channel length runs along the top surface of the substrate).

[0013] However, because the groove 103 having the gate 105 formed therein is at a depth as deep as, for example, about 1 μm, the gate insulator may act as a capacitance insulator and the gate may act as a capacitance electrode. Input capacitance among the capacitance components is proportional to a length of the periphery of the groove 103 (a surface area of the groove 103 under the n+ type semiconductor region 111), and feedback capacitance is proportional to a distance D12 of a portion of the groove 103 extending from the p− type semiconductor region 109 toward the n− type single crystal silicon layer 102 (a surface area of the potion of the groove 103, in contact with the n− type single crystal silicon layer 102). Accordingly, narrowing a width of the groove 103 reduces the input capacitance, and reducing the distance D12 of the portion of the groove 103 extending from the p− type semiconductor region 109 toward the n− type single crystal silicon layer 102 (thus rendering the groove shallower) reduces feedback capacitance.

[0015] If the impurity concentration of the p− type semiconductor region 109 is raised to prevent depletion from occurring to the channel layer, the threshold voltage of the MISFET may increase, resulting in an increase in ON-resistance. Further, if the p− type semiconductor region 109 has the same depth as that of the groove 103 in order to reduce the distance of the groove 103, the bottom of the groove 103 may be covered by the p− type semiconductor region 109 due to manufacturing variation of the groove 103, and the threshold voltage of the MISFET thus increases, thereby resulting in an increase in the ON-resistance.

[0029] Thus, the present invention provides a semiconductor device and method that provides a power MISFET that simultaneously provides lower ON-resistance and lower capacitance.

Problems solved by technology

Accordingly, there is a trend for a DC-DC converter towards higher frequency, and as the DC-DC converter operates higher in frequency, an increase in switching loss and drive loss may occur in a power MISFET.

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