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751 results about "Transient voltage suppressor" patented technology

A transient voltage suppressor or TVS is a general classification of an array of devices that are designed to react to sudden or momentary overvoltage conditions. One such common device used for this purpose is known as the transient voltage suppression diode that is simply a Zener diode designed to protect electronics device against overvoltages. Another design alternative applies a family of products that are known as metal-oxide varistors (MOV) that protect electronic circuits and electrical equipment.

LED array primary display light sources employing dynamically switchable bypass circuitry

The invention comprises use of Dynamically Switchable Bypass (DSB) elements in association with one or more Light Emitting Diodes (LEDs) in arrays for illumination circuits to provide rugged, reliable lighting. The DSBs are selected from Transient Voltage Suppressors, including Silicon, Metal Oxide Varistors, and Multi Layer Varistors as well as Zener Diodes. The DSBs are not used as circuit protecting devices, but rather as alternative paths for electric current to bypass failed LEDs. Bi-directional TVSs are used as alternative electric paths for circuits using Alternating Current (AC) and parallel LED arrays that light on both phases of AC. Zener Diodes are used in parallel to, but in the opposite polarity orientation to, one or more LEDs in DC or rectified AC circuits. The inventive paired DSB/LED elements overcomes the black-out problems of prior series LED illumination systems, making possible the use of robust LEDs in illumination systems where reliability, long life, low power consumption, low heat output, resistance to shock, vibration, and humidity, and self-diagnosis are important. The DSB elements have breakdown voltages slightly higher than the LED(s) they support, so that when an LED fails, the conduction through the DSB begins. Because the conduction voltage of the DSB so nearly matches the conduction voltage of the LED(s), the remainder of the circuit continues to function as normal. The system is self-diagnostic in that any LED failure presents itself as a dark LED rather than as a whole string of dark LEDs. DSBs may be used with incandescent bulbs.
Owner:IDD AEROSPACE

Transient voltage suppression device

A bi-directional transient voltage suppression (“TVS”) device (101) includes a semiconductor die (201) that has a first avalanche diode (103) in series with a first rectifier diode (104) connected cathode to cathode, electrically coupled in an anti-parallel configuration with a second avalanche diode (105) in series with a second rectifier diode (106) also connected cathode to cathode. All the diodes of the TVS device are on a single semiconductor substrate (301). The die has a low resistivity buried diffused layer (303) having a first conductivity type disposed between a semiconductor substrate (301) having the opposite conductivity type and a high resistivity epitaxial layer (305) having the first conductivity type. The buried diffused layer shunts most of a transient current away from a portion of the epitaxial layer between the first avalanche diode and the first rectifier diode, thereby reducing the clamping voltage relative to the breakdown voltage. The TVS device is packaged as a flip chip (202) that has four solder bump pads (211-214). The abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims pursuant to 37 C.F.R. §1.72(b).
Owner:PROTEK DEVICES

Circuit configurations to reduce snapback of a transient voltage suppressor

This invention discloses an electronic device formed as an integrated circuit (IC) wherein the electronic device further includes a transient voltage suppressing (TVS) circuit. The TVS circuit includes a triggering Zener diode connected between an emitter and a collector of a bipolar-junction transistor (BJT) wherein the Zener diode having a reverse breakdown voltage BV less than or equal to a BVceo of the BJT where BVceo stands for a collector to emitter breakdown voltage with base left open. The TVS circuit further includes a rectifier connected in parallel to the BJT for triggering a rectified current through the rectifier for further limiting an increase of a reverse blocking voltage. In a preferred embodiment, the triggering Zener diode, the BJT and the rectifier are formed in a semiconductor substrate by implanting and configuring dopant regions of a first and a second conductivity types in a N-well and a P-well whereby the TVS can be formed in parallel as part of the manufacturing processes of the electronic device.
Owner:ALPHA & OMEGA SEMICON LTD

Transient voltage suppressor and manufacturing method thereof

Disclosed are a transient voltage suppressor and a manufacturing method thereof. The transient voltage suppressor comprises a semiconductor substrate. On the semiconductor substrate, a first buried layer of a first doping type is formed. A second buried layer of a second doping type is formed with the first region of the first buried layer. A first epitaxial region is formed on the second buried layer and a second epitaxial region is formed on the second region of the first buried layer. The first epitaxial region and the second epitaxial region are of the second doping type and the first doping type, respectively. A first doped region and a second doped region are respectively located in the first epitaxial region and the second epitaxial region. The first doped region and the second doped region are respectively of the first doping type and the second doping type. An electrically conductive channel is configured to extend from the surface of the second epitaxial region to the first buried layer. A first electrode, a second electrode and a third electrode are respectively in contact with the electrically conductive channel, the first doped region and the second doped region. By means of the transient voltage suppressor, a multi-channel one-way or two-way device can be formed on a single chip.
Owner:NANJING SILERGY SEMICON TECH CO LTD

Bidirectional dual-channel transient voltage suppressor (TVS)

The invention discloses a bidirectional dual-channel transient voltage suppressor (TVS), which comprises a P+ substrate layer, wherein a first N+ buried layer, a first P- epitaxial region, a second P- epitaxial region, a third P- epitaxial region and a second N+ buried layer are sequentially arranged on the P+ substrate layer from left to right; a first N injection region and a second N injection region are arranged on the first N+ buried layer and the second N+ buried layer respectively; a first N+ active injection region and a second N+ active injection region are arranged on the first P- epitaxial region and the third P- epitaxial region respectively; and a first P+ active injection region, a second P+ active injection region and a third P+ active injection region are arranged on the first N injection region, the second P- epitaxial region and the second N injection region respectively. Due to the adoption of a combined structure of a Zener voltage-regulator tube and a low-capacitance diode, the parasitic capacitance of the TVS is further reduced, on resistance is reduced, and the clamp characteristic of the TVS is improved; and the TVS can be widely applied to static electricity protection of certain portable equipment and high-speed interfaces.
Owner:ZHEJIANG UNIV

Applying trenched transient voltage suppressor (TVS) technology for distributed low pass filters

ActiveUS20090261897A1Improved filtering configurationImprove filtering effectTransistorMultiple-port networksLow-pass filterInductor
An electronic circuit includes a filtering circuit implemented with a distributed inductor-and-capacitor (LC) network that includes metal oxide effect (MOS) trenches opened in a semiconductor substrate filled with dielectric material for functioning as capacitors for the distributed LC network. The electronic circuit further includes a transient voltage suppressing (TVS) circuit integrated with the filtering circuit that functions as a low pass filter wherein the TVS circuit includes a bipolar transistor triggered by a diode disposed in the semiconductor substrate. The distributed LC network further includes metal coils to function as inductors disposed on a top surface of the semiconductor electrically contacting the MOS trenches.
Owner:ALPHA & OMEGA SEMICON LTD

Bottom source NMOS triggered zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS)

A low voltage transient voltage suppressing (TVS) device supported on a semiconductor substrate supporting an epitaxial layer thereon. The TVS device further includes a bottom-source metal oxide semiconductor field effect transistor (BS-MOSFET) comprises a trench gate surrounded by a drain region encompassed in a body region disposed near a top surface of the semiconductor substrate wherein the drain region interfaces with the body region constituting a junction diode and the drain region encompassed in the body region on top of the epitaxial layer constituting a bipolar transistor with a top electrode disposed on the top surface of the semiconductor functioning as a drain/collector terminal and a bottom electrode disposed on a bottom surface of the semiconductor substrate functioning as a source/emitter electrode. The body regions further comprises a surface body contact region electrically connected to a body-to-source short-connection thus connecting the body region to the bottom electrode functioning as the source/emitter terminal. The gate may be shorted to the drain for configuring the BS-MOSFET transistor into a two terminal device with a gate-to-source voltage equal to a drain-to-source voltage. The drain/collector/cathode terminal disposed on top of the trench gate turns on the BS-MOSFET upon application of a threshold voltage of the BS-MOSFET thus triggering the bipolar transistor for clamping and suppressing a transient voltage substantially near a threshold voltage of the BS-MOSFET.
Owner:ALPHA & OMEGA SEMICON INC

A Transient Voltage Suppressor Based on Zener Diode

The invention discloses a transient voltage suppressor based on a Zener diode, which comprises an N substrate layer, wherein a first P+ epitaxial region, a second P+ epitaxial region, an N+ buried layer, a four P+ epitaxial region and a fifth P+ epitaxial region are sequentially arranged on the N substrate layer from left to right; a first P- well and a third P- well are respectively arranged on the second P+ epitaxial region and the fourth P+ epitaxial region; a third P+ epitaxial region, a second P- well and a third N+ active injection region are sequentially arranged on the N+ buried layerfrom bottom to top; a first P+ active injection region and a fourth P+ active injection region are respectively arranged on the first P+ epitaxial region and the five P+ epitaxial region; and an N+ active injection region and a P+ active injection area are respectively arranged on the first P-well and the third P-well in a corresponding manner. According to the transient voltage suppressor, the parasitic capacitance of the TVS (Transient Voltage Suppressor) is further reduced by adopting a composite structure of the Zener diode and a low capacity diode; and therefore, the transient voltage suppressor can be widely applied to certain portable equipment and high-speed interfaces for static electricity protection.
Owner:ZHEJIANG UNIV
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