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75results about How to "Reduced lateral area" patented technology
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Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS)
ActiveUS20090045457A1Reduced lateral areaReduce areaSemiconductor/solid-state device detailsSolid-state devicesCapacitanceZener diode
A transient-voltage suppressing (TVS) device disposed on a semiconductor substrate including a low-side steering diode, a high-side steering diode integrated with a main Zener diode for suppressing a transient voltage. The low-side steering diode and the high-side steering diode integrated with the Zener diode are disposed in the semiconductor substrate and each constituting a vertical PN junction as vertical diodes in the semiconductor substrate whereby reducing a lateral area occupied by the TVS device. In an exemplary embodiment, the high-side steering diode and the Zener diode are vertically overlapped with each other for further reducing lateral areas occupied by the TVS device.
Owner:ALPHA & OMEGA SEMICON INC
Apparatus and methods related to ground paths implemented with surface mount devices
ActiveUS20140308907A1Reduced lateral areaEasy to processMagnetic/electric field screeningSemiconductor/solid-state device detailsElectricityChip size
Disclosed are apparatus and methods related to ground paths implemented with surface mount devices to facilitate shielding of radio-frequency (RF) modules. In some embodiments, a module can include a packaging substrate configured to receive a plurality of components. The module can further include an RF component mounted on the packaging substrate and configured to facilitate processing of an RF signal. The module can further include an RF shield disposed relative to the RF component, with the RF shield being configured to provide shielding for the RF component. The RF shield can include at least one shielding-component configured to provide one or more electrical paths between a conductive layer on an upper surface of the module and a ground plane of the packaging substrate. The shielding-component can include a surface-mount device such as an RF filter implemented as a chip size surface acoustic wave (SAW) device (CSSD).
Owner:SKYWORKS SOLUTIONS INC
Semiconductor device comprising self-aligned contact elements
ActiveUS20120211837A1Improve compatibilityPrevent short-circuitingTransistorSemiconductor/solid-state device manufacturingPower semiconductor deviceEngineering
When forming sophisticated semiconductor devices, a replacement gate approach may be applied in combination with a self-aligned contact regime by forming the self-aligned contacts prior to replacing the placeholder material of the gate electrode structures.
Owner:GLOBALFOUNDRIES US INC
Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS)
ActiveUS20140319598A1Reduced lateral areaReduce areaTransistorSolid-state devicesCapacitanceZener diode
A transient-voltage suppressing (TVS) device disposed on a semiconductor substrate including a low-side steering diode, a high-side steering diode integrated with a main Zener diode for suppressing a transient voltage. The low-side steering diode and the high-side steering diode integrated with the Zener diode are disposed in the semiconductor substrate and each constituting a vertical PN junction as vertical diodes in the semiconductor substrate whereby reducing a lateral area occupied by the TVS device. In an exemplary embodiment, the high-side steering diode and the Zener diode are vertically overlapped with each other for further reducing lateral areas occupied by the TVS device.
Owner:ALPHA & OMEGA SEMICON INC
Apparatus and methods related to conformal coating implemented with surface mount devices
ActiveUS20140307394A1Reduced lateral areaEasy to processWave amplification devicesMagnetic/electric field screeningSurface mountingChip size
Disclosed are apparatus and methods related to conformal coating of radio-frequency (RF) modules. In some embodiments, a module can include an overmold formed over an RF component mounted on a packaging substrate. The overmold can also cover a surface-mount device (SMD) such as an RF filter implemented as a chip size surface acoustic wave (SAW) device (CSSD). The module can further include a conductive layer formed over the overmold and configured to provide RF shielding functionality for the module. The conductive layer can be electrically connected to a ground plane of the packaging substrate through the SMD. An opening can be formed in the overmold over the SMD; and the conductive layer can conform to the opening to electrically connect the conductive layer with an upper surface of the SMD and thereby facilitate the grounding connection.
Owner:SKYWORKS SOLUTIONS INC
Multi-layered thermal sensor for integrated circuits and other layered structures
InactiveUS7510323B2Improve space utilizationReduced lateral areaThermometer detailsSemiconductor/solid-state device detailsElectrical resistance and conductancePhotonic integrated circuit
Owner:INT BUSINESS MASCH CORP
Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS)
ActiveUS20170213815A1Reduced lateral areaReduce areaThyristorSolid-state devicesCapacitanceZener diode
A transient-voltage suppressing (TVS) device disposed on a semiconductor substrate including a low-side steering diode, a high-side steering diode integrated with a main Zener diode for suppressing a transient voltage. The low-side steering diode and the high-side steering diode integrated with the Zener diode are disposed in the semiconductor substrate and each constituting a vertical PN junction as vertical diodes in the semiconductor substrate whereby reducing a lateral area occupied by the TVS device. In an exemplary embodiment, the high-side steering diode and the Zener diode are vertically overlapped with each other for further reducing lateral areas occupied by the TVS device.
Owner:ALPHA & OMEGA SEMICON INC
Array with light emitting diodes and varying lens
ActiveUS20190383465A1Reduced lateral areaReduce horizontal sizePlanar light sourcesSolid-state devicesFlash lightLight-emitting diode
The invention describes a light emitting diode array module comprising at least two light emitting diodes and a lens, wherein the lens comprises one common lens segment, wherein the common lens segment comprises a multitude of sections at least partly encompassing an axis perpendicular to the lens, wherein the sections shape an uneven surface of the lens, wherein the light emitting diodes are arranged to illuminate at least two non-overlapping target areas in a reference plane, and wherein the sections are arranged such that at least one light emitting diode illuminates one respective target area of the target areas. The invention further describes a flash light comprising at least one light emitting diode array module.
Owner:LUMILEDS
Forming method of packaging structure
ActiveCN103730380AHighly integratedPlay the role of positioningSolid-state devicesSemiconductor/solid-state device manufacturingSemiconductor chipLead frame
A forming method of a packaging structure comprises the steps that a lead frame metal layer is provided; the lead frame metal layer is etched, a plurality of independent pins are formed, and openings are formed between adjacent pins; firs metal protruding blocks are formed on the surfaces of the pins; welding-flux layers are formed on the surfaces of the top and the side wall of each first metal protruding block; a semiconductor chip is provided, a welding disc is formed on the surface of the semiconductor chip, and second metal protruding blocks are formed on the welding disc; the semiconductor chip is inversely arranged on the pins, and the second metal protruding blocks on the semiconductor chip and the welding-flux layers on the surfaces of the first metal protruding blocks are welded together. According to the method, the occupied area of the packaging structure is reduced, and the integration level of the packaging structure is improved.
Owner:NANTONG FUJITSU MICROELECTRONICS
Forming method of packaging structure
ActiveCN103730378AHighly integratedImprove liquiditySolid-state devicesSemiconductor/solid-state device manufacturingPlastic packagingSemiconductor chip
Provided is a forming method of a packaging structure. The forming method comprises the steps that a pre-packaging face plate is provided, wherein the pre-packaging face plate comprises a first plastic-packaging layer, a plurality of integration units arrayed in a matrix mode are arranged in the first plastic-packaging layer, at least one semiconductor chip is arranged in each integration unit, a plurality of welding discs are arranged on the surfaces of the semiconductor chips, and the welding discs are provided with metal protruding blocks; a lead frame is provided, wherein the lead frame comprises a first surface and a second surface opposite to the first surface, the lead frame is provided with a plurality of bearing units arrayed in a matrix mode and middle ribs used for fixing the bearing units, each bearing unit is provided with a plurality of pins, openings are formed between adjacent pins, the pre-packaging face plate is inversely arranged on the first surface of the lead frame, so that the integration units correspond to the bearing units, and the metal protruding blocks and the first surfaces of the pins are welded. The occupied area of the packaging structure is small, and the integration level of the packaging structure is improved.
Owner:NANTONG FUJITSU MICROELECTRONICS
Multi-layered thermal sensor for integrated circuits and other layered structures
InactiveUS20070215973A1Improve space utilizationReduced lateral areaThermometer detailsSemiconductor/solid-state device detailsElectrical resistance and conductanceIntegrated circuit
A compact resistive thermal sensor is provided for an integrated circuit (IC), wherein different sensor components are placed on different layers of the IC. This allows the lateral area needed for the sensor resistance wire on any particular IC layer to be selectively reduced. In a useful embodiment, a plurality of first linear conductive members are positioned in a first IC layer, in spaced-apart parallel relationship with one another. A plurality of second linear conductive members are similarly positioned in a second IC layer in spaced-apart parallel relationship with one another, and in orthogonal relationship with the first linear members or in parallel with existing wiring channels of the second IC layer. Conductive elements respectively connect the first linear members into a first conductive path, and the second linear members into a second conductive path. A third conductive element extending between the first and second layers connects the first and second conductive paths into a single continuous conductive path, wherein the path has a resistance that varies with temperature. A device responsive to an electric current sent through the continuous path determines temperature of the path from the path resistance. Two or more of the thermal sensors could be connected in series, for use in measuring critical IC circuits.
Owner:IBM CORP
Apparatus and methods related to conformal coating implemented with surface mount devices
ActiveUS9419667B2Reduced lateral areaEasy to processMagnetic/electric field screeningSemiconductor/solid-state device detailsSurface mountingChip size
Disclosed are apparatus and methods related to conformal coating of radio-frequency (RF) modules. In some embodiments, a module can include an overmold formed over an RF component mounted on a packaging substrate. The overmold can also cover a surface-mount device (SMD) such as an RF filter implemented as a chip size surface acoustic wave (SAW) device (CSSD). The module can further include a conductive layer formed over the overmold and configured to provide RF shielding functionality for the module. The conductive layer can be electrically connected to a ground plane of the packaging substrate through the SMD. An opening can be formed in the overmold over the SMD; and the conductive layer can conform to the opening to electrically connect the conductive layer with an upper surface of the SMD and thereby facilitate the grounding connection.
Owner:SKYWORKS SOLUTIONS INC
Method for fabricating capacitor
InactiveUS20050266633A1Small widthLarge capacitanceSolid-state devicesSemiconductor/solid-state device manufacturingOptoelectronicsDielectric layer
A method for fabricating a capacitor is described. A metal layer is formed on a substrate, and then an insulating layer is formed over the substrate covering the metal layer. At least one opening is formed in the insulating layer exposing a portion of the metal layer, and a metal spacer is formed on the sidewall of the opening, wherein the metal spacer and the metal layer together constitute a lower electrode. A dielectric layer is formed on the lower electrode, and then an upper electrode is formed on the dielectric layer.
Owner:UNITED MICROELECTRONICS CORP
Semiconductor packaging structure
InactiveCN104064545AReduced lateral areaReduce volumeSemiconductor/solid-state device detailsSolid-state devicesLead frameSemiconductor package
The invention provides a semiconductor packaging structure. The semiconductor packaging structure comprises a chip. The surface of the chip is provided with a pad and a passivation layer. The passivation layer is provided with a first opening which exposes the pad. The pad is provided with a seed layer and columnar bumps. The seed layer is connected with the pad. The columnar bumps are stacked on the seed layer. The semiconductor packaging structure also comprises a lead frame which is provided with a plurality of discrete pins, and an inner pin and an outer pin are arranged at two opposite faces of each pin. The chip is installed on the lead frame in an inverted way. The columnar bumps are connected with the inner pin. The semiconductor packaging structure also comprises a plastic package layer, the chip, the columnar bumps and the lead frame are sealed by the plastic package layer and the outer pin is exposed. According to the semiconductor packaging structure, the occupied lateral area of the packaging structure is reduced, the volume of the whole packaging structure is reduced, and the integration of the packaging structure is raised.
Owner:NANTONG FUJITSU MICROELECTRONICS
Radio frequency module
ActiveCN104091789ASmall sizeReduced occupied volumeAntenna supports/mountingsSemiconductor/solid-state device detailsPlastic packagingEngineering
The invention discloses a radio frequency module. The radio frequency module comprises a carrier plate, radio frequency integrated chips, a first plastic packaging layer and a radio frequency identification antenna. The carrier plate comprises a plurality of chip areas and cutting channel areas, the radio frequency integrated chips are attached to the chip areas of the carrier plate, each radio frequency integrated chip comprises a first bonding pad and a second bonding pad, the surfaces of the radio frequency integrated chips and the surface of the carrier plate are covered with the first plastic packaging layer, the first plastic packaging layer is provided with a first metal column electrically connected with the first bonding pads and a second metal column electrically connected with the second bonding pads, the first metal column and the second metal column are exposed out of the first plastic packaging layer, the radio frequency identification antenna is located on the first plastic packaging layer and comprises a first end and a second end, the radio frequency identification antenna extends from the first end to the second end, the first end is electrically connected with the first metal column, and the second end is electrically connected with the second metal column. The radio frequency model is small in occupation area and volume.
Owner:NANTONG FUJITSU MICROELECTRONICS
Dynamic random access memory and fabrication thereof
InactiveUS7119390B2Increase the areaIncrease capacitanceTransistorSolid-state devicesStatic random-access memoryRandom access memory
A dynamic random access memory (DRAM) cell is described, including a semiconductor pillar on a substrate, a capacitor on a lower portion of a sidewall of the pillar, and a vertical transistor on an upper portion of the sidewall of the pillar. The capacitor includes a first plate in the lower portion of the sidewall of the pillar, a second plate as an upper electrode at the periphery of the first plate, a third plate at the periphery of the second plate electrically connected with the first plate to form a lower electrode, and a dielectric layer separating the second plate from the first and third plates. A DRAM array based on the DRAM cell and a method for fabricating the DRAM array are also described.
Owner:PROMOS TECH INC
Substrate integrated waveguide adjustable filter
ActiveCN107799856AReduced lateral areaHighly integratedWaveguide type devicesResonant cavityWaveguide
The invention relates to a substrate integrated waveguide adjustable filter. The substrate integrated waveguide adjustable filter comprises a resonant cavity and a plurality of first adjustable devices, wherein the resonant cavity comprises a first metal layer, a dielectric layer and a second metal layer, the dielectric layer is clamped between the first metal layer and the second metal layer, a metal through hole is formed in the interior of the resonant cavity, the metal through hole passes through the edge of the first metal layer, the edge of the dielectric layer and the edge of the secondmetal layer, and a rectangular cavity is surrounded; a gap is formed in the first metal layer along the inner side edge of the rectangular cavity; the first adjustable devices are distributed at different positions inside the rectangular cavity, and are used for controlling the resonant frequency of the resonant cavity. According to the substrate integrated waveguide adjustable filter, the gap isformed in the first metal layer, so that the upper metal layer and the lower metal layer of the resonant cavity are coupled, and the resonant frequency of the resonant cavity is greatly reduced; andwhen the substrate integrated waveguide adjustable filter with same center frequency is designed, the transverse area of the substrate integrated waveguide adjustable filter disclosed by the inventionis smaller, and the integration level is improved.
Owner:GUANGDONG MIKWAVE COMM TECH
Cable tunnel troubleshooting device and cable tunnel troubleshooting method
ActiveCN113466610AMessy arrangementIncrease the lateral areaTesting dielectric strengthRadiation pyrometryCommunications systemControl system
Owner:LVLIANG POWER SUPPLY COMPANY STATE GRID SHANXI ELECTRIC POWER
Dynamic random access memory and fabrication thereof
InactiveUS20050048711A1Increase capacitor surface areaEliminate the problemTransistorSolid-state devicesStatic random-access memoryRandom access memory
A dynamic random access memory (DRAM) cell is described, including a semiconductor pillar on a substrate, a capacitor on a lower portion of a sidewall of the pillar, and a vertical transistor on an upper portion of the sidewall of the pillar. The capacitor includes a first plate in the lower portion of the sidewall of the pillar, a second plate as an upper electrode at the periphery of the first plate, a third plate at the periphery of the second plate electrically connected with the first plate to form a lower electrode, and a dielectric layer separating the second plate from the first and third plates. A DRAM array based on the DRAM cell and a method for fabricating the DRAM array are also described.
Owner:PROMOS TECH INC
Apparatus and methods related to conformal coating implemented with surface mount devices
ActiveUS20170042069A1Reduced lateral areaEasy to processMagnetic/electric field screeningSemiconductor/solid-state device detailsSurface mountingComputer module
Apparatus and methods related to conformal coating implemented with surface mount devices. In some embodiments, a radio-frequency (RF) module includes a packaging substrate configured to receive a plurality of components. The RF also includes a surface mound device (SMD) mounted on the packaging substrate, the SMD including a metal layer that faces upward when mounted. The RF module further includes an overmold formed over the packaging substrate, the overmold dimensioned to cover the SMD. The RF module further includes an opening defined by the overmold at a region over the SMD, the opening having a depth sufficient to expose at least a portion of the metal layer. The RF module further includes a conformal conductive layer formed over the overmold, the conformal conductive layer configured to fill at least a portion of the opening to provide an electrical path between the conformal conductive layer and the metal layer of the SMD.
Owner:SKYWORKS SOLUTIONS INC
Dynamic random access memory unit and its array, and Method of making the same
ActiveCN1767199AIncrease surface areaReduced lateral areaTransistorSemiconductor/solid-state device manufacturingStatic random-access memoryEngineering
The invention relates to a dynamic random access memory unit and its array and the method for making the array. The dynamic random access memory unit comprises a semi-conducting column on the base, a capacitor on the side lower part of the semi-conducting column and a vertical crystal pipe on the side upper part of the semi-conducting column. The capacitor comprises: a first plate on the side lower part of the semi-conducting column, a second plate around the first pate as upper electrode, a third plate around the second pate and a dielectric layer which divides the second plate and the first and third plates. The third plate is connected with the first plate to form lower electrode. The invention also provides the method for making the dynamic random access memory unit and its array.
Owner:PROMOS TECH INC
Novel multifunctional shopping cart
InactiveCN105035135AReduced lateral areaEasy to placeHand carts with multiple axesShopping basketEngineering
The invention discloses a novel multifunctional shopping cart. The novel multifunctional shopping cart comprises a heat preservation box, an upper shopping basket, a lower shopping basket and a frame for containing the upper shopping basket, the lower shopping basket and the heat preservation box. The frame comprises a base, a supporting frame installed at the upper end of the base and used for supporting the upper shopping basket and the heat preservation box and a push handle frame at the top end of the supporting frame. A supporting rod connected with the lower end of the push handle frame through fixing frames is arranged at the lower end of the push handle frame. Wheels are installed on the periphery of the lower end of the base. The upper shopping basket comprises a basket bottom face and basket side walls connected with the basket bottom face through movable parts. Notches are formed in the two sides of each basket side wall, locking parts are arranged in the notches, and the adjacent basket side walls are connected through the locking parts. According to the novel multifunctional shopping cart, space is saved, objects are placed in different zones, the heat preservation box for containing quick-frozen food is arranged, the cart can serve as a chair for people to have a rest or contain large commodities, diverse functions are achieved, and the design is reasonable.
Owner:范昕昀
Multifunctional double-layer shopping cart
InactiveCN105035139AReduced lateral areaFlexible useHand carts with multiple axesShopping basketVehicle frame
The invention discloses a multifunctional double-layer shopping cart which comprises an upper shopping basket, a lower shopping basket and a cart frame used for containing the upper shopping basket and the lower shopping basket. The cart frame comprises a base, a supporting frame installed at the upper end of the base and supporting the upper shopping basket, and a pushing hand frame at the top end of the supporting frame. Wheels are installed on the periphery of the lower end of the base. The upper shopping basket comprises a basket bottom face and basket side walls movably connected with the basket bottom face through rotating parts. Concave openings are formed in the two sides of the basket side walls, locking parts are arranged in the concave openings, and the adjacent basket side walls are connected through the locking parts. According to the multifunctional double-layer shopping cart, space is saved, goods are placed in a partitioning mode, the multifunctional double-layer shopping cart can be used as a chair for people to have a rest or can be used for containing large-size goods, functions are multiple, and design is reasonable.
Owner:范昕昀
Dynamic random access memory cell and fabrication thereof
InactiveUS7026209B2Increase capacitor surface areaEliminate the problemTransistorSolid-state devicesStatic random-access memoryEngineering
A dynamic random access memory (DRAM) cell is described, including a semiconductor pillar on a substrate, a capacitor on a lower portion of a sidewall of the pillar, and a vertical transistor on an upper portion of the sidewall of the pillar. The vertical transistor includes a first doped region, a second doped region, a gate and a gate insulating layer. The first doped region is located in the sidewall and is coupled with the capacitor. The second doped region is located in a top portion of the pillar. The gate is disposed on the sidewall of the pillar between the first and the second doped regions, and the gate insulating layer is disposed between the sidewall and the gate.
Owner:PROMOS TECH INC
Radio frequency module forming method
ActiveCN104064524ASmall sizeAchieve mass productionSemiconductor/solid-state device detailsSemiconductor/solid-state device manufacturingEngineeringRadio frequency
A radio frequency module forming method comprises the following steps: a carrier plate including a plurality of chip areas and cutting channel areas is provided; radio frequency integrated chips are provided, and the radio frequency integrated chips are pasted on the chip areas of the carrier plate, wherein each radio frequency integrated chip includes a first pad and a second pad; a first plastic package layer covering the surfaces of the radio frequency integrated chips and the carrier plate is formed, wherein the first plastic package layer is internally provided with a first metal column electrically connected with the first pad and a second metal column electrically connected with the second pad, and the first plastic package layer exposes the first metal column and the second metal column; a radio frequency identification antenna is formed on the first plastic package layer, wherein the radio frequency identification antenna includes a first end and a second end and extends from the first end to the second end, the first end is electrically connected with the first metal column, and the second end is electrically connected with the second metal column; and the first plastic package layer and the carrier plate are cut along the cutting channel areas to form a plurality of separate radio frequency modules. By adopting the method of the invention, the area occupied by the radio frequency modules can be reduced, and the radio frequency module making efficiency can be improved.
Owner:NANTONG FUJITSU MICROELECTRONICS
Trench type insulated gate bipolar transistor and its manufacturing method
ActiveCN103094324BLower on-resistanceReduce chip areaSemiconductor/solid-state device manufacturingSemiconductor devicesElectrical resistance and conductanceGate dielectric
A trench-type insulated gate bipolar transistor and a method for fabricating the same are provided. The trench-type insulated gate bipolar transistor comprises a collector layer (220), a drift layer (240), a base layer (250), an emitter layer (260), a groove (290), and a gate dielectric layer (291) and a gate electrode (292) formed in the groove (290). An upper surface of the gate electrode (292) in the groove (290) is etched back below an upper surface of the base layer (250), so that the emitter layer (260) is formed operable by inclined ion implantation. The method comprise a back etching step of the gate electrode (292) and a step to form the emitter layer (260) by use of the gate electrode (292) as a mask and inclined ion implantation. The trench-type insulated gate bipolar transistor fabricated by the method has a small on-resistance and can reduce the chip area.
Owner:CSMC TECH FAB2 CO LTD
Photovoltaic inverter
InactiveCN103259421AImprove stabilityReduced lateral areaAc-dc conversionPhotovoltaic energy generationEngineeringElectrical and Electronics engineering
The invention discloses a photovoltaic inverter which comprises a cabinet body, a boosting module and an inversion module, wherein the boosting module and the inversion module are arranged in the cabinet body, and cooling fins are arranged on the boosting module and the inversion module. The photovoltaic inverter further comprises a fan which is arranged in the cabinet body. An air inlet and an air outlet are formed in the cabinet, and the fan enables gas to enter the cabinet body and to pass by the air inlet, the cooling fins and the air outlet in sequence. When the photovoltaic inverter works, modules with a larger heating amount are the boosting module and the inversion module, the heat generated by the boosting module and the inversion module can be transmitted to the cooling fins, the fan enables the gas to enter the cabinet body through the air inlet, to pass by the cooling fins and to flow out of the cabinet body through the air outlet. Each cooling fin can dissipate heat by itself, when the gas passes by the cooling fins, heat exchanging occurs between the cooling fins and the flowing gas, and the heat can be transmitted out of the cabinet body along with the flowing gas. Therefore, heat dissipating capacity of the cooling fins is greatly improved, a heat-dissipating effect is provided, and the heat-dissipating requirement of large-power photovoltaic inverters can be met.
Owner:清源科技股份有限公司
Dynamic random access memory and fabrication thereof
ActiveCN1599070AReduced lateral areaHighly integratedTransistorSemiconductor/solid-state device manufacturingEngineeringSemiconductor
A dynamic random access memory (DRAM) cell is described, including a semiconductor pillar on a substrate, a capacitor on a lower portion of a sidewall of the pillar, and a vertical transistor on an upper portion of the sidewall of the pillar. The vertical transistor includes a first doped region, a second doped region, a gate and a gate insulating layer. The first doped region is located in the sidewall and is coupled with the capacitor. The second doped region is located in a top portion of the pillar. The gate is disposed on the sidewall of the pillar between the first and the second doped regions, and the gate insulating layer is disposed between the sidewall and the gate.
Owner:PROMOS TECH INC
Unmanned aerial vehicle
ActiveCN109334946AAvoid damageReduced lateral areaFuselagesAir-flow influencersMarine engineeringUncrewed vehicle
The invention relates to an unmanned aerial vehicle. The unmanned aerial vehicle comprises a fuselage and a plurality of vehicle arms which are evenly distributed around the fuselage; wings are arranged at the ends, deviating from the fuselage, of the vehicle arms; one ends of the vehicle arms are hinged to the fuselage through hinging shafts, the hinging shafts are provided with torsional springs, and the torsional springs are used for driving the vehicle arms to be overturned towards the side of the fuselage and enabling the wings to get close to the outer side of the fuselage; the unmannedaerial vehicle further comprises telescopic power assemblies mounted on the wings, limiting holes are formed in the outer side wall of the fuselage, and telescopic heads of the telescopic power assemblies can be inserted into the limiting holes and enable the vehicle arms to be kept in an extending state; and the telescopic power assemblies can be controlled by a remote controller to generate thetelescopic action. The unmanned aerial vehicle has the effect of being capable of significantly reducing the damage degree to the wings during crash.
Owner:何雪琴
Miniature coaxial double rotor wings unmanned aerial vehicle
ActiveCN109878713ASuitable for decorationFlexible angle adjustmentPower plant constructionAircraft controlRotary wingRudder
The invention relates to a miniature coaxial double rotor wings unmanned aerial vehicle, which comprises a coaxial double rotor wings power system, a lightweight vehicle body and a steering tail rudder system, which are sequentially connected from top to bottom. The coaxial double rotor wings power system comprises an upper rotor wing, a lower rotor wing and a double rotor wings bracket, and the upper rotor wing, the lower rotor wing and the double rotor wings bracket are coaxially arranged; the upper rotor wing is arranged on the double rotor wing bracket; the lower rotor wing is arranged inthe double rotor wings bracket. The lightweight vehicle body is of a streamline hollow structure, and two ends of the lightweight vehicle body are provided with vehicle body curved surfaces which aresymmetrically designed. The steering tail rudder system comprises a steering engine, a steering mechanism and steering rudder wings, wherein the steering engine is arranged on the steering mechanism,and the steering rudder wings are symmetrically arranged on two sides of the steering mechanism. Through the design of the lightweight vehicle body and the coaxial double rotor wings power system, theminiature coaxial double rotor wings unmanned aerial vehicle is light and small, and has a larger weight proportion of the bearable load compared to the weight of the vehicle body, and the angle of the vehicle body can be flexibly adjusted, so that the unmanned aerial vehicle is able to pass through a narrow space and is suitable for the arrangement of the unmanned aerial vehicle fleet.
Owner:SHANGHAI JIAO TONG UNIV
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