360results about How to "Large capacitance" patented technology

The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

To solve the lack of program time, which is a problem of a display device including an EL element, and to provide a display device including a pixel circuit with a high aperture ratio and a driving method thereof. In a circuit including a driving transistor, a capacitor, a display element which can be used as a capacitor, a first power supply line and a second power supply line, potentials of the first power supply line and the second power supply line are set to be almost the same, thereby a threshold voltage of the driving transistor is held in the display element, and after that, a charge is divided into the display element and the capacitor.

Exemplary embodiments of the invention provide a micromechanical electrostatic resonator which designs high frequency, increases a ratio of output voltage to input voltage, and designs low drive voltage or reduced power consumption. A micromechanical electrostatic resonator of exemplary embodiments includes a plate-shaped vibration body, a pair of electrodes arranged oppositely to each other at both sides of the vibration body with a gap from an outer circumferential portion of the vibration body, a feeding device to apply in-phase alternating-current power to the pair of electrodes, and a detecting device to obtain an output corresponding to a change in capacitance between the vibration body and the electrodes. The planar shape of the vibration body takes a shape having a curved outline which comprises a neck portion.

In a method of manufacturing a dielectric structure, after a tunnel oxide layer pattern is formed on a substrate, a floating gate is formed on the tunnel oxide layer. After a first dielectric layer pattern including a metal silicon oxide and a second dielectric layer pattern including a metal silicon oxynitride are formed, a control gate is formed on the dielectric structure. Since the dielectric structure includes at least one metal silicon oxide layer and at least one metal silicon oxynitride layer, the dielectric structure may have a high dielectric constant and a good thermal resistance. A non-volatile semiconductor memory device including the dielectric structure may have good electrical characteristics such as a large capacitance and a low leakage current.

Embodiments of the present invention are directed to apparatuses and methods of making a micromachined resonator gyroscope, e.g. a disc resonator gyro (DRG), including one or more of the following novel features. Embodiments of the invention may comprise a triple-wafer stack gyroscope with an all fused quartz (or all silicon) construction for an electrical baseplate, resonator and vacuum cap. This can yield superior thermal stability over prior art designs. A typical resonator embodiment may include a centrally anchored disc with high aspect-ratio in-plane electrostatic drive and sense electrodes to create large capacitance. A silicon sacrificial layer may be employed for attaching a quartz resonator wafer to a quartz handle wafer for high aspect-ratio etching. In addition, embodiments of the invention may comprise a low thermal stress, wafer-level vacuum packaged gyroscope with on-chip getter. An ultra-thin conductive layer deposited on the quartz resonator may also be utilized for high Q.

Disclosed is a feedback-type amplifier circuit including feedback-type charging means, which operates as a voltage follower, having a differential stage which receives an input-terminal voltage and an output-terminal voltage differentially as inputs and charging means for performing a charging operation at the output terminal based upon an output from the differential stage; and follower-type discharging means for performing a discharging operation at the output terminal by follower operation of an active element in accordance with a voltage difference between the input-terminal voltage and the output-terminal voltage.

To provide a digital control switching power-supply device capable of suitably achieving fast transient response at the time of a sudden load change. In parallel with normal digital signal processing means that outputs a PWM pulse signal having a desired duty, transient variation detection means composed of a CR filter provided across an output inductor and a window comparator is provided in preparation for a sudden load change. If a sudden decrease in load is detected, a PWM pulse signal having a duty of 0% is forcedly output, and if a sudden increase in load is detected, a PWM pulse signal having a duty of 100% is forcedly output.

In a method of manufacturing a dielectric structure, after a tunnel oxide layer pattern is formed on a substrate, a floating gate is formed on the tunnel oxide layer. After a first dielectric layer pattern including a metal silicon oxide and a second dielectric layer pattern including a metal silicon oxynitride are formed, a control gate is formed on the dielectric structure. Since the dielectric structure includes at least one metal silicon oxide layer and at least one metal silicon oxynitride layer, the dielectric structure may have a high dielectric constant and a good thermal resistance. A non-volatile semiconductor memory device including the dielectric structure may have good electrical characteristics such as a large capacitance and a low leakage current.

A display unit has an organic light emitting diode (OLED) 21 provided in correspondence with each of pixels and capable of emitting light by itself, a drive transistor 22 for driving the OLED 21, a twig transistor 23 which is formed so as to have a portion of an electrode of the drive transistor 22 independently formed, and which is used to detect a threshold voltage (Vth) of the drive transistor 22, a compensating capacitor 28 in which the threshold voltage (Vth) detected by the twig transistor 23 is written, a signal capacitor 27 in which a signal voltage to be supplied to the drive transistor 22 is written, a first transistor 24 provided between a data line and the signal capacitor 27, a second transistor 25 provided between the signal capacitor 27 and the compensating capacitor 28, and a third transistor 26 provided between a gate electrode and another electrode of the twig transistor 23.

A semiconductor device includes an Si substrate having a first surface provided with semiconductor elements, such as a CMOS transistor and a diode, and a second surface opposite to the first surface. On one of the first and the second surfaces, a bypass capacitor is formed. The bypass capacitor includes a Vcc power supply layer and a GND layer which serve to supply a power supply voltage to the semiconductor element, and a high dielectric constant layer sandwiched between the Vcc power supply layer and the GND layer.

A solid electrolytic capacitor includes a cathode including a solid electrolytic layer, an anode, and a dielectric layer provided between the cathode and the anode. The anode includes an anode body, an input anode terminal and an output anode terminal. A bypass current path for causing circuit current to detour around the anode body is formed between the input anode terminal and the output anode terminal.

In a solid electrolytic capacitor, an anode terminal (27 in FIG. 3) has a T-shaped section in which two plate pieces intersect at right angles. One of the two plate pieces is exposed to the mounting surface of the solid electrolytic capacitor, while the other is perpendicularly erected to an anode lead (11). The two plate pieces are made of a series of continuous members.

The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

The present invention is to provide a metallized film capacitor having a compact size, a large capacitance and a low inductance whereas number of parts is reduced. The metallized film capacitor comprises: a plurality of capacitor elements (1) provided with metallized contact electrodes (2) on both ends in the width direction; a bus-bar (3) to connect each of a plurality of electrodes (2) on one end; and a capacitor case (5) to house a plurality of capacitor elements (1), wherein a plurality of capacitor elements (1) are arranged in the capacitor case such that one side of electrodes (2) faces the opening surface of capacitor case (1) and each electrode (2) of one of both ends of each capacitor element (1) are positioned generally coplanarly.