712results about How to "Reduce horizontal size" patented technology

A method of forming a vertical fin field effect transistor (vertical finFET) with two concentric gate structures, including forming one or more tubular vertical fins on a substrate, forming a first gate structure around an outer wall of at least one of the one or more tubular vertical fins, and forming a second gate structure within an inner wall of at least one of the one or more tubular vertical fins having the first gate structure around the outer wall.

A multi-element antenna with sufficiently small return loss and mutual coupling signals to allow the simultaneous transmission of powerful radar signals and the reception of faint target return signals. The microstrip patch antenna has radio frequency absorbing material place between neighboring antenna elements to reduce the mutual coupling leakage signals.

Threaded and coupled pipe connections are provided with a number of design features that increase resistance of the connection to fatigue failure from cyclical side loading. The features acting alone or in combination include the provision of a pin thread that is formed along a single taper and that vanishes at the surface of the pipe. The coupling engages the pin such that the threaded area of the coupling engages all of the pin threads and extends beyond the vanish point of the pin threads at the optimum coupling makeup position. The threads of the coupling and pipe may engage along both the stab and load flanks to distribute the side loading. The external surface of the coupling may be tapered from the center toward each coupling end to reduce the stiffness ratio of the connection, and the ends or faces of the coupling may be reduced in radial thickness to prevent coupling splitting. The coupling length may be extended to exceed standard coupling lengths to provide the additional threaded area and / or taper areas and / or reduced stiffness ratios.

An image sensor module structure includes an image sensor package, a housing, and an underfiller. The image sensor package includes a substrate having interconnection pads formed on an outermost edge. The housing includes a filter projecting from a bottom surface of a housing body. The projecting filter is attached on an image sensor chip using various adhesive patterns. Further, the underfiller is formed in a space between the housing body and the image sensor package.

A method of treatment of congestive heart failure comprises the steps of introducing an aortic occlusion catheter through a patient's peripheral artery, the aortic occlusion catheter having an occluding member movable from a collapsed position to an expanded position; positioning the occluding member in the patient's ascending aorta; moving the occluding member from the collapsed shape to the expanded shape after the positioning step; introducing cardioplegic fluid into the patient's coronary blood vessels to arrest the patient's heart; maintaining circulation of oxygenated blood through the patient's arterial system; and reshaping an outer wall of the patient's heart while the heart is arrested so as to reduce the transverse dimension of the left ventricle. The ascending aorta may be occluded and cardioplegic fluid delivered by means of an occlusion balloon attached to the distal end of an elongated catheter positioned transluminally in the aorta from a femoral, subclavian, or other appropriate peripheral artery.

A new and versatile ultra-miniature pressure sensor comprises a very thin diaphragm of approximately one micron or less, e.g., 0.2 microns. In some embodiments, the diaphragm has a radius of 20 microns and the pressure sensor can detect signals at or near 0.1 Atm with 1% accuracy. The diaphragm is formed by epitaxial growth of silicon or by bonding and etching. A plurality of high sensitivity piezoresistive strain gauges measure strain of the diaphragm. Less than 0.1 microns thick, the piezoresistive strain gauges are embedded in the diaphragm by ion implantation or formed thereon by epitaxial growth. The ability to form ultra-thin piezoresistive layers on very thin diaphragms enables the miniaturization of the pressure sensor as well as any device that employs it.

A microstructured infrared sensor includes: a sensor chip having a diaphragm; a cavity formed underneath the diaphragm; a thermopile structure formed on the diaphragm and having bonded printed conductors; an absorber layer formed on the thermopile structure for absorbing infrared radiation; and a cap chip attached to the sensor chip. A sensor space is formed between the cap chip and the sensor chip, and the sensor space accommodates the thermopile structure. The infrared sensor also includes a convex lens area for focusing incident infrared radiation onto the absorber layer. The lens area may be formed on the top of the cap chip or on a lens chip attached to the cap chip. The lens area may be formed by drying a dispensed lacquer droplet, or by a softened, structured lacquer cylinder, or by subsequent etching of the dried lacquer droplet and the surrounding substrate material.

A dual polarized three-sector base station antenna with variable beam tilt in each sector. The invention advantageously provides a variable phase shifter with very small lateral dimensions which significantly reduces the diameter of a three-sector antenna. The feed network is located on both sides of the antenna ground plane, and the combination of the cable, microstrip and airstrip lines further reduces the lateral size of the antenna. Metal rings on the radome and double-bended ground plane are providing antenna with better cross-polarization and port-to-port isolation.

This invention discloses a junction barrier Schottky device supported on a substrate that has a first conductivity type. The Schottky device includes a first diffusion region of a fist conductivity type for functioning as a forward barrier height reduction region. The Schottky device further includes a second diffusion region of a second conductivity type disposed immediately adjacent to the first diffusion region for functioning as a backward blocking enhancement region to reduce the backward leakage current.

The present invention relates to surveillance and / or identification devices having capacitors connected in parallel or in series, and methods of making and using such devices. Devices with capacitors connected in parallel, where one capacitor is fabricated with a relatively thick capacitor dielectric and another is fabricated with a relatively thin capacitor dielectric achieve both a high-precision capacitance and a low breakdown voltage for relatively easy surveillance tag deactivation. Devices with capacitors connected in series result in increased lateral dimensions of a small capacitor. This makes the capacitor easier to fabricate using techniques that may have relatively limited resolution capabilities.

An arrangement for coupling between a free-space propagating optical signal and an ultrathin silicon waveguide formed in an upper silicon layer (SOI layer) of a silicon-an-insulator (SOI) structure includes a silicon nanotaper structure formed in the (SOI layer) and coupled to the ultrathin silicon waveguide. A dielectric waveguide coupling layer is disposed so as to overly a portion of a dielectric insulating layer in a region where an associated portion of the SOI layer has been removed. An end portion of the dielectric waveguide coupling layer is disposed to overlap an end section of the silicon nanotaper to form a mode conversion region between the free-space signal and the ultrathin silicon waveguide. A free-space optical coupling arrangement is disposed over the dielectric waveguide coupling layer and used to couple between free space and the dielectric waveguide coupling layer and thereafter into the ultrathin silicon waveguide.

The invention discloses a display substrate and a display device provided with the display substrate and belongs to the display technical field. The display substrate and the display device solve the technical problems that a display panel formed by an existing pixel unit neutron pixel arraying mode is low in pixel density and incapable of meeting requirements of products for high distinguishability. The display substrate comprises a plurality of pixel units distributed in an array mode. Each pixel unit comprises a first sub-pixel, a second sub-pixel and a third sub-pixel. The first sub-pixel, the second sub-pixel and the third sub-pixel are adjacent to each other and are all oblong. Each first sub-pixel is arranged in the transverse direction, and each second sub-pixel and each third sub-pixel are arranged in the longitudinal direction. The long edge of each second sub-pixel is adjacent to the long edge of each third sub-pixel. The long edge of each first sub-pixel is adjacent to the short edge of each second sub-pixel and the short edge of each third sub-pixel. The display substrate is used for display devices such as a liquid crystal display and an OLED.

An arrangement for providing optical coupling between a free-space propagating optical signal and an ultrathin silicon waveguide formed in an upper silicon layer of a silicon-on-insulator (SOI) structure includes a silicon nanotaper structure formed in the upper silicon layer (SOI layer) of the SOI structure and coupled to the ultrathin silicon waveguide. A dielectric waveguide coupling layer, with a refractive index greater than the index of the dielectric insulating layer but less than the refractive index of silicon, is disposed so as to overly a portion of the dielectric insulating layer in a region where an associated portion of the SOI layer has been removed. An end portion of the dielectric waveguide coupling layer is disposed to overlap an end section of the silicon nanotaper to form a mode conversion region between the free-space propagating optical signal and the ultrathin silicon waveguide. A free-space optical coupling arrangement (such as a prism or grating) is disposed over the dielectric waveguide coupling layer and used to couple a propagating optical signal between free space and the dielectric waveguide coupling layer and thereafter into the ultrathin silicon waveguide.

The present invention relates to a triangular bent-plate piezoelectric linear ultrasonic motor, including a stator and a rotor. The rotor is a linear guide rail, the upper part of which is supported by two guide wheels with the spring support parallel arranged, while the lower part is supported by the stator. The stator consists of a hollow triangular elastic frame and a piezoelectric actuator adhering on the outside surface of the frame. The triangular top point of the hollow triangular elastic frame has a projection abutting with the bottom surface of the linear guide rail, while the midpoint of the bottom edge of the triangle has a clamp fastener connected with the seat. The motor of the invention has a relatively small lateral dimension, can be used for the bidirectional driving and controlling, and has the advantages of simple structure, use convenience and low cost.

A mounting assembly for pivotally mounting a workpiece holder to a support structure includes a mounting member having an opening at least partially therethrough and a swivel member. The swivel member has a generally cylindrical passageway therethrough for at least partially receiving a support structure. The swivel member defines a truncated, generally spherical shaped swivel member having a curved outer surface for engaging an inner surface of the opening of the mounting member. The swivel member includes a reduced diameter or chamfered portion at the outer surface to facilitate insertion of the swivel member into the opening of the mounting member, whereby the swivel member is substantially retained within the opening after insertion therein. The mounting member may be a mounting bracket for adjustably mounting to a workpiece holder or may be a mounting block which is attachable to a workpiece holder.

A memory cell for use in a magnetic random access memory (MRAM) circuit includes at least first and second transistors formed in a semiconductor layer. A first insulating layer is formed on at least a portion of the first and second transistors. The memory cell further includes a first magnetic storage element formed on at least a portion of the first insulating layer, at least a second insulating layer formed on at least a portion of the first magnetic storage element, and at least a second magnetic storage element formed on at least a portion of the second insulating layer. The first and second magnetic storage elements are electrically connected to the first and second transistors, respectively.

A pull-on disposable wearing article is formed in a crotch region with a pair of first folding guide lines extending from a first waist lateral margin toward a transverse middle of the crotch region and a pair of second folding guide lines extending from a second waist lateral margin toward the transverse middle of the crotch region. The crotch region is divided into a first zone enclosed by the first waist lateral margin and the first folding guide lines, a second zone enclosed by the second waist lateral margin and the second folding guide lines and a third zone except these first and second zones. Inside the side edges of the core, first and second elastic members stretched at a predetermined ratio are contractibly attached to the article. These first and second elastic members extend in the leg-surrounding direction across these zones to the third zone. These zones are pulled inward as viewed in a leg-surrounding direction under a contractile force of the elastic members to form tucks which are convex inwardly of the leg-holes.

An absorbent article includes a belt member defining front and rear waist regions and a liquid-absorbent structure defining a crotch region wherein the belt member includes a peripheral edge of a waist-opening and this peripheral edge includes two segments associated with the front and rear waist regions spaced from and opposed to each other in an anteroposterior direction Y. Front and rear belt sections of the belt member include, in the front and rear waist regions, see-through regions for the article wearer's skin having a total light transmittance of about 55% or higher and occupying 40% or more of the front and rear waist regions. The front and rear belt sections are provided along the peripheral edge of the waist-opening with a reinforcing elastic member extending in a transverse direction X.

A new and versatile ultra-miniature pressure sensor comprises a very thin diaphragm of approximately one micron or less, e.g., 0.2 microns. In some embodiments, the diaphragm has a radius of 20 microns and the pressure sensor can detect signals at or near 0.1 Atm with 1% accuracy. The diaphragm is formed by epitaxial growth of silicon or by bonding and etching. A plurality of high sensitivity piezoresistive strain gauges measure strain of the diaphragm. Less than 0.1 microns thick, the piezoresistive strain gauges are embedded in the diaphragm by ion implantation or formed thereon by epitaxial growth. The ability to form ultra-thin piezoresistive layers on very thin diaphragms enables the miniaturization of the pressure sensor as well as any device that employs it.

The invention discloses a three-dimensional hollow light spot generating method and a three-dimensional hollow light spot generating device. The three-dimensional hollow light spot generating device comprises a laser, a single mode fiber, a collimating lens, a first polarizing beam splitter prism, a plurality of light turning assemblies, two phase modulators, a second polarizing beam splitter prism, a 1 / 4 wave plate, a microobjective, a sample surface and a medium film reflecting lens. The three-dimensional hollow light spot generating method comprises the following steps; performing different phase modulation on vertical polarized light and parallel polarized light; combining the two modulated light beams, and converting the combined light beam into two circuit polarized lights by the same 1 / 4 wave plate; projecting the two circuit polarized lights by the microobjective to penetrate through the sample surface, and reflecting the two circuit polarized lights by the medium film reflecting lens; interfering the reflected light irradiated to the sample surface with projecting light to form a transverse hollow light spot and an axial hollow light spot respectively; and superposing the light intensities of the two hollow light spots to form a three-dimensional hollow light spot, wherein the transverse size of the three-dimensional hollow light spot is 0.56 wavelengths and the axial size of the three-dimensional hollow light spot is 0.44 wavelengths. The three-dimensional hollow light spot generating method and the three-dimensional hollow light spot generating device can be applied to super-resolution microscopic equipment such as a stimulated emission depletion microscope and are used for realizing three-dimensional super-resolution microscopy.

A delivery system (114) for a self-expanding device (110) for placement in a bodily lumen, the system comprising a sheath (112) that confines the device to a radially compact delivery disposition until the device is to be released into the lumen, the system having an elongate pull element (118) to be pulled proximally from its proximal end, which pull element is arranged radially inside the sheath for pulling preferentially on a pull zone on the circumference of the distal end of the sheath, thereby to tear the sheath progressively along a tear line running the length of the sheath, starting at the distal end of the sheath, to release the device from the confining effect of the sheath, progressively, beginning at the distal end of the device and wherein the sheath is of polyethylene-terephthalate, cold drawn along its long axis, and in that the distal end of the sheath tapers inwardly to provide an inwardly tapered distal end of the system.

The semiconductor memory device comprises a plurality of memory cells. Each memory cell comprises a respective transistor and a respective capacitor unit. The transistor comprises a transistor body of a first conductivity type, a drain area and a source area each having a second conductivity type, the drain area and source area are embedded in the transistor body on a first surface of the transistor body, and a gate structure having a gate dielectric layer and a gate electrode, the gate structure is arranged between the drain area and the source area. An isolation trench is arranged adjacent to said transistor body, having a dielectric layer and a conductive material, wherein the isolation trench is at least partially filled with the conductive material. The conductive material is isolated by said dielectric layer from the transistor body. The capacitor unit is formed by the transistor body representing a first electrode and the conductive material representing the second electrode.

A piezoelectric switch for tunable electronic components comprises piezoelectric layers, metal electrodes alternated with the layers and contact pads. Cross voltages are applied to the electrodes, in order to obtain an S-shaped deformation of the switch and allow contact between the contact pads. Additionally, a further electrode can be provided on a substrate where the switch is fabricated, to allow an additional electrostatic effect during movement of the piezoelectric layers to obtain contact between the contact pads. The overall dimensions of the switch are very small and the required actuation voltage is very low, when compared to existing switches.

A method for fabricating a gated semiconductor device, and the device resulting from performing the method. In a preferred embodiment, the method includes forming a hard mask for use in gate formation on one or more layers of alternately insulating and conducting material that have been formed on a substrate. The hard mask preferably includes three layers; a lower nitride layer, a middle oxide, and an upper nitride layer. In this embodiment, the middle oxide layer is formed with the rest of the hard mask, and then reduced in a lateral dimension, preferably using a DHF dip. A dielectric layer formed over the gate structure, including the hard mask, then etched back, self-aligns to be reduced-dimension oxide layer. In addition, where two conducting, that is gate layers are present, the lower layer is laterally reduced in dimension on at least one side to create an undercut.

A two-wheel gyroscope-stabilized vehicle includes a stabilizing gyroscope, having a gyroscope frame and a gyroscope rotor rotatably mounted in the frame. The gyroscope frame is free to rotate relative to the vehicle body. The vehicle further comprises a support structure that connects the vehicle body and the vehicle wheels, wherein the supporting structure is adapted to move the wheels independently in relation to each other and to move the wheels in relation to the body independently thereof. The support structure helps to keep the vehicle stable when riding on rough terrain. Balancing of the vehicle is provided by maintaining a right angle between the axis of rotation of the gyroscope rotor and direction of the vehicle movement by means of the control system through changing the difference of rotation velocities of the wheels. Steering of the vehicle is provided by means of applying the roll control force to the body.

An improved guiding member for use within a body lumen having a unique combination of superelastic characteristics. The superelastic alloy material has a composition consisting of about 30% to about 52% (atomic) titanium, and about 38% to 52% nickel and may have one or more elements selected from the group consisting of iron, cobalt, platinum, palladium, vanadium, copper, zirconium, hafnium and niobium. The alloy material is subjected to thermomechanical processing which includes a final cold working of about 10 to about 75% and then a heat treatment at a temperature between about 450° and about 600° C. and preferably about 475° to about 550° C. Before the heat treatment the cold worked alloy material is preferably subjected to mechanical straightening. The alloy material is preferably subjected to stresses equal to about 5 to about 50% of the room temperature ultimate yield stress of the material during the thermal treatment. The guiding member using such improved material exhibits a stress-induced austenite-to-martensite phase transformation at an exceptionally high constant yield strength of over 90 ksi for solid members and over 70 ksi for tubular members with a broad recoverable strain of at least about 4% during the phase transformation. An essentially whip free product is obtained.