456results about How to "Increase cell density" patented technology

A memory cell for magnetic random access memory devices based on a magnetic tunnel junction (MTJ) memory element with a perpendicular orientation of magnetization in pinned and free magnetic layers, and a tunnel barrier layer sandwiched between the pinned and free layers. The memory cell can include the MTJ memory element, a magnetic flux guide in series with selection devices, such as a bit line, a word line, and a transistor. The magnetic flux guide can have two electrically conductive magnetic portions with the MTJ memory element positioned between the magnetic portions. The MTJ memory element is magnetically isolated from the magnetic flux guide by thin non-magnetic conductive spacers. The MTJ memory element is arranged in a vertical space between the intersecting bit and word lines at their intersection region. The memory cell also includes write and excitation lines. The write line is parallel to the bit line and the excitation line is parallel to the word line. The write and excitation lines also intersect each other and define a corner. The MTJ memory element is positioned in the corner of the intercepting write and excitation lines.

The present invention relates to methods for the design and fabrication of biological constructs, such as organ simulants or organ replacements, which contain complex microfluidic architecture. Designs of the present invention provide increased space in the lateral dimension, enabling a large number of small channels for small vessels.

Ternary CAM cells are provided that have extremely small layout footprint size and efficient layout aspect ratios that enhance scalability. The cells also have high degrees of symmetry that facilitate high yield interconnections to bit, data and match lines. A 16T ternary CAM cell includes first and second pairs of access transistors that extend adjacent a first side of the cell, and first and second pairs of cross-coupled inverters that extend adjacent a second side of the cell. First and second halves of a 4T compare circuit are also provided. The first half of the 4T compare circuit is positioned so that is extends between the first pair of access transistors and the first pair of cross-coupled inverters. Similarly, the second half of the 4T compare circuit is positioned so that it extends between the second pair of access transistors and the second pair of cross-coupled inverters.

The present invention provides a method of increasing protein production in a cell culture by growing cells that produce the protein (e.g., the growth phase) in a perfusion cell culture to a high cell density (i.e., at least above about 40×106 cells / N mL) and then switching to a protein production phase, wherein the cells are cultured in a fed-batch cell culture. The present invention further provides a method for clarifying a protein from a cell culture by adjusting the pH of the cell culture to below neutral pH (i.e., below a pH of 7) and settling the cell culture, such that the cell culture separates to form a supernatant layer and a cell-bed layer, wherein the protein is in the supernatant layer.

Merging together the drift regions in a low-power trench MOSFET device via a dopant implant through the bottom of the trench permits use of a very small cell pitch, resulting in a very high channel density and a uniformly doped channel and a consequent significant reduction in the channel resistance. By properly choosing the implant dose and the annealing parameters of the drift region, the channel length of the device can be closely controlled, and the channel doping may be made highly uniform. In comparison with a conventional device, the threshold voltage is reduced, the channel resistance is lowered, and the drift region on-resistance is also lowered. Implementing the merged drift regions requires incorporation of a new edge termination design, so that the PN junction formed by the P epi-layer and the N<+> substrate can be terminated at the edge of the die.

Methods for treating surfaces of polymeric substrates (as used in medical implants) with inert plasmas to promote the growth of bioentities (such as cells) on these surfaces is disclosed. The treated surfaces are subsequently exposed to an environment to form functionalities associated with enhanced growth of the bioentity on the surface. For example, the substrate may be exposed to the ambient environment. The bioentity may then be deposited on the modified surface. This inert plasma treatment and exposure to a suitable environment does not degrade the implants, and thus improved implants are created. Also, due to the specific functional groups at the modified surface, high cell densities are achieved.

A semiconductor power device supported on a semiconductor substrate of a first conductivity type with a bottom layer functioning as a bottom electrode and an epitaxial layer overlying the bottom layer with a same conductivity type as the bottom layer. The semiconductor power device includes a plurality of FET cells and each cell further includes a body region of a second conductivity type extending from a top surface into the epitaxial layer. The body region encompasses a heavy body dopant region of second conductivity type. An insulated gate is disposed on the top surface of the epitaxial layer, overlapping a first portion of the body region. A barrier control layer is disposed on the top surface of the epitaxial layer next to the body region away from the insulated gate. A conductive layer overlies the top surface of the epitaxial layer covering a second portion of the body region and the heavy body dopant region extending over the barrier control layer forming a Schottky junction diode.

A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

The present invention provides an improved expression system for the production of recombinant polypeptides utilizing auxotrophic selectable markers. In addition, the present invention provides improved recombinant protein production in host cells through the improved regulation of expression.

A compact, high-yield, bio-reactor for use as small, medium and large-scale production unit for hosting and culturing of stem cells or living cells or micro organism and producing by multiplication or expression one or more biologic compounds for medical and biological applications.

The present invention relates to a catalyst (1) for combustion of at least a portion of a gaseous fuel-oxidant mixture flowing through the catalyst (1), in particular for a burner of a power plant. An inlet sector (5) comprises inlet channels (9). A succeeding sector (6) comprises succeeding channels (10). The succeeding channels (10) have smaller internal cross-sectional areas than the inlet channels (9). To improve the production of the catalyst (1), the invention proposes channels (3) which extend through the inlet sector (5) and through the succeeding sector (6) and have the internal cross-sectional area of the inlet channels (9). The inlet channels (9) are formed by portions of the channels (3) lying in the inlet sector (5). The succeeding channels (10) are provided by arranging separation walls (11) within portions of the channels (3) lying in the succeeding sector (6), the separation walls (11) dividing each of the respective channel portions in the succeeding sector (6) into two succeeding channels (10).

The present invention relates to methods for the design and fabrication of biological constructs, such as organ simulants or organ replacements, which contain complex microfluidic architecture. Designs of the present invention provide increased space in the lateral dimension, enabling a large number of small channels for small vessels.