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864results about How to "Good temperature characteristics" patented technology

Light emitting devices with layered III-V semiconductor structures

A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against either the semiconductor substrate or cladding layer and, alternately, the thickness of the quantum well layer is in excess of the critical thickness calculated after Matthews and Blakeslee.
Owner:RICOH KK

Light emitting device

An object of the present invention is to provide a light emitting device which satisfies both properties of excellent color rendering properties for color reproduction and good light emitting efficacy, both of which are in the mutual trade-off relationship, by using a blue semiconductor laser which emits blue wavelength light with good light emitting efficiency and which has a linear spectrum in the blue wavelength band. A light emitting device is comprised of at least a first unit and at least a second unit. The first unit is comprised of a first excitation light source comprising a laser element emitting blue wavelength band excitation light, a wavelength converting member comprising at least one type of fluorescent material and which absorbs at least a portion of an excitation light emitted from the first excitation light source, converts the wavelength, and releases light with a wavelength longer than the first excitation light, and a light guide which has a refractive index in the center region of the cross-section which is higher than the refractive index of the surrounding region and which transmits the excitation light emitted from the first excitation light source. The second unit is comprised of a second excitation light source comprising a laser element which emits excitation light with a wavelength band shorter than the blue wavelength band excitation light emitted by the laser element, a wavelength converting member, and a light guide.
Owner:NICHIA CORP

Dielectric ceramic and multilayer ceramic capacitor

A dielectric ceramic includes a compound represented by the general formula: (Ba1-tCat)m(Ti1-u-xZruCux)O3 (where 0.96≦m≦1.02, 0.001≦x≦0.03, 0≦t≦0.1, and 0≦u≦0.06) as a primary component, a rare earth element Re such as Dy, a metal element M such as Mn, Mg, and Si. In the dielectric ceramic, the Cu is uniformly and dispersedly present in the primary phase grain forming the primary component, and the contents of the accessory components with respect to 100 molar parts of the primary component are 0.1 to 1.5 molar parts of Re, 0.1 to 0.6 molar parts of M, 0.1 to 1.5 molar parts of Mg and 0.1 to 2.0 molar parts of Si. Accordingly, a multilayer ceramic capacitor can be realized which has a high dielectric constant, superior temperature properties, and a high reliability, and also has a small change in electrostatic capacitance with time.
Owner:MURATA MFG CO LTD

Phosphor, production method of phosphor, phosphor-containing composition, and light emitting device

InactiveUS20110182072A1High luminance characteristicImproved temperature characteristicDischarge tube luminescnet screensLamp detailsHalogenLight source
To provide an alkaline-earth metal halogen phosphor that has high luminescent characteristics even when used with an excitation light source that emits light of the near-ultraviolet region, a phosphor-containing composition and a light emitting device using the phosphor, and a display and an illuminating device using the light emitting device,the phosphor of the present invention has a chemical composition represented by the formula (1) below and an external quantum efficiency, when excited with light of 400-nm wavelength, of 77% or higher.(Sr10-x-y-zMxEuyMnz)(PO4)6(Cl1-aQa)2  (1)(In the above formula (1), “M” represents at least one kind of element selected from the group consisting of Ba, Ca, Mg, and Zn, “Q” represents at least one kind of element selected from the group consisting of F, Br, and I, and each of “x”, “y”, “z”, and “a” represents a number satisfying the following requirements: 0≦x<10, 0.3≦y≦1.5, 0≦z≦3, 0≦a≦1, and x+y+z≦10.)
Owner:MITSUBISHI CHEM CORP

Asymmetric truck racing tire

An improved truck racing tire includes three belts and reduced tread and undertread thickness for weight reduction. An asymmetric shoulder design is provided and circumferential grooves having wear indicia therein at a preselected depth are incorporated into the tread to divide the tread into plural ribs. Notches are formed within the tread ribs in circumferential patterns of distribution at a depth equivalent to the depth of groove tread wear indicators. The tread is constructed of a relatively softer compound in the cap and a relatively harder compound in the base. The boundary between the cap and the base is at a depth corresponding to the notch depth and the wear indicators within the grooves to provide a further indication and confirmation of wear pattern and magnitude.
Owner:THE GOODYEAR TIRE & RUBBER CO

Compositions for thin-film capacitive device, high-dielectric constant insulating film, thin-film capacitance device, and thin-film multilayer ceramic capacitor

A thin-film capacitor (2) in which a lower electrode (6), a dielectric thin-film (8), and an upper electrode (10) are formed in order on a substrate (4). The dielectric thin-film (8) is made of a composition for thin-film capacitance devices. The composition includes a bismuth layer-structured compound whose c-axis is oriented vertically to the substrate and which is expressed by a formula: (Bi2O2)<2+>(Am-1BmO3m+1)<2->, or Bi2Am-1BmO3m+3 wherein "m" is an even number, "A" is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and "B" is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta Sb, V, Mo and W. The temperature characteristics of the dielectric constant are excellent. Even if the dielectric thin-film is made more thinner, the dielectric constant is relatively high, and the loss is small. The leak characteristics are excellent, the break-down voltage is improved and the surface smoothness is excellent.
Owner:TDK CORPARATION

Broad temperature low standby power consumption FPT type soft magnetic ferrite and preparation method thereof

The invention discloses a broad temperature low standby power consumption FPT type soft magnetic ferrite and a preparation method thereof. The composition calculated by content of oxides is as follows: 52-55mol% of Fe2O3, 7-10mol% of ZnO and the balance of MnO; a first auxiliary component comprises 0.01wt%-0.1wt% of CaO and 0.005wt%-0.02wt% of SiO2; a second auxiliary component comprises one or more of V2O5, Nb2O5, Ta2O5, ZrO2 and K2O, the content is 0-0.2wt% by calculation, and a third auxiliary component comprises 0.05-1wt% of TiO2 and 0.05-1wt% of Co2O3. Pre-burning under the protection of nitrogen, sintering, the control of cooling atmosphere and the densification process are carried out, thereby leading the power consumption PCV of a magnetic core at 100kHz and 200mT within the temperature of 25 DEG C-120 DEG C to be respectively less than 400kw / m<3> and 350kw / m<3>, and a time stability indicator thereof which is a disaccommodation factor Df is less than 2*10<-6>.
Owner:NANJING FINEMAG TECH

Multimodal satellite navigation terminal antennae with wide-band circular polarized wide wave beam

The invention discloses a multimode satellite navigation terminal antenna with broadband and circular polarization wide-beam, which is applied in places with higher demands on the properties of the broadband and the circular polarization. The multimode satellite navigation terminal antenna is composed of an antenna body and a feed network, wherein, the antenna body consists of a radome (1), a media support, a metallic radiating patch (2), four L-shaped metallic feed probes (3) and a metallic reflecting plate (4); the feed network consists of a four-way microstrip power-dividing phase shift network (5) and a metallic shielding box; the four L-shaped metallic feed probes (3) of the antenna body are electrically connected with the microstrip power-dividing phase shift network (5) of the feed network by metals. The multimode satellite navigation terminal antenna with broadband and circular polarization wide-beam leads the relative bandwidth of the microstrip antenna to reach a point above 40 percent. Meanwhile, since the microstrip antenna with nested media is adopted, the low-elevation gain of the microstrip antenna is greatly improved. With a 5-degree elevation angle gain larger than -5dBi, the multimode satellite navigation terminal antenna with broadband and circular polarization wide-beam is also provided with excellent mechanical characteristics and temperature characteristics.
Owner:SPACE STAR TECH CO LTD

Fe-Si-Al magnetic core preparation method and inorganic composite insulation coating material for magnetic core

The invention discloses a Fe-Si-Al magnetic core preparation method and an inorganic composite insulation coating material for a magnetic core, belonging to the field of Fe-Si-Al magnetic material and used for solving the high eddy-current loss problem of existing magnetic cores and such problems caused by the fact that the existing magnetic cores usually use organic coating materials as stress is difficult to eliminate in a forming process, the insulation property of the material is poor, and the volatilization quantity of organics is large in heating processes such as heat treatment. The Fe-Si-Al magnetic core preparation method disclosed by the invention comprises the following steps: cast ingot smelting, powder making, surface phosphorization, insulation coating, compression moulding, annealing treatment and surface coating; the prepared Fe-Si-Al magnetic core has the advantages of low eddy-current loss, small magnetic conductivity temperature coefficient, good temperature stability, high direct current superposition characteristic, high saturation flux density and good high-frequency characteristic and meets the requirements for high frequency, small size, high power and electromagnetic interference resistance of electronic devices.
Owner:临沂银凤新材料技术服务有限公司
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