The invention discloses a trench gate charge storage type insulated gate bipolar transistor and a manufacturing method therefor, and belongs to the technical field of a semiconductor power device. Byovercoming the adverse influence of an N type charge storage layer in the conventional structure, more excellent voltage withstand performance is obtained; and compared with the conventional mode, thecompromising characteristic among the switching performance, switch-on voltage drop and switching loss of the device is realized by increasing the trench gate depth and reducing cellular width, and the problem of reliability degradation is solved. By introducing a series diode structure into a P type body region, the channel voltage of an MOSFET is clamped at a quite small value, thereby loweringdevice saturated current density and improving the short-circuit safety working region of the device; by introducing a split electrode and a split electrode dielectric layer to the trench gate structure, the threshold voltage and switching speed of the device are ensured while the switching performance of the device is improved; and by virtue of the floating P type body region, the compromising characteristic between the forward switch-on voltage drop and switching loss of the device is improved. In addition, the manufacturing process of the CSTBT device is compatible with the conventional manufacturing process.