he invention relates to a novel SINP
silicone blue-violet battery and a preparation method thereof. The invention uses shallow junctions formed from thermally diffused
phosphorus, an ultra-thin SiO2 layer formed by low-temperature thermal oxidization and an ITO dereflection / collection
electrode film formed by RF magnetron
sputtering to prepares a novel ITO / SiO2 / np blue-violet reinforced SINP
silicone photo-battery. Preparation method of the invention is to take a
silicon single crystal flake which is P type, and has crystallographic orientation of 100,
electric resistivity of 2 2
omega.cm and thickness of 220mu m, as a substrate. The substrate is cleaned and is etched by routine
chemistry, and then is thermally diffused by POC3 liquid source to form n regions (the invention prepares two pieces of novel SINP photo-batteries, one being routine SINP photo-battery having emitting region square resistance of 10
Omega / square and
junction depth of 1 Mu m, and the other one being SINP
silicone blue-violet battery having emitting region square resistance of 37
Omega / square and
junction depth of 0.4 Mu m). Removing the phosphorosilicate glass (HF:H2O=1:10) at front face;
steaming Al at back of the
silicon chip; thermally oxidizing the
silicon chip at 400 to 500 DEG C and condition of V2:O2=4:1 for 15 to 30min to generate a layer of 15 to 20 ultra-thin SiO2 layer, and at the same time alloying the Al at the back. Then RF magnetron
sputtering the ITO dereflection / collection
electrode film (ITO film is also deposited on the glass to study electrooptical characteristic thereof) having
high transmittance and
high conductivity, and
sputtering a Cu gate
electrode by
metal mask direct-current magnetron. Finally,
cutting the outer edge part of the battery by
a diamond excircle downward
cutting / a dicing saw so as to prevent
short circuit of the edge of the photo-battery.