Hetero-junction-structured crystalline silicon solar cell with intrinsic layer and preparation method thereof

Abstract

The invention discloses a hetero-junction-structured crystalline silicon solar cell with an intrinsic layer and a preparation method thereof. The crystalline silicon solar cell comprises a crystalline silicon substrate, and upper and lower amorphous alumina passivation dielectric layers; a p-type doped amorphous silicon carbon film and a TCO (Transparent Conductive Oxide) layer are arranged on the amorphous alumina passivation dielectric layer on the upper surface; an n-type doped amorphous silicon or micro-crystalline silicon film and a TCO layer are arranged below the amorphous alumina passivation dielectric layer on the lower surface; and the TCO layers on the upper and lower surfaces are both connected with a metal gate electrode. The preparation method comprises the steps of preparing the amorphous alumina passivation dielectric layers: preparing the ultra-thin amorphous alumina passivation dielectric layers simultaneously after the crystalline silicon substrate is acidized; and then preparing the p-type amorphous silicon carbon and the n-type amorphous silicon or micro-crystalline silicon and the TCO respectively to form the hetero-junction cell. The hetero-junction-structured crystalline silicon solar cell and the preparation method thereof have the advantages of simple process, good surface passivation performance of the crystalline silicon, good UV (ultraviolet) radiation-resistant performance, fully utilization of the sunlight and the like.

Description

technical field [0001] The invention relates to a crystalline silicon solar cell, in particular to a solar cell with a heterojunction (HIT) structure with an intrinsic layer on the surface of an amorphous aluminum oxide passivated silicon and a preparation method thereof. Background technique [0002] At present, the HIT structure crystalline silicon solar cell uses amorphous silicon as the intrinsic layer to passivate the silicon surface. However, amorphous silicon has a strong absorption of short-wavelength light, and the passivation performance of silicon is not stable under UV. The present invention adopts the amorphous aluminum oxide prepared by the atomic layer deposition (ALD) system as the intrinsic layer, which can well solve these two problems. Amorphous silicon alumina has a band gap of about 6.8eV, is completely transparent to sunlight, has good passivation performance on the silicon surface, and is not affected by UV radiation, making the battery performance mor...

AI Technical Summary

Problems solved by technology

[0002] At present, the HIT structure crystalline silicon solar cells use amorphous silicon as the intrinsic layer to passivate the silicon surface. However, amorphous silicon has a strong absorption of short-wavelength light, and the passivation performance of silicon is not stable under UV.

Images