The invention discloses a preparation method of an N type
heterojunction two-sided
solar battery. The preparation method comprises the following steps of S1, providing an
N type silicon wafer substrate; S2, performing two-sided texturing on the
N type silicon wafer substrate; S3, forming an n+ lightly doped layer on the front surface of the
N type silicon wafer substrate; S4, performing corrosionand cleaning on the back surface of the N type
silicon wafer substrate; S5, forming a front surface intrinsic
amorphous silicon layer and an N type doped
amorphous silicon layer on the n+ lightly doped layer on the front surface of the N type
silicon wafer substrate through a process step in sequence; S6, forming a back surface intrinsic
amorphous silicon layer and a P type doped amorphous siliconlayer on the back surface of the N type
silicon wafer substrate through a process step in sequence; S7, forming TCO thin films on the front surface and the back surface of the N type silicon wafer substrate; and S8, forming a positive
electrode on the back surface of the N type silicon wafer substrate, and forming a negative
electrode on the front surface thereof. By adoption of the method, a
high surface passivation effect can be obtained, the problem that utilization of a window layer of a
solar battery front surface is suppressed in the prior art can be solved, and the conversion efficiency of the battery can be improved.