64 results about "Indium bump" patented technology

A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (<100 mV for both bands) and exhibits a dark current density in the longer wavelength band comparable to that obtained with single-color detectors.

A device comprising a pixilated semiconductor detector or VLSI chip having plurality of individual indium bumps arrayed on a surface of the detector, wherein the indium bumps are in electrical contact with the surface and are situated in defined locations on the surface is provided. Additionally, a hybrid detector comprising a pixilated detector in electrical contact with a VLSI chip, wherein electrical contacts formed from indium metal are made between the pixels of the semiconductor and regions on the VLSI chip corresponding thereto is provided. In another embodiment, a method of forming electrical contacts on a pixilated detector comprising the steps of constraining a shadow mask having an array of holes in predetermined locations above a surface on the detector, aligning the mask above the detector, and evaporating indium metal under vacuum through holes in the mask onto the surface of the detector to form the contacts is described.

The invention relates to a backlight ZnO-based ultraviolet imaging solid focal plane surveying array and preparation, which on the sapphire (0001)substrate of double-face polishing, uses laser molecular beam to epitaxially grow a MgxZn1-xO(BexZn1-xO) nesa heavily doped with Al, then epitaxially growing a MgyZn1-yO layer without adulterant, sensitive to ultraviolet light. Then a MgzZn1-zO ohm contact epitaxial layer heavily doped with Al is gengerated on the upper surface. An array pixel cell structure is formed by using a photoetching and ICP ion etching method, then uses RF magnetron sputtering to plate a SiO2 passivation layer, based on the etched graph. An Al contact of electrodes etched by reactive ion uses a method of evaporation plated film to form a metallic contact, for rapid annealing activation of an ultraviolet sensitive active layer to form an ohm contact, thus getting a backlight ZnO-based ultraviolet imaging solid focal plane surveying array. The invention and the matched Si-CMOS readout circuit chip are interconnected through indium bumps, which are put on the focal plane of the ultraviolet lens, added with the corresponding image processing, memory circuit and software to form a complete ultraviolet imaging device.

The invention discloses an AlGaN / PZT ultraviolet / infrared dual-band detector, which uses the dual-band absorption characteristics of the composite detection material AlGaN / PZT to simultaneously realize the detection of ultraviolet light and infrared light. The incident beam first passes through the AlGaN PIN structure, and the ultraviolet light with higher energy is absorbed and converted into ultraviolet photocurrent; the infrared light with lower energy passes through the sapphire substrate and is absorbed by the PZT ferroelectric film, and the formed photocurrent passes through the indium column. soldered out. The dual-band detector of the present invention makes full use of the detection advantages of different materials and realizes the simultaneous detection of two bands; meanwhile, the detector works at room temperature and is easy to use.

A two-color linear column infrared focal plane detector readout circuit structure, including a band-one input stage, a band-two input stage, a shift register and an external lead key pressure point working together with the two input stages, and its characteristic is that it consists of two A series of switching tubes, photosensitive elements, gate control tubes, integral capacitors, reset switches and source limit followers are connected to form, and the photosensitive element array and each input end of the readout circuit are electrically connected through the interconnection of indium columns. The circuit structure of the present invention is compact, the working points of the photosensitive element array of the two bands, and the corresponding integral capacitors can be set independently, and the response signals of the two bands are output respectively, and the readout circuit made with this structure has a modular form, which can Realize the seamless splicing of multiple modules to form a two-color long-line infrared focal plane detector.